UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET 1 TO-252 DESCRIPTION The UTC 30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. 1 FEATURES * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability TO-220 1 1 SYMBOL TO-220F TO-220F2 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 30N06L-TA3-T 30N06G-TA3-T TO-220 30N06L-TF2-T 30N06G-TF2-T TO-220F2 30N06L-TF3-T 30N06G-TF3-T TO-220F 30N06L-TN3-T 30N06G-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel 1 of 8 QW-R502-087.E 30N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate to Source Voltage RATINGS UNIT 60 V ±20 V TC = 25℃ 30 A Continuous Drain Current ID TC = 100℃ 21.3 A Pulsed Drain Current (Note 2) IDM 120 A 300 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 8 mJ TO-220 79 Power Dissipation TO-220F/ TO-220F2 PD 45 W TO-252 44 Junction Temperature TJ +150 ℃ Operation Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25℃ SYMBOL VDSS VGSS THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-220F/TO-220F2 TO-252 TO-220 Junction to Case TO-220F/TO-220F2 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62 62.5 110 1.9 2.7 2.85 UNIT °C/W °C/W 2 of 8 QW-R502-087.E 30N06 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 μA 100 nA Forward VGS = 20V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25℃ 0.06 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 32 40 mΩ DYNAMIC CHARACTERISTICS 800 pF Input Capacitance CISS VGS = 0 V, VDS = 25 V, Output Capacitance COSS 300 pF f = 1MHz Reverse Transfer Capacitance CRSS 80 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 12 ns Turn-On Rise Time tR 79 ns VDD = 30V, ID =15 A, VGS=10V (Note 1, 2) Turn-Off Delay Time tD(OFF) 50 ns Turn-Off Fall Time tF 52 ns Total Gate Charge QG 20 30 nC VDS = 60V, VGS = 10 V, Gate-Source Charge QGS 6 nC ID = 24A (Note 1, 2) Gate-Drain Charge QGD 9 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A 1.4 V Maximum Continuous Drain-Source Diode IS 30 A Forward Current Maximum Pulsed Drain-Source Diode ISM 120 A Forward Current Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-087.E 30N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-087.E 30N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 1mA VG Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-087.E 30N06 TYPICAL CHARACTERISTICS Transfer Characteristics On-State Characteristics VGS Top: 15V 10V 8V 7V 102 6V 5.5V 5V Bottorm: 4.5V 102 4.5V 101 101 Note: 1. VDS=25V 2. 20µs Pulse Test 100 10-1 101 100 Drain-Source Voltage, VDS (V) 100 2 4 5 6 7 8 9 10 3 Gate-Source Voltage, VGS (V) Reverse Drain Current vs. Allowable Case Temperature On-Resistance Variation vs. Drain Current and Gate Voltage 100 102 80 60 150℃ VGS=10V 101 40 VGS=20V 0.0 0 20 40 60 80 25℃ *Note: 1. VGS=0V 2. 250µs Test 20 100 120 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) Gate-to-Source Voltage, VGS (V) Drain Current, ID (A) Capacitance (pF) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-087.E 30N06 Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Power MOSFET Maximum Safe Operating 30 100 Operation in This Area by RDS (ON) 100µs 10 10ms Note: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 0.1 1 20 1ms DC 1 Maximum Drain Current vs. Case Temperature 10 100 1000 Drain-Source Voltage, VDS (V) 10 0 25 50 75 100 125 150 Case Temperature, TC (℃) Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse Note: 1. ZθJC (t) = 0.88℃/W Max. 2. Duty Factor, D=t1/t2 3. TJ -TC=PDM×ZθJC (t) 10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-087.E 30N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-087.E