UNISONIC TECHNOLOGIES CO., LTD 6N90 Preliminary Power MOSFET 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N90 is generally applied in high efficiency switch mode power supplies. 1 TO-220F 1 TO-220F1 FEATURES * 6.2A, 900V, RDS(on) = 2.3Ω @VGS = 10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Halogen Free SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N90L-TA3-T 6N90G-TA3-T 6N90L-TF3-T 6N90G-TF3-T 6N90L-TF1-T 6N90G-TF1-T Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-220F1 S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tube Tube 1 of 6 QW-R502-492.a 6N90 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 900 Gate-Source Voltage VGSS ±30 Continuous (TC=25°C) ID 6.2 Drain Current Pulsed (Note 1) IDM 24 Single Pulsed (Note 2) EAS 650 Avalanche Energy Repetitive (Note 1) EAR 16.7 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 TO-220 167 Power Dissipation PD TO-220F/TO220F1 56 Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. * Drain current limited by maximum junction temperature. UNIT V V A A mJ mJ V/ns W W °C °C THERMAL CHARACTERISTICS PARAMETER TO-220 Junction to Ambient TO-220F/TO220F1 TO-220 Junction to Case TO-220F/TO220F1 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 62.5 0.75 2.25 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-492.a 6N90 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS ID=250µA, VGS=0V 900 IGSS UNISONIC TECHNOLOGIES CO., LTD V 1.07 VDS=900V, VGS=0V VDS=720V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.1A Forward Transconductance gFS VDS=50V, ID=3.1A (Note 4) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=720V, ID=6.2A Gate to Source Charge QGS (Note 4, 5) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=450V, ID=6.2A, RG=25Ω Rise Time tR (Note 4, 5) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=6.2A, VGS=0V IS=6.2A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Time tRR (Note 4) Body Diode Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature www.unisonic.com.tw MIN TYP MAX UNIT △BVDSS/△TJ Reference to 25°C, ID=250µA IDSS Forward Reverse TEST CONDITIONS V/°C 10 µA 100 +100 nA -100 nA 3.0 1.93 5.5 5.0 2.3 1360 1770 110 145 11 15 30 9.0 12 35 90 55 60 40 80 190 120 130 6.0 24 1.4 630 6.9 V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns µC 3 of 6 QW-R502-492.a 6N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 4 of 6 QW-R502-492.a 6N90 Preliminary Power MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-492.a 6N90 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-492.a