UNISONIC TECHNOLOGIES CO., LTD BU931 NPN SILICON TRANSISTOR NPN POWER DARLINGTON FEATURES * High operating junction temperature * High voltage ignition coil driver * Very rugged bipolar technology INTERNAL SCHEMATIC DIAGRAM 1 TO-3P ORDERING INFORMATION Ordering Number Lead Free Halogen Free BU931L-T3P-T BU931G-T3P-T www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO-3P Pin Assignment 1 2 3 B C E Packing Tube 1 of 5 QW-R214-012,D BU931 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage (VBE=0) VCES 500 V Collector-Emitter Voltage (IB=0) VCEO 400 V Emitter-Base Voltage (IC=0) VEBO 5 V Collector Current IC 15 A Collector Peak Current ICM 30 A Base Current IB 1 A Base Peak Current IBM 5 A Power Dissipation (TC=25°C) PD 175 W Junction Temperature TJ +200 °C Storage Temperature TSTG -65 ~ +200 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Case SYMBOL θJC RATING 1.1 UNIT °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Collector Cut-off Current (IB=0) ICEO Emitter Cut-off Current (IC=0) IEBO Collector-Emitter Saturation Voltage (Note) Base-Emitter Saturation Voltage (Note) DC Current Gain Diode Forward Voltage VCE(SAT) VBE(SAT) hFE VF Functional Test Inductive Load Storage Time / Fall Time tS tF TEST CONDITIONS VCE = 450 V VCE =450V, TJ =125°C VEB = 5V IC = 7A, IB =70mA IC = 8A, IB =100mA IC = 10A, IB =250mA IC = 7A, IB =70mA IC = 8A, IB =100mA IC = 10A, IB =250mA IC = 5A, VCE =10V IF = 10 A VCC =24V, Vclamp =400V L=7mH VCC = 12V, Vclamp =300V L=7mH IC =7A, IB =70mA VBE =0, RBE =47Ω MIN TYP MAX UNIT 100 μA 0.5 mA 20 mA 1.6 V 1.8 V 1.8 2.2 2.4 2.5 V V V V 2.5 V 300 8 A 15 0.5 μs μs Note: Pulsed: Pulse duration = 300μs, duty cycle 1.5 % UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R214-012,D BU931 NPN SILICON TRANSISTOR TEST CIRCUITS 24V VD 12V L=7mH VZ Driver and current limiting circuit 7mH T.U.T 0.22µF 100Ω VIN T.U.T 47Ω Vclamp 0.2Ω Functional Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Switching Time Test Circuit 3 of 5 QW-R214-012,D BU931 Collector-Emitter Saturation Voltage, VCE(SAT)(V) Collector Emitter Saturation Voltage vs. Collector Current hFE=50 3 125°C 2 25°C -40°C 1 0 1 2 4 Collector-Emitter Saturation Voltage, VCE(SAT)(V) TYPICAL CHARACTERISTICS 6 Collector Emitter Saturation Voltage vs. Collector Current hFE=100 3 125°C 2 25°C -40°C 1 0 1 Base-Emitter Saturation Voltage, VBE(SAT)(V) Base-Emitter Saturation Voltage, VBE(SAT)(V) 125°C 25°C -40°C 2 1 0 1 2 4 4 6 Base Emitter Saturation Voltage vs. Collector Current Base Emitter Saturation Voltage vs. Collector Current hFE=50 3 2 Collector Current, IC (A) Collector Current, IC (A) hFE=100 3 125°C 25°C -40°C 2 1 0 6 Collector Current, IC (A) 1 2 4 6 Collector Current, IC (A) DC Current Gain vs. Collector Current 8 6 VCE=2V 4 DC Current Gain, hFE NPN SILICON TRANSISTOR 2 25°C 102 8 6 4 2 10 10-1 2 4 6 8 2 1 Collector Current, IC (A) 4 6 8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R214-012,D BU931 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R214-012,D