UNISONIC TECHNOLOGIES CO., LTD TUL1203 Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The TUL1203 is manufactured by using high voltage Planar technology for high voltage capability and high switching speeds. FEATURES * BVCES Up To 1400V. * Better Distribution Of Dynamic Parameters And Lot To Lot Spread * High Switching Speed ORDERING INFORMATION Ordering Number Lead Free Plating Halogen-Free TUL1203L-TA3-T TUL1203G-TA3-T www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-220 1 B Pin Assignment 2 3 C E Packing Tube 1 of 4 QW-R203-038.Da TUL1203 Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE = 0) VCBO 1400 V Collector-Emitter Voltage (VBE = 0) VCES 1400 V Collector-Emitter Voltage (IB = 0) VCEO 550 V Emitter-Base Voltage (IC = 0) VEBO 12 V Collector Current IC 5 A Collector Peak Current (tp <5 ms) ICM 8 A Base Current IB 2 A Base Peak Current (tp <5 ms) IBM 4 A Power Dissipation (TC = 25°С) PD 100 W Junction Temperature TJ +150 °С Storage Temperature TSTG -65 ~ +150 °С Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently. Absolute maximum ratings are only stress ratings and it is not implied for functional device operation. THERMAL DATA PARAMETER SYMBOL θJC Junction to Case RATINGS 1.25 UNIT °С /W ELECTRICAL CHARACTERISTICS (Tc = 25°С unless otherwise specified) PARAMETER Collector Cut-off Current (VBE = 0) Emitter Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage (IB = 0) (Note) SYMBOL TEST CONDITIONS ICES VCE = 1400 V IEBO VEB = 12 V MIN VCEO(SUS) IC = 100 mA 550 Collector-Emitter Saturation Voltage (Note) VCE(SAT) Base-Emitter Saturation Voltage (Note) VBE(SAT) DC Current Gain (Note) Resistive Load hFE Storage Time tS Fall Time tF Avalanche Energy EAR IC = 1 A, IB = 200 mA IC = 2 A, IB = 400 mA IC = 3 A, IB = 1 A IC = 2 A, IB = 400 mA IC = 3 A, IB = 1 A IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V IC = 0.8 mA, VCE = 3 V IC = 2 A, VCE = 5 V IC = 2 A, VCC = 150 V IB1= 0.4 A, IB2= -0.8 A TP= 30 µs L = 2 mH, C = 1.8 nF IBR ≤ 2.5A, 25°С < TC <125°С TYP V 0.5 0.7 1.5 1.5 1.5 V V V V V 2.5 32 28 3.0 µs 0.2 0.3 µs 10 10 14 9 6 MAX UNIT 100 µA 100 µA mJ Note: Pulse Test: Pulse width = 300μs, Duty cycle≤1.5% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-038.Da TUL1203 Preliminary NPN SILICON TRANSISTOR TEST CIRCUITS VCC C L=2mH IBR T1 Rg T.U.T 5V VIN TP Energy Rating Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-038.Da TUL1203 Preliminary NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-038.Da