UNISONIC TECHNOLOGIES CO., LTD UP1856 PNP SILICON TRANSISTOR HIGH CURRENT TRANSISTOR FEATURES * High current switching * Low VCE(SAT) * High hFE 1 SOT-223 *Pb-free plating product number: UP1856L ORDERING INFORMATION Order Number Normal Lead Free Plating UP1856-AA3-R UP1856L-AA3-R UP1856L-AA3-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AA3: SOT-223 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-014,B UP1856 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -5 A Continuous Collector Current IC -2 A Power Dissipation at Ta=25°C PD 1 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL BVCEO BVCBO BVEBO Collector-Emitter Saturation Voltage(Note) VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Collector Cut-Off Current Emitter Cut-Off Current VBE(SAT) VBE(ON) ICBO IEBO hFE1 hFE2 hFE3 hFE4 DC Current Gain (Note) Transition Frequency fT Output Capacitance Cob Turn-on Time tON Turn-off Time tOFF Note: Pulsed test: duty cycle ≤ 2%, tP =300µsec. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IC= -10mA, IB=0 (Note) IC= -0.1mA, IE=0 IE= -0.1mA, IC=0 IC= -100mA, IB= -10mA IC= -1A, IB= -100mA IC= -2A, IB=-400mA IC=-2A, IB=-400mA IC=-2A, VCE=-5V (Note) VCB=-200V, IE=0 VEB=-6V, IC=0 IC=-10mA, VCE=-5V IC=-1A, VCE=-5V IC=-2A, VCE=-5V IC=-5A, VCE=-5V IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V MIN -200 -220 -6 TYP -240 -300 -8 -30 -120 -168 -970 -810 100 100 50 200 200 150 10 MAX UNIT V V V -50 mV -165 mV -275 mV -1110 mV -950 mV -50 nA -10 nA 300 110 MHz 32 67 1140 pF ns ns 2 of 3 QW-R207-014,B UP1856 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS 1.6 IC/I B=10 1.2 -55℃ +25℃ +150℃ 0.8 0.4 0 0.00 1 0.01 0.1 1 10 20 Base-Emitter Saturation vs. Collector Current Base-Emitter Saturation, VBE(SAT) (V) Collector-Emitter Saturation Voltage, VCE(SAT) (V) Collector-Emitter Saturation Voltagevs. Collector Current 1.6 IC/I B=10 -55℃ +25℃ 1.2 +100℃ 0.8 0.4 0 0.001 +100℃ DC Current Gain, hFE +25℃ -55℃ 100 VCE=1V 0.001 0.01 0.1 1 10 20 Collector Current , IC (A) Base-Emitter Turn-on Voltage, V BE(ON) (V) DC Current Gain vs. Collector Current 200 0.1 1 10 20 Collector Current , IC (A) Collector Current, IC (A) 300 0.01 Base-Emitter Turn-on Voltage vs Collector Current 1.6 VCE=1V -55℃ +25℃ +100℃ 1.2 0.8 0.4 0 0.001 0.01 0.1 1 10 20 Collector Current, IC (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R207-014,B