UNISONIC TECHNOLOGIES CO., LTD UP1855 PNP SILICON TRANSISTOR HIGH CURRENT TRANSISTOR FEATURES * High current switching * Low VCE(SAT) * High hFE ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP1855L-x-AA3-R UP1855G-x-AA3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel 1 of 4 QW-R207-011.G UP1855 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -4 A Power Dissipation (Ta = 25°C ) (Note 2) PD 3 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC = -100µA Collector-Emitter Breakdown Voltage BVCEO IC = -10mA Emitter-Base Breakdown Voltage BVEBO IE = -100µA (Note) VCB=-150V Collector Cut-off Current ICBO VCB=-150V, Ta=100°C Emitter Cut-off Current IEBO VEB=-6V IC=-100mA, IB=-5mA (Note) IC=-500mA, IB=-50mA (Note) Collector-Emitter Saturation Voltage VCE (SAT) IC=-1A, IB=-100mA (Note) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage DC Current Gain Transition Frequency Output Capacitance VBE (SAT) VBE (ON) hFE1 hFE2 hFE3 hFE4 fT Cob tON Switching Times tOFF Note: Pulse test: tP ≤300µs, Duty cycle ≤2% MIN -180 -140 -6 TYP -210 -170 -8 MAX -30 -70 -50 -1 -10 -60 -120 UNIT V V V nA µA nA mV mV -110 -150 mV IC=-3A, IB=-300mA (Note) -275 -550 mV IC=-3A, IB=-300mA (Note) VCE=-5V , IC=-3A (Note) VCE=-5V , IC=-10mA (Note) VCE=-5V , IC=-1A (Note) VCE=-5V , IC=-3A (Note) VCE=-5V , IC=-10A (Note) VCE=-10V , IC=-100mA, f=50MHz VCB=-20V, f=1MHz VCC=-50V, IC=-1A IB1=-100mA, IB2=100mA -970 -830 200 -1110 -950 mV mV 100 100 28 300 140 10 110 40 68 1030 MHz pF ns ns CLASSIFICATION OF hFE3 RANK RANGE A 28~75 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 75(MIN.) 2 of 4 QW-R207-011.G UP1855 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R207-011.G UP1855 PNP SILICON TRANSISTOR UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R207-011.G