UNISONIC TECHNOLOGIES CO., LTD UT30N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE FEATURES * RDS(ON) = 30mΩ @VGS = 10 V * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain *Pb-free plating product number: UT30N03L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT30N03L-TN3-R UT30N03G-TN3-R UT30N03L-TN3-T UT30N03G-TN3-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 4 QW-R502-140.B UT30N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 30 A Pulsed Drain Current IDM 40 A Avalanche Energy EAS 90 mJ Power Dissipation PD 50 W ℃ Junction Temperature TJ +175 ℃ Storage Temperature TSTG -55 ~ +175 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP MAX 50 3.0 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA Drain-Source Leakage Current IDSS VDS = 30 V, VGS = 0 V Gate-Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA Static Drain-Source On-State Resistance VGS = 10 V, ID = 15 A RDS(ON) (Note2) VGS = 4.5 V, ID = 12.5 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 15V, ID ≒ 30A, RL = 0.5Ω, Turn-On Rise Time tR VGS=10V, RG=7.5Ω Turn-Off Delay Time tD(OFF) (Note 4, 5) Turn-Off Fall Time tF Total Gate Charge QG VDS= 15V, ID= 30A, VGS= 10 V Gate-Source Charge QGS (Note 4, 5) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IF = 30A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR IF=30A, dIF/dt=100A/μs Notes: 1. Guaranteed by design, not subject to production testing. 2. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 3. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 30 1 ±100 V μA nA 30 45 V mΩ mΩ 1.0 20 30 1170 320 60 10 10 25 15 18 5.5 2 1.1 50 pF pF pF 20 20 40 30 35 ns ns ns ns nC nC nC 1.5 V 30 A 40 A 100 ns 2 of 4 QW-R502-140.A UT30N03 Power MOSFET TYPICAL CHARACTERISTICS Output Characteristics 40 Transfer Characteristics 40 VGS=10,9,8,7,6,5V 32 Drain Current, ID(A) Drain Current, ID (A) 32 24 4V 16 24 16 8 TC=150℃ 8 25℃ -55℃ 3V 0 0 5 0 1 2 3 4 5 Gate-to-Source Voltage, VGS(V) 6 Gate-to-Source Voltage, VGS(V) 1 2 3 4 Drain-to-Source Voltage, VGS(V) Capacitance, C(pF) 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-140.A UT30N03 Normalized Effective Transient Thermal Impedance Power MOSFET TYPICAL CHARACTERISTICS(Cont) Normalized Thermal Transient Impedance,Junction-to-Case 2 1 Duty Cycle=0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 3 On-Resistance vs. Drain Current 0.07 On-Resistance, RDS(ON) (Ω) 0.06 0.05 VGS=4.5V 0.04 0.03 VGS=10V 0.02 0.01 0 0 8 16 24 32 Drain Current, ID(A) 40 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-140.A