UNISONIC TECHNOLOGIES CO., LTD UTT40N03 Power MOSFET 40A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTT40N03 power MOSFET provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness FEATURES * RDS(ON) = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT40N03L-TM3-T UTT40N03G-TM3-T UTT40N03L-TN3-R UTT40N03G-TN3-R UTT40N03L-TN3-T UTT40N03G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tape Reel Tube 1 of 5 QW-R502-689.B UTT40N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V 40 A Continuous ID Drain Current Pulsed (Note 1) IDM 160 A Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS =30 V, VGS =0 V, TJ=25°C VGS=+20V VGS=-20V 30 VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=16A 1 DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS =25 V, VGS =0V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge QGS VDS =24V, VGS =5 V, ID =20A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDS =15 V, ID=20 A, VGS =10V, RG =3.3 Ω, RL =0.75 Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS VD=VG=0V , VS=1.3V Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD TJ=25°C, IS=40A, VGS=0V Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 14 20 1 +100 -100 V µA nA nA 3 17 23 V mΩ mΩ 800 380 133 pF pF pF 17 3 10 7.2 60 22.5 10 nC nC nC ns ns ns ns 40 160 1.3 A A V 2 of 5 QW-R502-689.B Normalized On-Resistance,RDS(ON) On-Resistance,RDS(ON) (mΩ) Drain Current,ID (A) Drain Current,ID (A) Power,PD (W) Drain Current,ID (A) UTT40N03 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET TYPICAL CHARACTERISTICS QW-R502-689.B 3 of 5 Capacitance,C (pF) Gate to Source Voltage,VGS (V) Gate Threshold Voltage,VGS(TH) (V) Reverse Drain Current,IS (A) Normalized Thermal Response,RthJC Drain Current,ID (A) UTT40N03 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET TYPICAL CHARACTERISTICS(Cont.) QW-R502-689.B 4 of 5 UTT40N03 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-689.B