UNISONIC TECHNOLOGIES CO., LTD UTC654 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION As P-Channel Logic Level MOSFET, UTC654 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process. SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTC654L-AG6-R UTC654G-AG6-R Package SOT-26 1 D Pin Assignment 2 3 4 5 D G S D 6 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-153.B UTC654 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 Continuous Drain Current (Note 3) ID -3.6 A Pulsed Drain Current (Note 2) IDM -10 Power Dissipation PD 1.6 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP 78 30 MAX UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ON CHARACTERISTICS Gate-Threshold Voltage VGS(TH) Static Drain-Source On-Resistance (Note2) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT VGS =0V, ID =-250 µA -30 VDS =-24V, VGS =0 V VDS = 0V, VGS =±20V Referenced to 25°C,ID=-250μA -22 VDS =VGS, ID =-250 µA VGS =-10 V, ID =-3.6A VGS =-4.5 V, ID =-2.7A -1.9 63 100 -1 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=-15V, VGS =0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note2) tD(ON) Turn-ON Rise Time tR VDD =-15V, ID=-1A, VGS =-10V, RGEN =6 Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge (Note2) QG VDS =-15V,VGS=-10V,ID=-3.6 A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V,IS=-1.3 A (Note 2) Maximum Continuous Drain Source Diode IS Forward Current Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -1 ±100 -3 75 125 298 83 39 V µA nA mV/℃ V mΩ pF 6 13 11 6 6.2 1 1.2 12 23 20 12 9 -0.8 -1.2 V -1.3 A ns nC 2 of 5 QW-R502-153.B UTC654 Power MOSFET TYPICAL CHARACTERISTICS On-Region Characteristics 15 VGS=-10V -6.0V Drain Current,-ID (A) 12 2 -5.0V 1.8 -4.5V 9 Normalized Drain-Source On-Resistance,RDS(ON) -4.0V 6 -3.5V 3 -3.0V 0 VGS=-3.5V -4.0V 1.6 -4.5V 1.4 1.2 -5.0V 1 -6.0V 0.8 -7.0V -10V 0.6 0.4 1 2 3 4 Drain to Source Voltage,-VDS (V) 0 5 3 6 9 12 15 Drain Current,-ID (A) On-Resistance,RDS(ON) (Ω) Normalized Drain-Source OnResistance,RDS(ON) 0 Transfer Characteristics VDS=-5.0V TA=-55℃ Bodt Diode Forward Voltage Variation with Source Current and Temperature 10 25℃ Reverse Drain Current,-IS (A) 10 8 Drain Current,-ID (A) On-Resistance Variation with Drain Current and Gate Voltage 125℃ 6 4 2 VGS=0V 1 TA=125℃ 0.1 25℃ -55℃ 0.01 0.001 0.0001 0 1 2 3 4 5 Gate to Source Voltage,-VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0.2 0.4 0.6 0.8 1 1.2 Body Diode Forward Voltage,-VSD (V) 3 of 5 QW-R502-153.B UTC654 Power MOSFET TYPICAL CHARACTERISTICS Capacitance (pF) Gate-Source Voltage,-VGS (V) Single Pulse Maximum Power Dissipation Maximum Safe Operating Area 100 10 10 RDS(ON) Limit 6 100ms VGS=-10V Single Pulse RθJA=156℃/W TA=25℃ 4 1s DC 1 10 Drain-Source Voltage,-VDS (V) 2 100 0 0.01 0.1 1 10 100 Time,t1 (sec) Normalized Effective Transient Thermal Resistance,r(t) 0.01 0.1 8 10μs 100μs 1ms 10ms 1 0.1 Single Pulse RθJA=156℃/W TA=25℃ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-153.B UTC654 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-153.B