FREESCALE 100A100JP500X

Freescale Semiconductor
Technical Data
Document Number: MRFG35005MT1
Rev. 3, 1/2006
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MRFG35005MT1
Gallium Arsenide PHEMT
3.5 GHz, 4.5 W, 12 V
POWER FET
GaAs PHEMT
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
• 4.5 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Symbol
Value
Unit
VDSS
15
Vdc
(2)
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
10.5
0.07 (2)
W
W/°C
Gate - Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
30
dBm
Storage Temperature Range
Tstg
- 65 to +150
°C
Channel Temperature (1)
Tch
175
°C
Operating Case Temperature Range
TC
- 20 to +85
°C
Symbol
Value
Unit
RθJC
14.2 (2)
°C/W
ARCHIVE INFORMATION
ARCHIVE INFORMATION
RF Power Field Effect Transistor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Class AB
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
 Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35005MT1
1
ARCHIVE INFORMATION
Characteristic
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
—
1.7
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
< 1.0
100
µAdc
Off State Drain Current
(VDS = 12 Vdc, VGS = - 2.5 Vdc)
IDSO
—
—
600
µAdc
Off State Current
(VDS = 28.5 Vdc, VGS = - 2.5 Vdc)
IDSX
—
< 1.0
9
mAdc
Gate - Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 8.7 mA)
VGS(th)
- 1.2
- 0.9
- 0.7
Vdc
Quiescent Gate Voltage
(VDS = 12 Vdc, ID = 80 mA)
VGS(Q)
- 1.1
- 0.8
- 0.6
Vdc
Power Gain
(VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz)
Gps
10
11
—
dB
Output Power, 1 dB Compression Point
(VDD = 12 Vdc, IDQ = 80 mA, f = 3.55 GHz)
P1dB
—
4.5
—
W
hD
22
25
—
%
ACPR
—
- 42
- 39
dBc
Drain Efficiency
(VDD = 12 Vdc, IDQ = 80 mA, Pout = 450 mW Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(VDD = 12 Vdc, Pout = 450 mW Avg., IDQ = 80 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ARCHIVE INFORMATION
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
MRFG35005MT1
2
RF Device Data
Freescale Semiconductor
VGS
VDD
C11
C10
C9
C8
C7
C6
C5
C16
C17
C18
C19
C20
C21
C22
R1
C3 C4
C14 C15
RF
INPUT
C2
Z1
ARCHIVE INFORMATION
Z15
Z2
Z3
C12
Z4
C13
Z6 Z7 Z8 Z9 Z10 Z11
RF
OUTPUT
C23
Z12 Z13 Z14
Z16
Z17
C1
Z18
C24
C29
Z1, Z18
Z2
Z3
Z4
Z5, Z15
Z6, Z8, Z10
Z7, Z9
0.125″
0.435″
0.298″
0.336″
0.527″
0.050″
0.125″
C28
C27
x 0.044″ Microstrip
x 0.044″ Microstrip
x 0.254″ Microstrip
x 0.590″ Microstrip
x 0.015″ Microstrip
x 0.025″ Microstrip
x 0.025″ Microstrip
C26
Z11
Z12
Z13
Z14
Z16
Z17
PCB
C25
0.400″ x 0.081″ Microstrip
0.120″ x 0.408″ Microstrip
0.259″ x 0.058″ Microstrip
0.269″ x 0.348″ Microstrip
0.149″ x 0.062″ Microstrip
0.553″ x 0.044″ Microstrip
Rogers 4350, 20 mil, εr = 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C24
7.5 pF Chip Capacitors
100A7R5JP150X
ATC
C2
0.4 pF Chip Capacitor (0805)
08051J0R4BBT
AVX
C3, C4, C14, C15
3.9 pF Chip Capacitors (0805)
08051J3R9BBT
AVX
C5, C16
10 pF Chip Capacitors
100A100JP500X
ATC
C6, C17
100 pF Chip Capacitors
100A101JP500X
ATC
C7, C18
100 pF Chip Capacitors
100B101JP500X
ATC
C8, C19
1000 pF Chip Capacitors
100B102JP500X
ATC
C9, C20
3.9 µF Chip Capacitors
ATC
C10, C21
0.1 µF Chip Capacitors
ATC
C11, C22
22 µF, 35 V Tantalum Surface Mount Capacitors
C12, C28
0.1 pF Chip Capacitors (0805)
08051J0R1BBT
AVX
C13, C26, C27
0.3 pF Chip Capacitors (0805)
08051J0R3BBT
AVX
C23
1.0 pF Chip Capacitor (0805)
08051J1R0BBT
AVX
C25
1.2 pF Chip Capacitor (0805)
08051J1R2BBT
AVX
C29
0.9 pF Chip Capacitor (0805)
08051J0R9BBT
AVX
R1
100 W Chip Resistor
Newark
ARCHIVE INFORMATION
Z5
Newark
MRFG35005MT1
RF Device Data
Freescale Semiconductor
3
C7
C18
C6
C11
C10
C9
C5
C8
C17
R1
C19
C20
C21
C22
C16
C4
C14
C12
C15
C13
ARCHIVE INFORMATION
C2
C23
C1
C24
C25
C29
C28
C27
C26
MRFG35005M
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
ARCHIVE INFORMATION
C3
MRFG35005MT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−10
IRL
VDS = 12 Vdc, IDQ = 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.868é−115.15_, ΓL = 0.764é−139.11_
−30
−40
−40
ACPR
−50
−60
0.01
−50
−60
1
0.1
Pout, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
17.5
15
40
VDS = 12 Vdc, IDQ = 85 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.868é−115.18_, ΓL = 0.764é−139.11_
PAE
35
30
GT
12.5
25
10
20
7.5
15
5
10
2.5
5
0
PAE, POWER ADDED EFFICIENCY (%)
20
0
0.01
0.1
1
Pout, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
ARCHIVE INFORMATION
−30
ACPR (dBc)
−20
−20
G T , TRANSDUCER GAIN (dB)
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB)
−10
MRFG35005MT1
RF Device Data
Freescale Semiconductor
5
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
0.50
0.903
- 171.71
7.441
83.44
0.029
4.18
0.604
- 171.44
0.55
0.903
- 173.53
6.807
81.55
0.030
3.31
0.603
- 172.51
0.60
0.901
- 175.37
6.268
79.64
0.030
2.49
0.602
- 173.76
0.65
0.901
- 177.11
5.817
77.76
0.030
1.53
0.602
- 175.04
0.70
0.902
- 178.58
5.441
75.93
0.030
0.64
0.602
- 176.15
0.75
0.900
179.95
5.096
74.17
0.030
- 0.21
0.600
- 177.32
0.80
0.901
178.58
4.804
72.37
0.030
- 0.90
0.600
- 178.45
0.85
0.901
177.36
4.516
70.46
0.030
- 1.80
0.600
- 179.44
0.90
0.899
176.17
4.293
68.89
0.030
- 2.30
0.599
179.38
0.95
0.899
174.93
4.089
67.19
0.030
- 3.17
0.600
178.20
1.00
0.901
173.84
3.900
65.58
0.030
- 4.01
0.600
177.19
1.05
0.900
172.74
3.730
63.88
0.030
- 4.63
0.600
176.10
1.10
0.899
171.57
3.567
62.18
0.031
- 5.38
0.600
175.06
1.15
0.900
170.42
3.423
60.54
0.031
- 6.01
0.601
174.08
1.20
0.899
169.31
3.284
58.91
0.031
- 6.66
0.601
173.04
1.25
0.898
168.10
3.154
57.19
0.031
- 7.52
0.602
171.90
1.30
0.901
166.96
3.040
55.59
0.031
- 8.14
0.602
171.14
1.35
0.897
165.99
2.928
54.05
0.031
- 8.73
0.600
170.54
1.40
0.903
164.48
2.821
52.41
0.031
- 9.30
0.606
169.31
1.45
0.901
163.52
2.720
50.95
0.031
- 9.89
0.606
168.98
1.50
0.900
160.23
2.618
49.25
0.030
- 10.77
0.607
170.81
1.55
0.900
159.17
2.537
47.79
0.030
- 11.27
0.609
170.02
1.60
0.899
158.30
2.456
46.40
0.030
- 11.82
0.609
169.38
1.65
0.902
157.39
2.386
44.91
0.030
- 12.27
0.609
168.87
1.70
0.903
156.46
2.317
43.49
0.030
- 12.67
0.610
168.03
1.75
0.902
155.63
2.251
41.97
0.030
- 13.06
0.613
167.41
1.80
0.903
154.92
2.195
40.59
0.030
- 13.50
0.612
166.88
1.85
0.904
154.09
2.137
39.12
0.030
- 13.91
0.613
165.94
1.90
0.904
153.38
2.080
37.80
0.030
- 14.35
0.615
165.27
1.95
0.903
152.74
2.030
36.43
0.030
- 14.79
0.615
164.72
2.00
0.906
152.00
1.984
34.98
0.030
- 15.36
0.615
163.90
2.05
0.905
151.41
1.937
33.71
0.030
- 15.79
0.618
163.26
2.10
0.904
150.85
1.897
32.47
0.031
- 16.26
0.619
162.83
2.15
0.906
150.13
1.860
31.10
0.031
- 16.74
0.617
162.02
2.20
0.906
149.60
1.822
29.77
0.031
- 17.43
0.619
161.22
2.25
0.905
149.11
1.788
28.49
0.031
- 17.97
0.620
160.82
2.30
0.906
148.41
1.761
27.10
0.031
- 18.45
0.619
160.12
2.35
0.906
147.74
1.729
25.78
0.031
- 18.73
0.620
159.20
2.40
0.904
147.11
1.701
24.47
0.031
- 19.16
0.620
158.79
2.45
0.903
146.23
1.677
22.98
0.031
- 19.61
0.620
158.15
2.50
0.902
145.41
1.651
21.58
0.031
- 20.07
0.619
157.20
2.55
0.901
144.66
1.632
20.17
0.031
- 20.42
0.621
156.64
2.60
0.899
143.78
1.612
18.88
0.032
- 20.71
0.619
156.02
2.65
0.899
142.76
1.591
17.38
0.032
- 21.29
0.618
155.10
2.70
0.898
141.87
1.571
15.88
0.032
- 21.77
0.619
154.49
2.75
0.894
140.80
1.554
14.50
0.033
- 22.47
0.618
154.05
2.80
0.895
139.70
1.539
12.83
0.033
- 23.36
0.616
153.08
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA
MRFG35005MT1
6
RF Device Data
Freescale Semiconductor
S11
S21
S12
S22
f
GHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2.85
0.895
138.63
1.522
11.37
0.034
- 24.77
0.618
152.46
2.90
0.893
137.48
1.507
9.90
0.034
- 26.15
0.618
151.97
2.95
0.893
136.05
1.493
8.24
0.034
- 27.11
0.616
150.93
3.00
0.894
134.72
1.478
6.55
0.034
- 27.92
0.618
150.06
3.05
0.892
133.46
1.465
4.95
0.034
- 28.51
0.617
149.53
3.10
0.890
131.81
1.453
3.30
0.034
- 29.31
0.616
148.45
3.15
0.892
130.31
1.436
1.60
0.034
- 29.98
0.616
147.51
3.20
0.891
128.98
1.421
0.04
0.034
- 30.69
0.617
146.90
3.25
0.888
127.31
1.409
- 1.72
0.034
- 31.47
0.615
145.95
3.30
0.890
125.83
1.394
- 3.40
0.034
- 32.45
0.616
145.01
3.35
0.889
124.49
1.380
- 4.89
0.034
- 33.06
0.616
144.44
3.40
0.887
122.78
1.367
- 6.59
0.034
- 33.59
0.615
143.59
3.45
0.889
121.40
1.352
- 8.31
0.034
- 34.06
0.615
142.69
3.50
0.888
119.96
1.338
- 9.91
0.035
- 34.46
0.616
141.92
3.55
0.887
118.32
1.328
- 11.56
0.035
- 35.34
0.615
141.09
3.60
0.888
116.96
1.313
- 13.16
0.035
- 36.09
0.613
140.03
3.65
0.887
115.68
1.299
- 14.69
0.036
- 36.68
0.613
139.19
3.70
0.887
114.24
1.287
- 16.36
0.036
- 37.71
0.612
138.40
3.75
0.887
113.05
1.274
- 17.90
0.036
- 38.84
0.612
137.36
3.80
0.888
111.84
1.262
- 19.43
0.036
- 39.90
0.613
136.45
3.85
0.888
110.59
1.252
- 20.85
0.036
- 40.73
0.613
135.74
3.90
0.887
109.45
1.240
- 22.36
0.036
- 41.33
0.612
134.56
3.95
0.888
108.32
1.230
- 24.01
0.036
- 41.73
0.613
133.64
4.00
0.887
107.24
1.222
- 25.35
0.036
- 42.00
0.612
133.05
4.05
0.886
106.10
1.216
- 26.93
0.037
- 42.60
0.611
131.91
4.10
0.887
105.02
1.205
- 28.43
0.037
- 43.13
0.611
130.81
4.15
0.886
104.22
1.198
- 29.78
0.037
- 43.70
0.609
130.15
4.20
0.884
103.08
1.195
- 31.44
0.038
- 44.59
0.607
128.89
4.25
0.885
102.00
1.189
- 33.00
0.038
- 45.54
0.608
127.57
4.30
0.885
101.08
1.184
- 34.46
0.038
- 46.22
0.608
126.81
4.35
0.884
100.08
1.183
- 35.96
0.039
- 46.93
0.605
125.63
4.40
0.883
98.90
1.176
- 37.67
0.039
- 48.09
0.606
124.16
4.45
0.882
97.99
1.172
- 39.19
0.039
- 49.06
0.607
123.26
4.50
0.881
96.91
1.176
- 40.74
0.040
- 49.87
0.604
122.03
4.55
0.880
95.41
1.172
- 42.48
0.040
- 50.58
0.603
120.40
4.60
0.879
94.29
1.172
- 44.02
0.040
- 51.24
0.601
119.45
4.65
0.878
92.80
1.177
- 45.83
0.041
- 52.21
0.597
118.22
4.70
0.877
91.10
1.175
- 47.87
0.042
- 53.61
0.594
116.51
4.75
0.876
89.66
1.176
- 49.70
0.042
- 55.11
0.594
115.24
4.80
0.874
87.90
1.178
- 51.58
0.042
- 56.51
0.590
113.89
4.85
0.874
86.08
1.177
- 53.56
0.042
- 57.66
0.589
112.15
4.90
0.870
84.39
1.175
- 55.56
0.042
- 58.60
0.588
110.76
4.95
0.867
82.48
1.177
- 57.53
0.043
- 59.41
0.585
109.40
5.00
0.866
80.32
1.179
- 59.75
0.043
- 60.39
0.583
107.71
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 85 mA (continued)
MRFG35005MT1
RF Device Data
Freescale Semiconductor
7
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRFG35005MT1
8
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRFG35005MT1
RF Device Data
Freescale Semiconductor
9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRFG35005MT1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
0.146
3.71
A
F
0.095
2.41
3
B
D
1
2
R
0.115
2.92
0.115
2.92
L
0.020
0.51
4
0.35 (0.89) X 45_" 5 _
N
K
Q
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉ
ÉÉ
ÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉÉ
C
4
ZONE W
1
2
3
S
G
ZONE X
VIEW Y - Y
mm
SOLDER FOOTPRINT
P
U
H
ZONE V
inches
10_DRAFT
Y
Y
E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
STYLE 1:
PIN 1.
2.
3.
4.
DRAIN
GATE
SOURCE
SOURCE
CASE 466 - 03
ISSUE D
PLD- 1.5
PLASTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
0.255
0.265
0.225
0.235
0.065
0.072
0.130
0.150
0.021
0.026
0.026
0.044
0.050
0.070
0.045
0.063
0.160
0.180
0.273
0.285
0.245
0.255
0.230
0.240
0.000
0.008
0.055
0.063
0.200
0.210
0.006
0.012
0.006
0.012
0.000
0.021
0.000
0.010
0.000
0.010
MILLIMETERS
MIN
MAX
6.48
6.73
5.72
5.97
1.65
1.83
3.30
3.81
0.53
0.66
0.66
1.12
1.27
1.78
1.14
1.60
4.06
4.57
6.93
7.24
6.22
6.48
5.84
6.10
0.00
0.20
1.40
1.60
5.08
5.33
0.15
0.31
0.15
0.31
0.00
0.53
0.00
0.25
0.00
0.25
MRFG35005MT1
RF Device Data
Freescale Semiconductor
11
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MRFG35005MT1
Document Number: MRFG35005MT1
Rev. 3, 1/2006
12
RF Device Data
Freescale Semiconductor