Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical N - CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 25 Watts Avg. Power Gain — 17.8 dB Efficiency — 25% Adjacent Channel Power — 750 kHz: - 47 dBc @ 30 kHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF9135LR3 MRF9135LSR3 880 MHz, 135 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF9135LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9135LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 298 1.7 W W/°C Storage Temperature Range Tstg - 65 to +200 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.6 °C/W ARCHIVE INFORMATION ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Class 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C7 (Minimum) 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF9135LR3 MRF9135LSR3 1 Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 450 μA) VGS(th) 2 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 1100 mAdc) VGS(Q) 3.25 3.7 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 9 Adc) gfs — 12 — S Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 109 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 4.4 — pF Off Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier, PAR = 9.8 dB @ 0.01% Probability on CCDF Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 880.0 MHz) Gps 16 17.8 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 880.0 MHz) η 22 25 — % ACPR — - 47 - 45 dBc Input Return Loss (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 880.0 MHz) IRL — - 13.5 -9 dB Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) Gps — 17 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) η — 24 — % ACPR — - 46 — dBc IRL — - 12.5 — dB Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 25 W Avg. N - CDMA, IDQ = 1100 mA, f = 865 MHz and 895 MHz) ARCHIVE INFORMATION ARCHIVE INFORMATION On Characteristics MRF9135LR3 MRF9135LSR3 2 RF Device Data Freescale Semiconductor B1 B2 VGG + + C9 RF INPUT Z1 C8 Z2 C7 Z3 Z4 L1 Z5 L2 Z6 Z7 Z8 C5 Z9 Z10 C10 Z11 C11 Z12 Z13 Z14 C18 C19 Z15 + + + VDD C20 C21 C22 C23 Z16 Z17 Z18 Z19 RF OUTPUT C17 C1 DUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C3 C4 C6 C12 0.430″ x 0.080″ Microstrip 0.430″ x 0.080″ Microstrip 0.800″ x 0.080″ Microstrip 0.200″ x 0.220″ Microstrip 0.110″ x 0.220″ Microstrip 0.175″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.630″ Taper 0.250″ x 0.630″ Microstrip 0.050″ x 0.630″ Microstrip 0.050″ x 0.630″ Microstrip C13 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB C14 C15 C16 0.105″ x 0.630″ Microstrip 0.145″ x 0.630″ Microstrip 0.200″ x 0.630″ x 0.220″ Taper 0.180″ x 0.220″ Microstrip 0.110″ x 0.220″ Microstrip 0.200″ x 0.220″ Microstrip 0.900″ x 0.080″ Microstrip 0.360″ x 0.080″ Microstrip 0.410″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. 880 MHz Test Circuit Schematic Table 5. 880 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short 2743019447 Fair Rite C1, C7, C17, C18 47 pF Chip Capacitors 100B470JP 500X ATC C2, C16 0.6- 4.5 Variable Capacitors, Gigatrim 27271SL Johanson C3 8.2 pF Chip Capacitor 100B8R2BP 500X ATC C4, C15 0.8- 8.0 Variable Capacitors, Gigatrim 27291SL Johanson C5, C6 12 pF Chip Capacitors 100B120JP 500X ATC C8 20K pF Chip Capacitor 200B203MP50X ATC C9, C20, C21, C22 10 μF, 35 V Tantalum Capacitors T491D106K035AS Kemet C10, C11, C12, C13 7.5 pF Chip Capacitors 100B7R5JP 500X ATC C14 11 pF Chip Capacitor 100B110JP 500X ATC C19 0.56 μF, 50 V Chip Capacitor C1825C564K5RA7800 Kemet C23 470 μF, 63 V Electrolytic Capacitor SME63VB471M12X25LL United Chemi - Con L1, L2 12.5 nH Coilcraft inductors A04T- 5 Coilcraft WB1, WB2 10 mil Brass Shim (0.205 x 0.530) RF - Design Lab RF - Design Lab ARCHIVE INFORMATION ARCHIVE INFORMATION C2 MRF9135LR3 MRF9135LSR3 RF Device Data Freescale Semiconductor 3 C23 C9 B1 C8 C20 C21 C22 C19 B2 C7 C10 C5 C11 C18 L2 L1 WB1 WB2 C14 C2 C3 C13 C6 C12 C17 C15 CUT OUT AREA C4 C16 MRF9135L 900 MHz Rev−02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 880 MHz Test Circuit Component Layout ARCHIVE INFORMATION ARCHIVE INFORMATION C1 MRF9135LR3 MRF9135LSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS VDD = 26 Vdc Pout = 25 W (Avg.) IDQ = 1100 mA N−CDMA IS−95 Pilot, Sync, Paging Traffic Codes 8 through 13 16 15 14 IRL 20 13 −20 −10 −30 −12 −40 ACPR −50 11 860 865 870 875 880 885 890 895 −16 −60 900 −18 f, FREQUENCY (MHz) Figure 3. Class AB Broadband Circuit Performance VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz 18.5 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 19 IDQ = 1650 mA 18 1320 mA 17.5 1100 mA 17 16.5 880 mA 16 1 10 1650 mA 1320 mA −50 1100 mA 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power G ps , POWER GAIN (dB) −30 −40 3rd Order 5th Order −60 IDQ = 880 mA −40 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc IDQ = 1100 mA f1 = 880 MHz, f2 = 880.1 MHz −50 −30 100 −10 −20 VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz −20 −60 15.5 IMD, INTERMODULATION DISTORTION (dBc) ARCHIVE INFORMATION 12 −14 7th Order 22 60 20 50 18 16 30 14 20 12 −70 −80 40 Gps VDD = 26 Vdc IDQ = 1100 mA f1 = 880 MHz ηD 10 10 1 100 10 ARCHIVE INFORMATION 25 ηD ηD, DRAIN EFFICIENCY (%) 17 IRL, INPUT RETURN LOSS (dB) 30 Gps ACPR (dBc) G ps , POWER GAIN (dB) 18 ηD, DRAIN EFFICIENCY (%) 35 19 0 1 100 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MRF9135LR3 MRF9135LSR3 RF Device Data Freescale Semiconductor 5 60 G ps , POWER GAIN (dB) 18 40 Gps 16 20 ηD 14 0 VDD = 26 Vdc IDQ = 1100 mA f1 = 880 MHz, f2 = 880.1 MHz 12 −20 10 −40 IMD 8 −60 ARCHIVE INFORMATION 1 100 10 Pout, OUTPUT POWER (WATTS) PEP 20 60 Gps G ps , POWER GAIN (dB) 18 16 40 20 ηD VDD = 26 Vdc, IDQ = 1100 mA f = 880 MHz N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 through 13 14 12 0 −20 10 ACPR 750 kHz −40 8 ALT 1.98 MHz −60 6 −80 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. N - CDMA Performance Output Power versus Gain, ACPR, Efficiency MTTF FACTOR (HOURS x AMPS2) 1011 1010 ηD, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 8. Power Gain, Efficiency and IMD versus Output Power ARCHIVE INFORMATION 20 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 109 108 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 10. MTTF Factor versus Junction Temperature MRF9135LR3 MRF9135LSR3 6 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −70 −80 −90 0.0001 ARCHIVE INFORMATION −60 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . ............ .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW .... . ................... ......... .......... ..... ......... . ............. ...... ... .. . . . . . . . .............. ................. ......... .......... ... ...... ........ ...... . . .......... . . . . . . . . . . ............. . ......... . . . . .. . . .. . . . . . .. .... . −ACPR in 30 kHz +ACPR in 30 kHz ................. ........ .. ............ . . ............ ... ................ . . . . . . Integrated BW Integrated BW .. ..... ............. ........ ...... .......... ........... −100 PEAK−TO−AVERAGE (dB) Figure 11. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 f, FREQUENCY (MHz) Figure 12. Single - Carrier N - CDMA Spectrum 3.6 ARCHIVE INFORMATION 100 MRF9135LR3 MRF9135LSR3 RF Device Data Freescale Semiconductor 7 f = 895 MHz Zsource f = 865 MHz f = 895 MHz Zload f = 865 MHz VDD = 26 V, IDQ =1100 mA, Pout = 25 W Avg. Zload Ω f MHz Zsource Ω 865 1.15 + j0.3 1.17 - j0.24 880 1.25 + j0.5 1.22 - j0.1 895 1.35 + j0.75 1.32 - j0.07 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION ARCHIVE INFORMATION Zo = 2 Ω Z load Figure 13. Series Equivalent Source and Load Impedance MRF9135LR3 MRF9135LSR3 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF9135LR3 MRF9135LSR3 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF9135LR3 MRF9135LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb ARCHIVE INFORMATION N R (INSULATOR) M T A M B M ccc M T A M M aaa M T A M ccc H B S (LID) M T A M B (LID) M (INSULATOR) B M C F E A T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF9135LR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF9135LSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF ARCHIVE INFORMATION B STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9135LR3 MRF9135LSR3 RF Device Data Freescale Semiconductor 11 Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9135LR3 MRF9135LSR3 Document Number: MRF9135L Rev. 8, 5/2006 12 RF Device Data Freescale Semiconductor