Freescale Semiconductor Technical Data Document Number: MRF9085 Rev. 11, 5/2006 RF Power Field Effect Transistors MRF9085LR3 MRF9085LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 20 Watts Power Gain — 17.9 dB Efficiency — 28% Adjacent Channel Power — 750 kHz: - 45.0 dBc @ 30 kHz BW 1.98 MHz: - 60.0 dBc @ 30 kHz BW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF9085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF9085LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.7 °C/W ARCHIVE INFORMATION ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. Freescale Semiconductor RF Product Device Data MRF9085LR3 MRF9085LSR3 4-1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model MRF9085LR3 MRF9085LSR3 M2 (Minimum) M1 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2.0 — 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) — 3.7 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs — 8.0 — S Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 73 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.9 — pF Characteristic On Characteristics Dynamic Characteristics (1) 1. Part is internally input matched. (continued) ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics MRF9085LR3 MRF9085LSR3 4-2 Freescale Semiconductor RF Product Device Data Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 17 17.9 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) η 36 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL — - 21 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Gps — 17.9 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) η — 40.0 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IRL — - 16 — dB Power Output, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 700 mA, f1 = 880.0 MHz) P1dB — 105 — W Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Gps — 17.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) η — 51 — % P1dB — 105 — W Power Output, 1 dB Compression Point, CW (1) (VDD = 26 Vdc, IDQ = 700 mA, f1 = 960 MHz) 1. These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2. ARCHIVE INFORMATION ARCHIVE INFORMATION Functional Tests (In Freescale Test Fixture, 50 ohm system) MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-3 B1 B2 B3 + C7 C8 C9 C16 L1 VDD + + + + C17 C18 C19 L2 C11 RF INPUT Z11 C6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C10 ARCHIVE INFORMATION C4 C3 Z15 Z16 Z17 Z18 Z19 C13 C15 C14 Z10 C1 B1, B2, B3 C1, C9, C15, C16 C3 C4, C13 C5, C6, C12 C7, C17, C18, C19 C8 C10, C11 C14 L1 L2 N1, N2 WB1, WB2 Z1 Z2 Z3 Z4 Z5 Z12 Z13 Z14 C5 C12 Z20 DUT Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, ATC 5.6 pF Chip Capacitor, ATC 0.8 - 8.0 Variable Capacitors, Gigatrim 8.2 pF Chip Capacitors, ATC 10 mF, 35 V Tantalum Surface Mount Capacitors, Kemet 20 K pF Chip Capacitor, ATC 16 pF Chip Capacitors, ATC 0.6 - 4.5 Variable Capacitor, Gigatrim 7.15 nH Inductor, Coilcraft 17.5 nH Inductor, Coilcraft N - Type Panel Mount, Stripline, M/A - Com 5 Mil BeCu Shim (0.225 x 0.525) 0.219″ x 0.080″ Microstrip 0.150″ x 0.080″ Microstrip 0.851″ x 0.080″ Microstrip 0.125″ x 0.220″ Microstrip 0.123″ x 0.220″ Microstrip Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 PCB 0.076″ x 0.220″ Microstrip 0.261″ x 0.220″ Microstrip 0.220″ x 0.630″ x 0.200″ Taper 0.240″ x 0.630″ Microstrip 0.060″ x 0.630″ Microstrip 0.067″ x 0.630″ Microstrip 0.233″ x 0.630″ Microstrip 0.630″ x 0.220″ x 0.200″ Taper 0.200″ x 0.220″ Microstrip 0.055″ x 0.220″ Microstrip 0.088″ x 0.220″ Microstrip 0.226″ x 0.220″ Microstrip 0.868″ x 0.080″ Microstrip 0.129″ x 0.080″ Microstrip 0.223″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 30 mils εr = 2.55 Figure 1. 865 - 895 MHz Broadband Test Circuit Schematic RF OUTPUT ARCHIVE INFORMATION VGG + MRF9085LR3 MRF9085LSR3 4-4 Freescale Semiconductor RF Product Device Data B1 B3 C8 B2 C6 C4 C5 CUTOUT C3 WB2 L2 WB1 L1 C16 C18 C9 C1 ARCHIVE INFORMATION C11 V DD C19 C17 C15 C12 C14 C10 C13 MRF9085 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 865 - 895 MHz Broadband Test Circuit Component Layout ARCHIVE INFORMATION C7 VGG MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-5 Gps 17 h 45 40 VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 700 mA Two−Tone, 100 kHz Tone Spacing 16 15 35 −28 −30 14 13 12 IMD −32 −34 VSWR 11 865 870 875 880 885 f, FREQUENCY (MHz) 890 895 900 −36 1.75 1.50 1.25 1.00 40 G ps , POWER GAIN (dB) 17 20 15 h 0 13 VDD = 26 Vdc IDQ = 700 mA f1 = 880.0 MHz f2 = 880.1 MHz 11 9 7 −20 −40 IMD −60 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 −10 −20 7th Order −50 −60 −70 17 16 40 15 30 h 13 12 1 10 100 Pout, OUTPUT POWER (WATTS) CW AVG. Figure 6. Power Gain, Efficiency versus Output Power 20 Gps, POWER GAIN (dB) 50 h, DRAIN EFFICIENCY (%) 17 VDD = 26 Vdc IDQ = 700 mA f = 880 MHz Single Tone 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion Products versus Output Power 19 14 5th Order −40 60 Gps 3rd Order −30 Figure 4. Power Gain, Efficiency, IMD versus Output Power 18 VDD = 26 Vdc IDQ = 700 mA f1 = 800.0 MHz f2 = 800.1 MHz 40 Gps 20 h VDD = 26 Vdc IDQ = 700 mA f = 880 MHz 15 0 −20 13 −40 11 750 kHz 10 9 0 7 −60 1.98 MHz −80 1 h, DRAIN EFFICIENCY (%) & ACPR (dB) Gps IMD, INTERMODULATION DISTORTION (dBc) 60 19 h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Class AB Broadband Circuit Performance Gps, POWER GAIN (dB) ARCHIVE INFORMATION 860 2.00 ARCHIVE INFORMATION 18 VSWR 50 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 19 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain, Efficiency, ACPR versus Output Power MRF9085LR3 MRF9085LSR3 4-6 Freescale Semiconductor RF Product Device Data Zload f = 865 MHz f = 895 MHz Zo = 2 Ω Zsource f = 865 MHz VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP f MHz Zload Ω Zsource Ω 865 1.35 - j1.92 1.26 - j0.15 880 1.33 - j1.66 1.26 - j0.10 895 1.28 - j1.30 1.21 - j0.20 Zsource = Test circuit impedance as measured from gate to ground. Zload Note: = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION ARCHIVE INFORMATION f = 895 MHz Z load Figure 8. Series Equivalent Source and Load Impedance MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-7 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF9085LR3 MRF9085LSR3 4-8 Freescale Semiconductor RF Product Device Data ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4-9 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF9085LR3 MRF9085LSR3 4 - 10 Freescale Semiconductor RF Product Device Data PACKAGE DIMENSIONS G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A M B M M bbb N ARCHIVE INFORMATION R (INSULATOR) T A M B M M ccc M T A M M aaa M T A M S (LID) ccc H T A M B M (LID) B M (INSULATOR) B M C F E T A A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF9085LR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF9085LSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF ARCHIVE INFORMATION B STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9085LR3 MRF9085LSR3 Freescale Semiconductor RF Product Device Data 4 - 11 Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF9085LR3 MRF9085LSR3 Document Number: MRF9085 4Rev. - 1211, 5/2006 Freescale Semiconductor RF Product Device Data