Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 13.6 dB Drain Efficiency — 23% IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2110 - 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF21085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF21085LSR3 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 224 1.28 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.78 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M3 (Minimum) MRF21085LR3 MRF21085LSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 3 3.9 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.21 Vdc Crss — 3.6 — pF Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) On Characteristics (DC) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13.6 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 20 23 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 — - 37.5 - 35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) ACPR — - 41 - 38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL — - 12 -9 dB 1. Part is internally matched both on input and output. (continued) MRF21085LR3 MRF21085LSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps — 13.6 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) η — 36 — % Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL — - 12 — dB P1dB — 100 — W Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz) MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 3 VBIAS R3 R1 R4 B1 + R2 C5 C4 C3 C7 C2 Z4 RF INPUT Z1 Z2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C8 C9 C10 + + C11 C12 Z8 Z3 C1 VSUPPLY L1 + Z5 Z6 RF OUTPUT C6 DUT 0.750″ x 0.084″ Microstrip 1.015″ x 0.084″ Microstrip 0.480″ x 0.800″ Microstrip 0.750″ x 0.050″ Microstrip 0.610″ x 0.800″ Microstrip 0.885″ x 0.084″ Microstrip 0.720″ x 0.084″ Microstrip 0.800″ x 0.070″ Microstrip Z7 0.030″ Glass Teflon®, Keene GX - 0300- 55- 22, εr = 2.55 Etched Circuit Boards MRF21085 Rev. 3, CMR Board PCB Figure 1. MRF21085L Test Circuit Schematic Table 5. MRF21085 Test Circuit Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1, C6 43 pF Chip Capacitors, ATC #100B430JCA500X C2 10 pF Chip Capacitor, ATC #100B100JCA500X C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C10 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C7 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X C8 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 C11, C12 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100″ ID N1, N2 Type N Flange Mounts, Omni Spectra #3052 - 1648- 10 R1 1.0 kΩ, 1/8 W Chip Resistor R2 180 kΩ, 1/8 W Chip Resistor R3, R4 10 Ω, 1/8 W Chip Resistors MRF21085LR3 MRF21085LSR3 4 RF Device Data Freescale Semiconductor C8 C7 C2 R1 B1 R2 C3 L1 R3 WB1 CUT OUT C5 C4 C1 C10 R4 C9 WB2 C11 C12 C6 MRF21085 Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21085L Test Circuit Component Layout MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 5 G ps 15 −40 10 −45 ACPR −50 5 −55 0 1 −30 −35 35 30 −40 −45 25 3rd Order −50 20 5th Order −55 15 η −60 10 7th Order 5 100 −65 30 10 40 4 10 Pout, OUTPUT POWER (WATTS) PEP Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Pout, OUTPUT POWER (WATTS Avg.) N−CDMA −25 24 −30 −35 −40 1150 mA −45 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 1000 mA −30 IM3 −40 ACPR −50 14 G ps 12 −55 4 −20 16 850 mA −50 VDD = 28 Vdc 2−Carrier W−CDMA Pout = 19 W (Avg.) 10 MHz Carrier Spacing IDQ = 1000 mA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) 18 1300 mA −10 IRL 20 IDQ = 700 mA 0 η 22 10 100 2110 2090 2130 2150 2170 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 6. 2-Carrier W-CDMA Broadband Performance 14.5 −60 2190 42 60 −24 40 13 30 η 20 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) Figure 7. CW Performance η, DRAIN EFFICIENCY (%) 13.5 12.5 41 50 G ps η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) IMD 14 40 −26 39 −27 38 −28 37 −29 36 −30 IDQ = 1000 mA f = 2140 MHz 10 MHz Tone Spacing 35 0 100 130 −25 η 10 −31 34 24 25 η, DRAIN EFFICIENCY (%) −35 45 VDD = 28 Vdc IDQ = 1000 mA f1 = 2135 MHz f2 = 2145 MHz 26 27 28 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 20 −30 IM3 −25 IMD, INTERMODULATION DISTORTION (dBc) 25 −25 η VDD = 28 Vdc, IDQ = 1000 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IM3 (dBc), ACPR (dBc) 30 IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS −32 29 VDD, DRAIN SUPPLY (V) Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF21085LR3 MRF21085LSR3 6 RF Device Data Freescale Semiconductor IDQ = 1300 mA G ps , POWER GAIN (dB) 1150 mA 14 1000 mA 850 mA 13.5 700 mA 13 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 12.5 4 10 40 −10 IRL 35 VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 1000 mA 10 MHz Tone Spacing 30 25 −30 15 Gps −35 10 2110 +20 2155 −40 2185 2170 3.84 MHz Channel BW +30 0 −10 −35 (dB) IMD, INTERMODULATION DISTORTION (dBc) 3rd Order 2140 Figure 10. Two-Tone Broadband Performance −20 −30 2125 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power −25 −25 IMD Pout, OUTPUT POWER (WATTS) PEP VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz −20 20 2095 100 −15 η IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 14.5 G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −40 −20 −30 −40 5th Order −45 −50 7th Order −70 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −60 −50 −55 0.1 1 10 Df, TONE SPACING (kHz) Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing 30 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 12. 2-Carrier W-CDMA Spectrum MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 7 f = 2170 MHz Zo = 5 Ω Zload f = 2110 MHz f = 2170 MHz Zsource f = 2110 MHz VDD = 28 V, IDQ = 1000 mA, Pout = 19 W Avg. f MHz Zsource Ω Zload Ω 2110 1.10 - j3.71 1.23 - j2.10 2140 1.11 - j3.57 1.26 - j1.92 2170 1.12 - j3.40 1.25 - j1.76 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF21085LR3 MRF21085LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF21085LR3 MRF21085LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A M B M ccc M T A M M aaa M T A M M T A M B (LID) B S (LID) ccc H R (INSULATOR) M (INSULATOR) B M C F E A T A SEATING PLANE CASE 465 - 06 ISSUE G NI - 780 MRF21085LR3 (FLANGE) 4X U (FLANGE) 1 K 2X 2 B (FLANGE) D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A M T A M S (INSULATOR) bbb M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B DIM A B C D E F G H K M N Q R S aaa bbb ccc DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE CASE 465A - 06 ISSUE H NI - 780S MRF21085LSR3 MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21085LR3 MRF21085LSR3 Document Number: MRF21085 Rev. 9, 5/2006 12 RF Device Data Freescale Semiconductor