FREESCALE MRF5S21130HSR3

Freescale Semiconductor
Technical Data
MRF5S21130H
Rev. 2, 1/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S21130HR3
MRF5S21130HSR3
Designed for W - CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 28 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S21130HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S21130HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
372
2.13
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
92
W
Symbol
Value (1,2)
Unit
CW Operation
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 76°C, 28 W CW
RθJC
0.44
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.5
—
S
Crss
—
2.6
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Peak/Avg. = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
Gps
12
13.5
—
dB
Drain Efficiency
ηD
24
26
—
%
Intermodulation Distortion
IM3
- 37
- 35
dBc
Adjacent Channel Power Ratio
Input Return Loss
ACPR
—
- 39
- 37
dBc
IRL
—
- 12
-9
dB
1. Part is internally matched both on input and output.
MRF5S21130HR3 MRF5S21130HSR3
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
+
C13
C11
+
C1
R2
C3
+
C15
+
C20
VSUPPLY
C9
C5
Z9
Z7
RF
INPUT Z1
Z2
C7
Z3
Z4
DUT
Z8
Z11
C18
Z12
Z13
Z14
Z15
Z16
RF
OUTPUT
Z5
C17
Z10
C8
C19
Z6
C10
C6
+
C2
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
+
C14
C12
+
C16
C4
0.500″ x 0.083″ Microstrip
0.995″ x 0.083″ Microstrip
0.905″ x 0.083″ Microstrip
0.159″ x 1.024″ Microstrip
0.117″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.000″ Microstrip
Z9, Z10
Z11
Z12
Z13
Z14, Z15
Z16
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.000″ Microstrip
0.531″ x 0.083″ Microstrip
0.994″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 1. MRF5S21130HR3(SR3) Test Circuit Schematic
Table 5. MRF5S21130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C13, C14, C15, C16
10 µF, 35 V Tantalum Capacitors
293D1106X9035D
Vishay - Sprague
C3, C4, C11, C12
220 nF Chip Capacitors (1812)
1812Y224KXA
Vishay - Vitramon
C5, C6, C7, C9, C10, C18, C19
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C8
0.1 pF 100B Chip Capacitor
100B0R1BW
ATC
C17
0.5 pF 100B Chip Capacitor
100B0R5BW
ATC
C20
220 µF, 63 V Electrolytic Capacitor, Radial
13668221
Philips
R1, R2
1 kW, 1/4 W Chip Resistors
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
3
C1
C9
C3
C11
C20
C13 C15
R1
R2
CUT OUT AREA
C7
C5
C8
C18
C17
C19
C6
C2
C4
C10
C12
C14 C16
MRF5S21130
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S21130HR3(SR3) Test Circuit Component Layout
MRF5S21130HR3 MRF5S21130HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
12
25
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
11
10
IRL
20
−28
9
−32
IM3
8
7
−36
ACPR
6
2060
−40
2080
2100
2120
2140
2160
2180
2200
−10
−44
2220
−15
−20
−25
−30
IRL, INPUT RETURN LOSS (dB)
30
ηD
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
13
ηD, DRAIN
EFFICIENCY (%)
35
Gps
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
−25
IDQ = 1600 mA
G ps , POWER GAIN (dB)
14.5
1400 mA
14
1200 mA
13.5
1000 mA
800 mA
13
12.5
12
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
11.5
11
1
10
100
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
15
−30
−35
IDQ = 1600 mA
−40
1400 mA
1200 mA
−45
−50
800 mA
1000 mA
−60
−65
1000
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
57
3rd Order
−30
Ideal
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two−Tone Measurement,
10 MHz Tone Spacing
−55
−35
−40
5th Order
−45
7th Order
−50
−55
55
P3dB = 52.58 dBm (181.1 W)
P1dB = 51.88 dBm (154.17 W)
53
Actual
51
49
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 5 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
−60
0.1
1
10
100
47
33 34
35 36
37
38
39
40
41
42
43 44
45
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
46
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
5
35
109
−20
ηD
VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @
3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
30
25
−25
−30
IM3
ACPR
20
−35
Gps
15
−40
10
−45
5
−50
0
5
10
15
20
25
30
35
40
−55
45
IM3 (dBc), ACPR (dBc)
MTTF FACTOR (HOURS x AMPS 2 )
ηD, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
108
107
106
100
120
Pout, OUTPUT POWER (WATTS) AVG. (W−CDMA)
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
TYPICAL CHARACTERISTICS
W - CDMA TEST SIGNAL
−20
100
3.84 MHz
Channel BW
−30
−40
−50
1
−60
(dB)
PROBABILITY (%)
10
0.1
−70
−80
0.01
−90
−110
−ACPR @
+ACPR @
3.84 MHz BW 3.84 MHz BW
−IM3 @
3.84 MHz BW
−120
−25
−20
−100
0.001
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 @
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21130HR3 MRF5S21130HSR3
6
RF Device Data
Freescale Semiconductor
f = 2200 MHz
f = 2080 MHz
Zload
Zo = 25 Ω
f = 2080 MHz
f = 2200 MHz
Zsource
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
2.87 - j9.49
1.51 - j2.97
2110
3.13 - j9.86
1.52 - j2.54
2140
4.05 - j10.90
1.59 - j2.68
2170
4.80 - j11.75
1.62 - j2.70
2200
5.55 - j11.87
1.54 - j3.13
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF5S21130HR3 MRF5S21130HSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S21130HR3 MRF5S21130HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
(INSULATOR)
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
(LID)
M
(INSULATOR)
B
M
H
C
E
T
A
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
SEATING
PLANE
(FLANGE)
CASE 465B - 03
ISSUE B
NI - 880
MRF5S21130HR3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
2
bbb
M
D
T A
M
bbb
M
T A
M
B
ccc
M
T A
M
B
B
M
M
(INSULATOR)
M
N
R
ccc
M
T A
M
aaa
M
T A
M
S
(LID)
M
B
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE A
NI - 880S
MRF5S21130HSR3
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
11
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 Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF5S21130HR3 MRF5S21130HSR3
Document Number: MRF5S21130H
Rev. 2, 1/2005
12
RF Device Data
Freescale Semiconductor