Freescale Semiconductor Technical Data MRF5S21130H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 13.5 dB Efficiency — 26% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S21130HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S21130HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 372 2.13 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C CW 92 W Symbol Value (1,2) Unit CW Operation Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 92 W CW Case Temperature 76°C, 28 W CW RθJC 0.44 0.47 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MRF5S21130HR3 MRF5S21130HSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M4 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) — 3.7 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) — 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 7.5 — S Crss — 2.6 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 12 13.5 — dB Drain Efficiency ηD 24 26 — % Intermodulation Distortion IM3 - 37 - 35 dBc Adjacent Channel Power Ratio Input Return Loss ACPR — - 39 - 37 dBc IRL — - 12 -9 dB 1. Part is internally matched both on input and output. MRF5S21130HR3 MRF5S21130HSR3 2 RF Device Data Freescale Semiconductor R1 VBIAS + C13 C11 + C1 R2 C3 + C15 + C20 VSUPPLY C9 C5 Z9 Z7 RF INPUT Z1 Z2 C7 Z3 Z4 DUT Z8 Z11 C18 Z12 Z13 Z14 Z15 Z16 RF OUTPUT Z5 C17 Z10 C8 C19 Z6 C10 C6 + C2 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 + C14 C12 + C16 C4 0.500″ x 0.083″ Microstrip 0.995″ x 0.083″ Microstrip 0.905″ x 0.083″ Microstrip 0.159″ x 1.024″ Microstrip 0.117″ x 1.024″ Microstrip 0.749″ x 0.083″ Microstrip 0.117″ x 1.000″ Microstrip Z9, Z10 Z11 Z12 Z13 Z14, Z15 Z16 PCB 0.709″ x 0.083″ Microstrip 0.415″ x 1.000″ Microstrip 0.531″ x 0.083″ Microstrip 0.994″ x 0.083″ Microstrip 0.070″ x 0.220″ Microstrip 0.430″ x 0.083″ Microstrip Taconic TLX8, 0.030″, εr = 2.55 Figure 1. MRF5S21130HR3(SR3) Test Circuit Schematic Table 5. MRF5S21130HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C13, C14, C15, C16 10 µF, 35 V Tantalum Capacitors 293D1106X9035D Vishay - Sprague C3, C4, C11, C12 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay - Vitramon C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C8 0.1 pF 100B Chip Capacitor 100B0R1BW ATC C17 0.5 pF 100B Chip Capacitor 100B0R5BW ATC C20 220 µF, 63 V Electrolytic Capacitor, Radial 13668221 Philips R1, R2 1 kW, 1/4 W Chip Resistors MRF5S21130HR3 MRF5S21130HSR3 RF Device Data Freescale Semiconductor 3 C1 C9 C3 C11 C20 C13 C15 R1 R2 CUT OUT AREA C7 C5 C8 C18 C17 C19 C6 C2 C4 C10 C12 C14 C16 MRF5S21130 Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S21130HR3(SR3) Test Circuit Component Layout MRF5S21130HR3 MRF5S21130HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 14 12 25 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 11 10 IRL 20 −28 9 −32 IM3 8 7 −36 ACPR 6 2060 −40 2080 2100 2120 2140 2160 2180 2200 −10 −44 2220 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 30 ηD IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 13 ηD, DRAIN EFFICIENCY (%) 35 Gps f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance −25 IDQ = 1600 mA G ps , POWER GAIN (dB) 14.5 1400 mA 14 1200 mA 13.5 1000 mA 800 mA 13 12.5 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing 11.5 11 1 10 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 15 −30 −35 IDQ = 1600 mA −40 1400 mA 1200 mA −45 −50 800 mA 1000 mA −60 −65 1000 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 1000 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power −25 57 3rd Order −30 Ideal Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurement, 10 MHz Tone Spacing −55 −35 −40 5th Order −45 7th Order −50 −55 55 P3dB = 52.58 dBm (181.1 W) P1dB = 51.88 dBm (154.17 W) 53 Actual 51 49 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 5 µsec(on), 1 msec(off) Center Frequency = 2140 MHz VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two−Tone Measurements, Center Frequency = 2140 MHz −60 0.1 1 10 100 47 33 34 35 36 37 38 39 40 41 42 43 44 45 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 46 MRF5S21130HR3 MRF5S21130HSR3 RF Device Data Freescale Semiconductor 5 35 109 −20 ηD VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 30 25 −25 −30 IM3 ACPR 20 −35 Gps 15 −40 10 −45 5 −50 0 5 10 15 20 25 30 35 40 −55 45 IM3 (dBc), ACPR (dBc) MTTF FACTOR (HOURS x AMPS 2 ) ηD, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS 108 107 106 100 120 Pout, OUTPUT POWER (WATTS) AVG. (W−CDMA) 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) Figure 8. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature TYPICAL CHARACTERISTICS W - CDMA TEST SIGNAL −20 100 3.84 MHz Channel BW −30 −40 −50 1 −60 (dB) PROBABILITY (%) 10 0.1 −70 −80 0.01 −90 −110 −ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW −IM3 @ 3.84 MHz BW −120 −25 −20 −100 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal −15 −10 −5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 11. 2-Carrier W-CDMA Spectrum MRF5S21130HR3 MRF5S21130HSR3 6 RF Device Data Freescale Semiconductor f = 2200 MHz f = 2080 MHz Zload Zo = 25 Ω f = 2080 MHz f = 2200 MHz Zsource VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz Zsource Ω Zload Ω 2080 2.87 - j9.49 1.51 - j2.97 2110 3.13 - j9.86 1.52 - j2.54 2140 4.05 - j10.90 1.59 - j2.68 2170 4.80 - j11.75 1.62 - j2.70 2200 5.55 - j11.87 1.54 - j3.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S21130HR3 MRF5S21130HSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF5S21130HR3 MRF5S21130HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF5S21130HR3 MRF5S21130HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF5S21130HR3 MRF5S21130HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) 3 K 2 bbb M D T A B M M (INSULATOR) M bbb M T A M B M ccc M T A M B M N R ccc M T A M B S (LID) aaa M T A M (LID) M (INSULATOR) B M H C E T A INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F A DIM A B C D E F G H K M N Q R S aaa bbb ccc SEATING PLANE (FLANGE) CASE 465B - 03 ISSUE B NI - 880 MRF5S21130HR3 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) K 2 bbb M D T A M bbb M T A M B ccc M T A M B B M M (INSULATOR) M N R ccc M T A M aaa M T A M S (LID) M B B (LID) M (INSULATOR) M H DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE C F E T A A (FLANGE) SEATING PLANE CASE 465C - 02 ISSUE A NI - 880S MRF5S21130HSR3 MRF5S21130HR3 MRF5S21130HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF5S21130HR3 MRF5S21130HSR3 Document Number: MRF5S21130H Rev. 2, 1/2005 12 RF Device Data Freescale Semiconductor