Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.4 dB Drain Efficiency — 23.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40.5 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2300 - 2400 MHz, 20 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S23100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S23100HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 330 1.9 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 20 W CW RθJC 0.53 0.59 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S23100HR3 MRF6S23100HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 3A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc gfs — 5.3 — S Crss — 1.5 — pF Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14 15.4 17 dB Drain Efficiency ηD 22.5 23.5 — % Intermodulation Distortion IM3 - 35 - 37 — dBc ACPR - 38 - 40.5 — dBc IRL — - 10 — dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S23100HR3 MRF6S23100HSR3 2 RF Device Data Freescale Semiconductor B1 VSUPPLY R1 + VBIAS + + C6 C5 C8 C4 C3 Z11 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 C9 C10 C11 C2 Z8 Z9 C1 Z12 Z13 Z10 Z14 C12 RF OUTPUT C7 DUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 0.725″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip 0.110″ x 0.240″ Microstrip 0.140″ x 0.080″ Microstrip 0.167″ x 0.500″ Microstrip 0.130″ x 0.080″ Microstrip 0.250″ x 0.611″ Microstrip 0.060″ x 0.080″ Microstrip Z9 Z10 Z11 Z12 Z13 Z14 PCB 0.329″ x 0.756″ Microstrip 0.083″ x 0.756″ Microstrip 0.092″ x 0.800″ Microstrip 0.436″ x 0.800″ Microstrip 0.974″ x 0.080″ Microstrip 0.727″ x 0.080″ Microstrip Arlon GX - 0300 - 5022, 0.030″, εr = 2.5 Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair - Rite C1, C2, C7, C8 5.6 pF Chip Capacitors, B Case 100B5R6CP500X ATC C3 0.01 μF Chip Capacitor (1825) C1825C103J1RAC Kemet C4, C9 2.2 μF, 50 V Chip Capacitors (1825) C1825C225J5RAC Kemet C5 22 μF, 25 V Tantalum Capacitor ECS - T1ED226R Panasonic TE series C6 47 μF, 16 V Tantalum Capacitor T491D476K016AS Kemet C10, C11 10 μF, 50 V Chip Capacitors (2220) GRM55DR61H106KA88B Murata C12 330 μF, 63 V Electrolytic Capacitor NACZF331M63V Nippon R1 10 Ω, 1/8 W Chip Resistor (1206) CRC120610R0F100 Dale/Vishay MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 3 C4 C3 C2 C8 C9 C10 R1 B1 C6 C11 C5 C12 C7 CUT OUT AREA C1 MRF6S23100 Rev 2.0 Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout MRF6S23100HR3 MRF6S23100HSR3 4 RF Device Data Freescale Semiconductor VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 1000 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing Gps, POWER GAIN (dB) 15.8 24.8 24.2 15.6 15.4 23.6 Gps 3.84 MHz Channel Bandwidth −35 PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −37 15.2 15 14.8 −39 IRL ACPR −41 14.6 −43 14.4 2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400 −12 −15 −18 −21 −24 IRL, INPUT RETURN LOSS (dB) 25.4 ηD IM3 (dBc), ACPR (dBc) 16 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts Avg. Gps, POWER GAIN (dB) 35 34.5 15 34 14.9 14.8 35.5 Gps 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 14.7 14.6 −25 −27 IM3 14.5 −29 −31 14.4 ACPR 14.3 −33 IRL 14.2 −35 2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400 −12 −14 −16 −18 −20 −22 IRL, INPUT RETURN LOSS (dB) 15.1 35.5 VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1000 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing ηD, DRAIN EFFICIENCY (%) ηD IM3 (dBc), ACPR (dBc) 15.2 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 40 Watts Avg. 18 Gps, POWER GAIN (dB) 17 1250 mA 16 15 1000 mA 750 mA 14 13 12 0.1 500 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 0 VDD = 28 Vdc, f1 = 2345 MHz f2 = 2355 MHz, Two−Tone Measurements 10 MHz Tone Spacing IDQ = 1500 mA −10 VDD = 28 Vdc f1 = 2345 MHz, f2 = 2355 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 1500 mA −30 IDQ = 500 mA −40 1250 mA −50 1000 mA 750 mA −60 −70 1 10 100 300 0.1 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 5 −15 57 −20 −25 Pout, OUTPUT POWER (dBm) VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz 3rd Order −30 −35 −40 5th Order −45 7th Order Ideal 55 P3dB = 51.88 dBm (154.14 W) 53 P1dB = 51.18 dBm (131.19 W) Actual 51 VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2350 MHz 49 −50 −55 0.1 47 1 32 100 10 33 34 35 36 37 38 40 39 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 35 −20 VDD = 28 Vdc, IDQ = 1000 mA ηD f1 = 2345 MHz, f2 = 2355 MHz TC = 25_C 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 30 25 IM3 −25 −30_C 85_C −30 20 −35 Gps 25_C 25_C −40 15 −30_C 10 −45 85_C 5 −50 25_C ACPR IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 0 −55 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 18 60 −30_C Gps 16 25_C 25_C 50 15 85_C 85_C 14 13 40 30 VDD = 28 Vdc IDQ = 1000 mA f = 2350 MHz 20 ηD 14 13 10 11 0.1 0 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power 24 V 20 V 12 10 28 V 12 11 1 IDQ = 1000 mA f = 2350 MHz 15 Gps, POWER GAIN (dB) TC = −30_C ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 17 16 70 32 V VDD = 12 V 16 V 0 20 40 60 80 100 120 140 160 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6S23100HR3 MRF6S23100HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 109 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 −20 −30 −40 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 −50 −60 −70 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 7 f = 2300 MHz f = 2400 MHz Zsource Zload f = 2400 MHz f = 2300 MHz Zo = 25 Ω VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg. f MHz Zsource Ω Zload Ω 2.06 - j4.69 2300 12.20 - j6.20 2310 12.06 - j6.40 2.04 - j4.62 2320 11.91 - j6.56 2.02 - j4.55 2330 11.76 - j6.71 2.01 - j4.48 2340 11.60 - j6.86 1.99 - j4.42 2350 11.44 - j7.00 1.97 - j4.35 2360 11.27 - j7.13 1.96 - j4.28 2370 11.10 - j7.22 1.94 - j4.22 2380 10.92 - j7.34 1.93 - j4.15 2390 10.73 - j7.46 1.91 - j4.09 2400 10.55 - j7.53 1.90 - j4.02 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S23100HR3 MRF6S23100HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF6S23100HR3 MRF6S23100HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M R (INSULATOR) bbb N M T A M B M ccc M T A M M aaa M T A M ccc H B S (LID) M T A M B (LID) M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF6S23100HR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 2X 2 B (FLANGE) K D bbb M T A B M N M ccc M R (LID) M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF6S23100HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S23100HR3 MRF6S23100HSR3 Document Number: MRF6S23100H Rev. 1, 5/2006 12 RF Device Data Freescale Semiconductor