FREESCALE MRF7P20040HSR3

Freescale Semiconductor
Technical Data
Document Number: MRF7P20040H
Rev. 1, 8/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7P20040HR3
MRF7P20040HSR3
Designed for CDMA base station applications with frequencies from 2010 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single - Carrier W - CDMA Performance: VDD = 32 Volts,
IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 Watts Avg., Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz
18.2
42.6
7.3
- 34.8
2010 - 2025 MHz, 10 W AVG., 32 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ] 50 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465M - 01, STYLE 1
NI - 780 - 4
MRF7P20040HR3
CASE 465H - 02, STYLE 1
NI - 780S - 4
MRF7P20040HSR3
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/
Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 82°C, Pout = 40 W CW
32 Vdc, IDQA = 150 mA
32 Vdc, VGSB = 1.5 Vdc
Case Temperature 78°C, Pout = 10 W CW
32 Vdc, IDQA = 150 mA
32 Vdc, VGSB = 1.5 Vdc
Unit
RθJC
°C/W
2.3
2.3
2.5
2.9
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 33.5 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 32 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 0.325 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Off Characteristics
(3)
On Characteristics (3)
Functional Tests (4,5) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.,
f = 2025 MHz, Single - Carrier W - CDMA, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16
18.2
21
dB
Drain Efficiency
ηD
39
42.6
—
%
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
6.9
7.3
—
dB
ACPR
—
- 34.8
- 30
dBc
IRL
—
- 17.8
- 10
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/
Application Notes - AN1955.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
5. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
MRF7P20040HR3 MRF7P20040HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Typical Performance
(In Freescale Doherty Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc,
2010 - 2025 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
35
—
W
Pout @ 3 dB Compression Point, CW
P3dB
—
50
—
W
—
8
—
IMD Symmetry @ 15 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 15 MHz Bandwidth @ Pout = 10 W Avg.
GF
—
0.04
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.013
—
dB/°C
ΔP1dB
—
0.006
—
dBm/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
1. Measurement made with device in a Symmetrical Doherty configuration.
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
3
VGGA
VDSA
C13
C11
R2
C15
C17
C7
C5
C
C9
P
C10
C1 C3
C2 C4
C6
CUT OUT AREA
R1
C19
C8
C12
C16
C18
R3
C14
MRF7P20040H/HS
Rev. 1
VDSB
VGGB
Figure 2. MRF7P20040HR3(HSR3) Test Circuit Component Layout
Table 5. MRF7P20040HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C9, C10
12 pF Chip Capacitors
ATC600F120FT250XT
ATC
C3, C4
2.4 pF Chip Capacitors
ATC600F2R4AT250XT
ATC
C5, C6
27 pF Chip Capacitors
ATC600F270FT250XT
ATC
C7, C8
1.1 pF Chip Capacitors
ATC600F1R1AT250XT
ATC
C11, C12
12 pF Chip Capacitors
ATC100B120FT1500XT
ATC
C13, C14
2.2 μF, 50 V Chip Capacitors
C3225X7R1H225KT
TDK
C15, C16
4.7 μF, 50 V Chip Capacitors
GRM43ER61H475MA88L
Murata
C17, C18
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C19
0.8 pF Chip Capacitor
ATC600F0R8AT250XT
ATC
R1
100 Ω, 1/4 W Chip Resistor
CRCW12061000FKEA
Vishay
R2, R3
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
PCB
0.020″, εr = 3.5
RO4350B
Rogers
MRF7P20040HR3 MRF7P20040HSR3
4
RF Device Data
Freescale Semiconductor
Single−ended
l
4
l
4
l
2
Quadrature combined
l
4
Doherty
l
2
Push−pull
Figure 3. Possible Circuit Topologies
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
5
46
17
42
40
ηD
16.5
44
Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
16 ACPR
15.5
15
−28
−14
−30
−16
−32
PARC
14.5
38
−34
−36
14
13.5
1880
IRL
1900
1920
1940
1960
1980
2000
2020
−18
−20
−22
−38
2040
−24
−1.8
−2
−2.2
−2.4
PARC (dB)
Gps, POWER GAIN (dB)
17.5
Gps
IRL, INPUT RETURN LOSS (dB)
VDD = 32 Vdc, Pout = 10 W (Avg.)
IDQA = 150 mA, VGSB = 1.5 Vdc
18
ACPR (dBc)
18.5
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−2.6
−2.8
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 10 Watts Avg.
−10
VDD = 32 Vdc, Pout = 15 W (PEP), IDQA = 150 mA
VGSB = 1.5 Vdc, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2017.5 MHz
−20
IM3−L
−30
IM3−U
−40
IM5−U
IM5−L
−50
IM7−U
IM7−L
−60
10
1
100
TWO−TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two - Tone Spacing
ηD
Gps, POWER GAIN (dB)
18
17.5
17
16.5
16
15.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps
0
48
−26
44
−28
−2 dB = 7.64 W
−1
40
ACPR
−1 dB = 5.48 W
−2
36
−3 dB = 10.07 W
−3
32
VDD = 32 Vdc, IDQA = 150 mA
PARC
VGSB = 1.5 Vdc, f = 2017.5 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
−4
−5
3
6
9
12
−30
−32
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
18.5
−34
28
−36
24
−38
15
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MRF7P20040HR3 MRF7P20040HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
2017.5 MHz
2010 MHz
Gps, POWER GAIN (dB)
18
17.5 VDD = 32 Vdc, IDQA = 150 mA
VGSB = 1.5 Vdc, Single−Carrier
17 W−CDMA, 3.84 MHz Channel
16.5 Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
16 Probability on CCDF
15.5
15
0
55
−5
50
−10
45
40
ηD
35
30
Gps
25
2025 MHz
20
2017.5 MHz
2010 MHz
ACPR
14.5
2025 MHz
60
14
1
10
−15
−20
−25
−30
ACPR (dBc)
f = 2010 MHz 2025 MHz 2017.5 MHz
18.5
ηD, DRAIN EFFICIENCY (%)
19
−35
−40
15
−45
10
−50
50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
−4
20
−10
Gain
12
−16
8
−22
4
−4
1450
−28
IRL
VDD = 32 Vdc
Pin = 0 dBm
IDQA = 150 mA
VGSB = 1.5 Vdc
0
1575
1700
1825
1950
IRL (dB)
GAIN (dB)
16
−34
2075
2200
2325
−40
2450
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
7
W - CDMA TEST SIGNAL
100
10
0
−10
3.84 MHz
Channel BW
−20
1
Input Signal
−30
0.1
(dB)
PROBABILITY (%)
10
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−40
−50
−60
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−70
−80
8
10
PEAK−TO−AVERAGE (dB)
Figure 9. CCDF W - CDMA IQ Magnitude
Clipping, Single - Carrier Test Signal
12
−90
−100
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single - Carrier W - CDMA Spectrum
MRF7P20040HR3 MRF7P20040HSR3
8
RF Device Data
Freescale Semiconductor
VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.
f
MHz
Zsource
W
Zload
W
1995
6.80 - j13.11
14.67 + j4.09
2000
6.66 - j13.03
14.87+ j3.82
2005
6.52 - j12.93
15.08 + j3.58
2010
6.37 - j12.85
15.27 + j3.29
2015
6.22 - j12.78
15.45 + j3.00
2020
6.08 - j12.69
15.62 + j2.77
2025
5.94 - j12.60
15.80 + j2.44
2030
5.80 - j12.49
15.95 + j2.14
2035
5.65 - j12.40
16.08 + j1.82
Note: Measured with Peaking side open.
Zload
= Test circuit impedance as measured from
drain to ground.
Zsource = Test circuit impedance as measured from
gate to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 11. Series Equivalent Source and Load Impedance — Carrier Side
VDD = 32 Vdc, IDQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 W Avg.
f
MHz
Zsource
W
Zload
W
1995
8.45 - j12.85
5.83 - j10.09
2000
8.28 - j12.79
5.57 - j10.11
2005
8.11 - j12.70
5.32 - j10.08
2010
7.95 - j12.63
5.06 - j10.07
2015
7.79 - j12.56
4.80 - j10.06
2020
7.63 - j12.48
4.55 - j10.01
2025
7.50 - j12.40
4.32 - j9.96
2030
7.34 - j12.32
4.06 - j9.88
2035
7.19 - j12.24
3.82 - j9.81
Note: Measured with Carrier side open.
Zload
= Test circuit impedance as measured from
drain to ground.
Zsource = Test circuit impedance as measured from
gate to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance — Peaking Side
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 32 Vdc, IDQA = 150 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle
49
Pout, OUTPUT POWER (dBm)
48
Ideal
f = 2010 MHz
47
46
f = 2010 MHz
45
Actual
44
f = 2025 MHz
43
42
41
f = 2025 MHz
40
39
17
18
19
21
20
22
23
25
24
26
27
Pin, INPUT POWER (dBm)
Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 32 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
2010
26
44.1
31
44.9
2025
26
44.2
31
44.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
2010
P1dB
2.49 - j18.56
15.82 - j0.28
2025
P1dB
2.66 - j19.78
15.78 + j0.52
Figure 13. Pulsed CW Output Power
versus Input Power @ 32 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF7P20040HR3 MRF7P20040HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
11
MRF7P20040HR3 MRF7P20040HSR3
12
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
13
MRF7P20040HR3 MRF7P20040HSR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2009
• Initial Release of Data Sheet
1
Aug. 2009
• Removed IQ Magnitude Clipping from Typical Performance bullet, p. 1 and Functional Test header, p. 2
• Electrical Characteristics, DC tests: updated footnote to indicate each side of device measured
separately, p. 2
MRF7P20040HR3 MRF7P20040HSR3
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140
Fax: +1 - 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2009. All rights reserved.
MRF7P20040HR3 MRF7P20040HSR3
Document Number: MRF7P20040H
Rev. 1, 8/2009
16
RF Device Data
Freescale Semiconductor