FREESCALE MW7IC915NT1

Freescale Semiconductor
Technical Data
Document Number: MW7IC915N
Rev. 0, 9/2009
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC915N wideband integrated circuit is designed with on - chip
matching that makes it usable from 698 to 960 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Driver Application — 900 MHz
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
865 MHz
37.9
17.1
- 50.4
880 MHz
38.0
17.4
- 50.6
895 MHz
37.8
17.5
- 51.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW
(3 dB Input Overdrive from Rated Pout)
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 30 to 41.5 dBm CW
Pout.
MW7IC915NT1
728 - 960 MHz, 1.6 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 1894 - 01
PQFN 8x8
PLASTIC
• Typical Pout @ 1 dB Compression Point ] 15.5 Watts CW
Driver Application — 700 MHz
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
728 MHz
37.8
17.2
- 49.5
748 MHz
37.8
17.3
- 50.5
768 MHz
37.7
17.3
- 51.4
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC915NT1
1
Quiescent Current
Temperature Compensation (1)
24 23 22 21 20 19
NC
GND
7 8 9 10 11 12
NC
VDS1
RFout/VDS2
RFin
RFin
GND
NC
1
2
3
4
5
6
VDS1
Figure 1. Functional Block Diagram
18
17
16
15
14
13
RFout/VDS2
RFout/VDS2
RFout/VDS2
RFout/VDS2
RFout/VDS2
RFout/VDS2
VDS1
NC
NC
NC
RFin
NC
VGS2
NC
NC
NC
VGS2
VGS1
VGS1
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Tstg
- 65 to +150
°C
Storage Temperature Range
Operating Junction Temperature
(1)
Input Power
TJ
150
°C
Pin
4.7
dBm
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W - CDMA Application
(Case Temperature 82°C, Pout = 1.6 W CW)
RθJC
°C/W
Stage 1, 28 Vdc, IDQ1 = 60 mA
Stage 2, 28 Vdc, IDQ2 = 130 mA
7.5
3.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
150
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MW7IC915NT1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 9 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 52 mAdc)
VGS(Q)
—
3
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 52 mAdc, Measured in Functional Test)
VGG(Q)
5.5
6.3
7
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 36 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 134 mAdc)
VGS(Q)
—
2.9
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 134 mAdc, Measured in Functional Test)
VGG(Q)
3.8
4.6
5.3
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.3
0.8
Vdc
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg.,
f = 880 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
35.0
38.0
41.0
dB
Power Added Efficiency
PAE
15.0
17.4
—
%
- 47 . 0
dBc
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
ACPR
—
- 50.6
IRL
—
- 22
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W
Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
IRL
(dB)
865 MHz
37.9
17.1
- 50.4
- 21
880 MHz
38.0
17.4
- 50.6
- 22
895 MHz
37.8
17.5
- 51.3
- 22
1. Part internally input matched.
(continued)
MW7IC915NT1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, 865 - 895 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ1 = 75 mA, IDQ2 = 100 mA)
P1dB
—
15.5
—
—
45
—
W
IMD Symmetry @ 16 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
180
—
MHz
ΔIQT
—
—
0.10
0.12
—
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1.6 W Avg.
GF
—
0.1
—
dB
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.041
—
dB/°C
ΔP1dB
—
0.004
—
dBm/°C
Quiescent Current Accuracy over Temperature (1)
with 2 kΩ Gate Feed Resistors ( - 30 to 85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Stage 1
Stage 2
MHz
Typical Performance — 700 MHz (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout =
1.6 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
IRL
(dB)
728 MHz
37.8
17.2
- 49.5
- 23
748 MHz
37.8
17.3
- 50.5
- 22
768 MHz
37.7
17.3
- 51.4
- 22
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MW7IC915NT1
4
RF Device Data
Freescale Semiconductor
VG1
VG2
R1
C8
C10 C12
C19
R2
C13 C15
C7
C9
C17
VD2
C11
C2
C1
C3
C4
C5
C6
C14
MW7IC915N
Rev 3
C16
VD1
C18
C20
Figure 3. MW7IC915NT1 Test Circuit Component Layout
Table 6. MW7IC915NT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C2, C5
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C3
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C4
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C6, C11, C12, C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C7, C8
1 μF Chip Capacitors
GRM31MR71H105KA88L
Murata
C9, C10
0.01 μF Chip Capacitors
GRM32MR71H104JA01L
Murata
C15, C16
4.7 μF Chip Capacitors
GRM31CR71H475KA12L
Murata
C17, C18
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C19, C20
100 μF, 50 V Electrolytic Capacitors
MCGPR50V107M8X11 - RH
Multicomp
R1, R2
2 kΩ, 1/4 W Resistors
CRCW12062K00FKEA
Vishay
MW7IC915NT1
RF Device Data
Freescale Semiconductor
5
Gps
38
18
17
37 VDD = 28 Vdc, Pout = 1.6 W (Avg.), IDQ1 = 52 mA
IDQ2 = 134 mA, Single−Carrier W−CDMA, 3.84 MHz
36 Channel Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
35
16
−46
IRL
−47
−48
34
PARC −49
33
ACPR (dBc)
Gps, POWER GAIN (dB)
39
−10
−20
−30
ACPR
32
800
820
840
860
880
900
940
920
−50
980 1000
960
−40
0.5
0
−0.5
PARC (dB)
19
PAE
IRL, INPUT RETURN LOSS (dB)
40
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
−1
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 1.6 Watts Avg.
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
VDD = 28 Vdc, Pout = 16 W (PEP), IDQ1 = 52 mA
IDQ2 = 134 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
IM3−U
IM3−L
IM5−U
IM5−L
IM7−U
IM7−L
10
1
100
200
TWO−TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two - Tone Spacing
38.5
38
37.5
37
0
50
−1 dB = 3.8 W
PARC
−1
40
Gps
−2 dB = 5.2 W
−2
30
−3 dB = 6.9 W
PAE
−3
20
−4
ACPR
10
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0
−5
2
4
6
8
−20
60
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, f = 880 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
−25
−30
−35
ACPR (dBc)
39
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
39.5
1
PAE, POWER ADDED EFFICIENCY (%)
40
−40
−45
−50
10
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MW7IC915NT1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
90
Gps, POWER GAIN (dB)
40
80
39
70
895 MHz
38
Gps
37
36
60
895 MHz 880 MHz 865 MHz
50
880 MHz
880 MHz
895 MHz
35
40
865 MHz
30
ACPR
34
20
PAE
33
−15
PAE, POWER ADDED EFFICIENCY (%)
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Single−Carrier
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
−25
−30
−35
−40
−45
−50
−55
10
10
1
−20
ACPR (dBc)
41
20
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
0
40
−5
20
−10
10
−15
0
−20
VDD = 28 Vdc
Pin = −30 dBm
IDQ1 = 52 mA
IDQ2 = 134 mA
−10
−20
300
IRL (dB)
GAIN (dB)
Gain
30
IRL
−25
600
−30
1200
900
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W - CDMA TEST SIGNAL
100
10
0
−10
3.84 MHz
Channel BW
−20
1
Input Signal
−30
0.1
(dB)
PROBABILITY (%)
10
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
1
2
3
4
5
6
−40
−50
−60
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−70
−80
7
8
9
PEAK−TO−AVERAGE (dB)
Figure 9. CCDF W - CDMA IQ Magnitude
Clipping, Single - Carrier Test Signal
10
−90
−100
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single - Carrier W - CDMA Spectrum
MW7IC915NT1
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg.
f
MHz
Zin
W
Zload
W
820
52.99 - j29.47
7.72 + j13.96
840
49.35 - j27.56
7.34 + j14.74
860
46.67 - j23.60
7.43 + j15.55
880
44.88 - j17.63
7.94 + j16.07
900
43.73 - j10.46
7.98 + j16.74
920
43.12 - j2.75
7.80 + j17.62
940
43.38 + j5.01
8.28 + j18.33
960
44.07 + j12.97
9.07 + j19.04
43.89 + j12.61
9.14 + j20.02
980
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 11. Series Equivalent Input and Load Impedance
MW7IC915NT1
8
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pulsed CW,
10 μsec(on), 10% Duty Cycle
48
47
f = 865 MHz
Ideal
Pout, OUTPUT POWER (dBm)
46
f = 895 MHz
45
44
Actual
43
42
41
f = 895 MHz
f = 865 MHz
f = 880 MHz
40
39
38
f = 880 MHz
37
36
0
2
4
6
8
10
12
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
865
18.1
42.6
22.4
43.5
880
18.5
42.7
22.3
43.5
895
18.5
42.7
22.2
43.5
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
865
P1dB
48.7 + j15.6
6.8 + j6.5
880
P1dB
52.3 + j20.8
6.9 + j6.7
895
P1dB
55.1 + j22.2
7.4 + j6.7
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
MW7IC915NT1
RF Device Data
Freescale Semiconductor
9
VG1
VG2
C9
R1
C16
R2
C12
C8
C1
C14
VD2
C10
C3
C2
C4
C6
C5
C7
C11
MW7IC915N
Rev 3
C13
VD1
C15
C17
Figure 13. MW7IC915NT1 Test Circuit Component Layout — 700 MHz
Table 7. MW7IC915NT1 Test Circuit Component Designations and Values — 700 MHz
Part
Description
Part Number
Manufacturer
C1, C3, C6
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C2
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C4
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C5
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C7, C8, C9, C10, C11
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C12, C13
4.7 μF Chip Capacitors
GRM31CR71H475KA12L
Murata
C14, C15
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C16, C17
100 μF, 50 V Electrolytic Capacitors
MCGPR50V107M8X11 - RH
Multicomp
R1, R2
2 kΩ, 1/4 W Resistors
CRCW12062K00FKEA
Vishay
MW7IC915NT1
10
RF Device Data
Freescale Semiconductor
17
16.5
38.4
VDD = 28 Vdc
38.2 Pout = 1.6 W (Avg.), IDQ1 = 50 mA
IDQ2 = 144 mA, Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 7.5 dB @
38 0.01% Probability on CCDF
PARC
37.8
16
Gps
−49
−50
IRL
37.6
−51
ACPR
37.4
710
720
730
740
750
760
770
780
ACPR (dBc)
Gps, POWER GAIN (dB)
38.6
−52
790
−10
−20
−30
−40
0.5
0
−0.5
PARC (dB)
17.5
PAE
IRL, INPUT RETURN LOSS (dB)
38.8
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 700 MHz
−1
f, FREQUENCY (MHz)
Figure 14. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 1.6 Watts Avg.
90
Gps, POWER GAIN (dB)
40
80
39
70
38
768 MHz 748 MHz
37
60
728 MHz
Gps
36
728 MHz
748 MHz
40
748 MHz
768 MHz
35
50
768 MHz
PAE
30
ACPR
34
20
33
−15
PAE, POWER ADDED EFFICIENCY (%)
VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Single−Carrier
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
10
−25
−30
−35
−40
−45
−50
−55
10
1
−20
ACPR (dBc)
41
20
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single - Carrier W - CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
0
40
30
−10
20
−20
10
−30
0
−10
300
VDD = 28 Vdc
Pin = −30 dBm
IDQ1 = 50 mA
IDQ2 = 144 mA
IRL (dB)
GAIN (dB)
Gain
IRL
−40
600
900
−50
1200
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
MW7IC915NT1
RF Device Data
Freescale Semiconductor
11
VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 W Avg.
f
MHz
Zin
W
Zload
W
710
54.61 - j2.01
9.57 + j6.52
720
55.46 + j0.26
9.95 + j7.04
730
56.75 + j2.12
10.70 + j7.79
740
58.35 + j3.55
11.39 + j8.18
750
60.11 + j4.65
11.41 + j8.07
760
61.83 + j5.22
11.00 + j7.90
770
63.19 + j5.31
10.88 + j7.88
780
64.01 + j4.90
11.41 + j7.87
64.18 + j3.91
12.32 + j7.61
790
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance — 700 MHz
MW7IC915NT1
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC915NT1
RF Device Data
Freescale Semiconductor
13
MW7IC915NT1
14
RF Device Data
Freescale Semiconductor
MW7IC915NT1
RF Device Data
Freescale Semiconductor
15
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Sept. 2009
Description
• Initial Release of Data Sheet
MW7IC915NT1
16
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140
Fax: +1 - 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2009. All rights reserved.
MW7IC915NT1
Document
Number:
RF
Device
Data MW7IC915N
Rev. 0, 9/2009
Freescale
Semiconductor
17