Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 865 MHz 37.9 17.1 - 50.4 880 MHz 38.0 17.4 - 50.6 895 MHz 37.8 17.5 - 51.3 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 30 to 41.5 dBm CW Pout. MW7IC915NT1 728 - 960 MHz, 1.6 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER CASE 1894 - 01 PQFN 8x8 PLASTIC • Typical Pout @ 1 dB Compression Point ] 15.5 Watts CW Driver Application — 700 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 728 MHz 37.8 17.2 - 49.5 748 MHz 37.8 17.3 - 50.5 768 MHz 37.7 17.3 - 51.4 Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MW7IC915NT1 1 Quiescent Current Temperature Compensation (1) 24 23 22 21 20 19 NC GND 7 8 9 10 11 12 NC VDS1 RFout/VDS2 RFin RFin GND NC 1 2 3 4 5 6 VDS1 Figure 1. Functional Block Diagram 18 17 16 15 14 13 RFout/VDS2 RFout/VDS2 RFout/VDS2 RFout/VDS2 RFout/VDS2 RFout/VDS2 VDS1 NC NC NC RFin NC VGS2 NC NC NC VGS2 VGS1 VGS1 Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Tstg - 65 to +150 °C Storage Temperature Range Operating Junction Temperature (1) Input Power TJ 150 °C Pin 4.7 dBm Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case W - CDMA Application (Case Temperature 82°C, Pout = 1.6 W CW) RθJC °C/W Stage 1, 28 Vdc, IDQ1 = 60 mA Stage 2, 28 Vdc, IDQ2 = 130 mA 7.5 3.2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 150 °C 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. MW7IC915NT1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 9 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 52 mAdc) VGS(Q) — 3 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 52 mAdc, Measured in Functional Test) VGG(Q) 5.5 6.3 7 Vdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 36 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 134 mAdc) VGS(Q) — 2.9 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, ID = 134 mAdc, Measured in Functional Test) VGG(Q) 3.8 4.6 5.3 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) 0.1 0.3 0.8 Vdc Stage 1 — Off Characteristics Stage 1 — On Characteristics Stage 2 — Off Characteristics Stage 2 — On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg., f = 880 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 35.0 38.0 41.0 dB Power Added Efficiency PAE 15.0 17.4 — % - 47 . 0 dBc -9 dB Adjacent Channel Power Ratio Input Return Loss ACPR — - 50.6 IRL — - 22 Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) PAE (%) ACPR (dBc) IRL (dB) 865 MHz 37.9 17.1 - 50.4 - 21 880 MHz 38.0 17.4 - 50.6 - 22 895 MHz 37.8 17.5 - 51.3 - 22 1. Part internally input matched. (continued) MW7IC915NT1 RF Device Data Freescale Semiconductor 3 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, 865 - 895 MHz Bandwidth Pout @ 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ1 = 75 mA, IDQ2 = 100 mA) P1dB — 15.5 — — 45 — W IMD Symmetry @ 16 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 180 — MHz ΔIQT — — 0.10 0.12 — — % Gain Flatness in 30 MHz Bandwidth @ Pout = 1.6 W Avg. GF — 0.1 — dB Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.041 — dB/°C ΔP1dB — 0.004 — dBm/°C Quiescent Current Accuracy over Temperature (1) with 2 kΩ Gate Feed Resistors ( - 30 to 85°C) Output Power Variation over Temperature ( - 30°C to +85°C) Stage 1 Stage 2 MHz Typical Performance — 700 MHz (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) PAE (%) ACPR (dBc) IRL (dB) 728 MHz 37.8 17.2 - 49.5 - 23 748 MHz 37.8 17.3 - 50.5 - 22 768 MHz 37.7 17.3 - 51.4 - 22 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. MW7IC915NT1 4 RF Device Data Freescale Semiconductor VG1 VG2 R1 C8 C10 C12 C19 R2 C13 C15 C7 C9 C17 VD2 C11 C2 C1 C3 C4 C5 C6 C14 MW7IC915N Rev 3 C16 VD1 C18 C20 Figure 3. MW7IC915NT1 Test Circuit Component Layout Table 6. MW7IC915NT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.8 pF Chip Capacitor ATC100B1R8BT500XT ATC C2, C5 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC C3 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C4 3.3 pF Chip Capacitor ATC100B3R3CT500XT ATC C6, C11, C12, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C7, C8 1 μF Chip Capacitors GRM31MR71H105KA88L Murata C9, C10 0.01 μF Chip Capacitors GRM32MR71H104JA01L Murata C15, C16 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata C17, C18 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C19, C20 100 μF, 50 V Electrolytic Capacitors MCGPR50V107M8X11 - RH Multicomp R1, R2 2 kΩ, 1/4 W Resistors CRCW12062K00FKEA Vishay MW7IC915NT1 RF Device Data Freescale Semiconductor 5 Gps 38 18 17 37 VDD = 28 Vdc, Pout = 1.6 W (Avg.), IDQ1 = 52 mA IDQ2 = 134 mA, Single−Carrier W−CDMA, 3.84 MHz 36 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 35 16 −46 IRL −47 −48 34 PARC −49 33 ACPR (dBc) Gps, POWER GAIN (dB) 39 −10 −20 −30 ACPR 32 800 820 840 860 880 900 940 920 −50 980 1000 960 −40 0.5 0 −0.5 PARC (dB) 19 PAE IRL, INPUT RETURN LOSS (dB) 40 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS −1 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.6 Watts Avg. −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 VDD = 28 Vdc, Pout = 16 W (PEP), IDQ1 = 52 mA IDQ2 = 134 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz IM3−U IM3−L IM5−U IM5−L IM7−U IM7−L 10 1 100 200 TWO−TONE SPACING (MHz) Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing 38.5 38 37.5 37 0 50 −1 dB = 3.8 W PARC −1 40 Gps −2 dB = 5.2 W −2 30 −3 dB = 6.9 W PAE −3 20 −4 ACPR 10 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 −5 2 4 6 8 −20 60 VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, f = 880 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth −25 −30 −35 ACPR (dBc) 39 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 39.5 1 PAE, POWER ADDED EFFICIENCY (%) 40 −40 −45 −50 10 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MW7IC915NT1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 90 Gps, POWER GAIN (dB) 40 80 39 70 895 MHz 38 Gps 37 36 60 895 MHz 880 MHz 865 MHz 50 880 MHz 880 MHz 895 MHz 35 40 865 MHz 30 ACPR 34 20 PAE 33 −15 PAE, POWER ADDED EFFICIENCY (%) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF −25 −30 −35 −40 −45 −50 −55 10 10 1 −20 ACPR (dBc) 41 20 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power 0 40 −5 20 −10 10 −15 0 −20 VDD = 28 Vdc Pin = −30 dBm IDQ1 = 52 mA IDQ2 = 134 mA −10 −20 300 IRL (dB) GAIN (dB) Gain 30 IRL −25 600 −30 1200 900 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W - CDMA TEST SIGNAL 100 10 0 −10 3.84 MHz Channel BW −20 1 Input Signal −30 0.1 (dB) PROBABILITY (%) 10 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 1 2 3 4 5 6 −40 −50 −60 +ACPR in 3.84 MHz Integrated BW −ACPR in 3.84 MHz Integrated BW −70 −80 7 8 9 PEAK−TO−AVERAGE (dB) Figure 9. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal 10 −90 −100 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single - Carrier W - CDMA Spectrum MW7IC915NT1 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg. f MHz Zin W Zload W 820 52.99 - j29.47 7.72 + j13.96 840 49.35 - j27.56 7.34 + j14.74 860 46.67 - j23.60 7.43 + j15.55 880 44.88 - j17.63 7.94 + j16.07 900 43.73 - j10.46 7.98 + j16.74 920 43.12 - j2.75 7.80 + j17.62 940 43.38 + j5.01 8.28 + j18.33 960 44.07 + j12.97 9.07 + j19.04 43.89 + j12.61 9.14 + j20.02 980 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 11. Series Equivalent Input and Load Impedance MW7IC915NT1 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 48 47 f = 865 MHz Ideal Pout, OUTPUT POWER (dBm) 46 f = 895 MHz 45 44 Actual 43 42 41 f = 895 MHz f = 865 MHz f = 880 MHz 40 39 38 f = 880 MHz 37 36 0 2 4 6 8 10 12 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 865 18.1 42.6 22.4 43.5 880 18.5 42.7 22.3 43.5 895 18.5 42.7 22.2 43.5 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 865 P1dB 48.7 + j15.6 6.8 + j6.5 880 P1dB 52.3 + j20.8 6.9 + j6.7 895 P1dB 55.1 + j22.2 7.4 + j6.7 Figure 12. Pulsed CW Output Power versus Input Power @ 28 V MW7IC915NT1 RF Device Data Freescale Semiconductor 9 VG1 VG2 C9 R1 C16 R2 C12 C8 C1 C14 VD2 C10 C3 C2 C4 C6 C5 C7 C11 MW7IC915N Rev 3 C13 VD1 C15 C17 Figure 13. MW7IC915NT1 Test Circuit Component Layout — 700 MHz Table 7. MW7IC915NT1 Test Circuit Component Designations and Values — 700 MHz Part Description Part Number Manufacturer C1, C3, C6 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC C2 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C4 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C5 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C7, C8, C9, C10, C11 47 pF Chip Capacitors ATC100B470JT500XT ATC C12, C13 4.7 μF Chip Capacitors GRM31CR71H475KA12L Murata C14, C15 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C16, C17 100 μF, 50 V Electrolytic Capacitors MCGPR50V107M8X11 - RH Multicomp R1, R2 2 kΩ, 1/4 W Resistors CRCW12062K00FKEA Vishay MW7IC915NT1 10 RF Device Data Freescale Semiconductor 17 16.5 38.4 VDD = 28 Vdc 38.2 Pout = 1.6 W (Avg.), IDQ1 = 50 mA IDQ2 = 144 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 38 0.01% Probability on CCDF PARC 37.8 16 Gps −49 −50 IRL 37.6 −51 ACPR 37.4 710 720 730 740 750 760 770 780 ACPR (dBc) Gps, POWER GAIN (dB) 38.6 −52 790 −10 −20 −30 −40 0.5 0 −0.5 PARC (dB) 17.5 PAE IRL, INPUT RETURN LOSS (dB) 38.8 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — 700 MHz −1 f, FREQUENCY (MHz) Figure 14. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.6 Watts Avg. 90 Gps, POWER GAIN (dB) 40 80 39 70 38 768 MHz 748 MHz 37 60 728 MHz Gps 36 728 MHz 748 MHz 40 748 MHz 768 MHz 35 50 768 MHz PAE 30 ACPR 34 20 33 −15 PAE, POWER ADDED EFFICIENCY (%) VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 −25 −30 −35 −40 −45 −50 −55 10 1 −20 ACPR (dBc) 41 20 Pout, OUTPUT POWER (WATTS) AVG. Figure 15. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power 0 40 30 −10 20 −20 10 −30 0 −10 300 VDD = 28 Vdc Pin = −30 dBm IDQ1 = 50 mA IDQ2 = 144 mA IRL (dB) GAIN (dB) Gain IRL −40 600 900 −50 1200 f, FREQUENCY (MHz) Figure 16. Broadband Frequency Response MW7IC915NT1 RF Device Data Freescale Semiconductor 11 VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 W Avg. f MHz Zin W Zload W 710 54.61 - j2.01 9.57 + j6.52 720 55.46 + j0.26 9.95 + j7.04 730 56.75 + j2.12 10.70 + j7.79 740 58.35 + j3.55 11.39 + j8.18 750 60.11 + j4.65 11.41 + j8.07 760 61.83 + j5.22 11.00 + j7.90 770 63.19 + j5.31 10.88 + j7.88 780 64.01 + j4.90 11.41 + j7.87 64.18 + j3.91 12.32 + j7.61 790 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 17. Series Equivalent Input and Load Impedance — 700 MHz MW7IC915NT1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC915NT1 RF Device Data Freescale Semiconductor 13 MW7IC915NT1 14 RF Device Data Freescale Semiconductor MW7IC915NT1 RF Device Data Freescale Semiconductor 15 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Sept. 2009 Description • Initial Release of Data Sheet MW7IC915NT1 16 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MW7IC915NT1 Document Number: RF Device Data MW7IC915N Rev. 0, 9/2009 Freescale Semiconductor 17