Freescale Semiconductor Technical Data Document Number: MW7IC2220N Rev. 1, 1/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on - chip matching that makes it usable from 2000 to 2200 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 13% ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW Output Power • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 Watts CW Pout. • Typical Pout @ 1 dB Compression Point ' 20 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation (1) VGS2 VDS1 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2110 - 2170 MHz, 2 W Avg., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC2220NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC2220GNR1 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC2220NBR1 GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/VDS2 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2008 - 2009. All rights reserved. RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +5 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Input Power Pin 20 dBm Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 2 W Avg. (Pout = 2 W Avg., Case Temperature = 78°C) 20 W Avg. (Pout = 20 W Avg., Case Temperature = 82°C) RθJC °C/W Stage 1, 28 Vdc, IDQ1 = 80 mA Stage 2, 28 Vdc, IDQ2 = 300 mA 4.3 1.5 Stage 1, 28 Vdc, IDQ1 = 80 mA Stage 2, 28 Vdc, IDQ2 = 300 mA 4.3 1.25 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 80 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1 = 80 mAdc, Measured in Functional Test) VGG(Q) 9.5 12.2 16.5 Vdc Characteristic Stage 1 — Off Characteristics Stage 1 — On Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 300 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2 = 300 mAdc, Measured in Functional Test) VGG(Q) 7 8 12.5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.2 0.39 1.2 Vdc Coss — 205 — pF Characteristic Stage 2 — Off Characteristics Stage 2 — On Characteristics Stage 2 — Dynamic Characteristics (1) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Wideband 2110- 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 W Avg., f1 = 2112.5 MHz and f2 = 2167.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 29 31 34 dB Power Added Efficiency PAE 11 13 — % ACPR — - 50 - 47 dBc IRL — - 14 - 12 dB Adjacent Channel Power Ratio Input Return Loss Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, 2110- 2170 MHz Pout @ 1 dB Compression Point, CW P1dB — 20 — — 40 — W IMD Symmetry @ 18 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 70 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 2 W Avg. GF — 0.6 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 20 W CW Φ — 1.2 — ° Delay — 2.5 — ns Part - to - Part Insertion Phase Variation @ Pout = 20 W CW, f = 2140 MHz, Six Sigma Window ΔΦ — 15 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.036 — dB/°C ΔP1dB — 0.003 — dBm/°C Average Group Delay @ Pout = 20 W CW, f = 2140 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MHz 1. Part internally matched both on input and output. MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 3 + C26 VDD2 1 2 3 4 5 VDD1 C9 RF INPUT Z2 Z1 C10 Z3 NC DUT 16 C16 15 NC NC NC C17 C18 Z8 C13 Z9 C19 C20 Z13 Z4 14 Z5 Z6 C11 Z7 Z10 Z11 Z12 RF OUTPUT 6 C1 VGG1 C2 7 NC 8 9 R1 10 11 NC C14 Z14 Quiescent Current Temperature Compensation 13 12 C21 C3 VGG2 C15 C12 C22 C23 C24 C25 R2 C5 C4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 C6 C7 C8 0.090″ x 0.083″ Microstrip 2.107″ x 0.083″ Microstrip 0.016″ x 0.083″ x 0.055″ Taper 0.106″ x 0.055″ Microstrip 0.570″ x 0.322″ Microstrip 0.204″ x 0.322″ Microstrip 0.050″ x 0.322″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13, Z14 PCB 0.263″ x 0.123″ Microstrip 0.125″ x 0.123″ Microstrip 0.280″ x 0.083″ Microstrip 0.373″ x 0.083″ Microstrip 0.364″ x 0.083″ Microstrip 0.564″ x 0.083″ Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 3. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic Table 6. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 0.1 pF Chip Capacitor ATC100B0R1JT500XT ATC C2, C3 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C4 4.7 μF, 50 V Chip Capacitor C4532X7R1H475KT TDK C5, C6 0.4 pF Chip Capacitors ATC100B0R4JT500XT ATC C7, C9 10 μF, 50 V Chip Capacitors C3225Y5V1H106ZT TDK C8, C10 5.6 pF Chip Capacitors ATC100B5R6JT500XT ATC C11, C12 0.3 pF Chip Capacitors ATC100B0R3JT500XT ATC C13 0.8 pF Chip Capacitor ATC100B0R8JT500XT ATC C14 1.1 pF Chip Capacitor ATC100B1R1JT500XT ATC C15, C16, C21 9.1 pF Chip Capacitors ATC100B9R1JT500XT ATC C17, C22 0.1 μF, 250 V Chip Capacitors C3216X7R2E104KT TDK C18, C23 6.8 μF, 50 V Chip Capacitors C4532X7R1H685KT TDK C19, C24 4.7 μF, 50 V Chip Capacitors C4532X7R1H475KT TDK C20, C25 10 μF, 50 V Chip Capacitors C3225Y5V1H106ZT TDK C26 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois R1, R2 10 KΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 4 RF Device Data Freescale Semiconductor C26 C16 C17 C9 C10 C1 C5 C8 MW7IC2220N Rev. 0 C11 C13 C15 C12 C14 C23 C24 C6 VGG1 C2 R1 CUT OUT AREA C18 C19 C20 C3 R2 C4 C7 C25 C21 C22 Figure 4. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 5 14 VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ1 = 80 mA, IDQ2 = 300 mA 13 Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth 12 30.9 ηD Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF Gps 10 30.5 PARC 30.1 11 IRL −44 −14 −46 −15 29.7 −48 29.3 −50 ACPR 28.9 28.5 2060 2080 −52 2100 2120 2140 2160 2180 −16 −17 −18 −54 2220 2200 −19 0 −0.2 −0.4 −0.6 PARC (dB) Gps, POWER GAIN (dB) 31.7 31.3 IRL, INPUT RETURN LOSS (dB) 32.1 ACPR (dBc) 32.5 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −0.8 −1 f, FREQUENCY (MHz) Gps, POWER GAIN (dB) 31.5 Gps 31 21.5 VDD = 28 Vdc, Pout = 5 W (Avg.), IDQ1 = 80 mA IDQ2 = 300 mA, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30.5 ACPR 30 29.5 IRL 20.5 20 −37 −10 −38 −15 −39 −40 29 PARC −41 28.5 28 2060 21 2080 2100 2120 2140 2160 2180 2200 −42 2220 −20 −25 −30 −35 −0.2 −0.4 −0.6 −0.8 PARC (dB) ηD 32 IRL, INPUT RETURN LOSS (dB) 32.5 22 ACPR (dBc) 33 ηD, DRAIN EFFICIENCY (%) Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 2 Watts Avg. −1 −1.2 f, FREQUENCY (MHz) Figure 6. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 5 Watts Avg. 33 33 IDQ2 = 450 mA 375 mA 31 300 mA 30 29 150 mA 225 mA 28 100 mA 31 80 mA 30 60 mA 29 28 40 mA VDD = 28 Vdc IDQ1 = 80 mA f = 2140 MHz 27 IDQ1 = 120 mA 32 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 32 27 26 VDD = 28 Vdc IDQ2 = 300 mA f = 2140 MHz 26 1 10 50 1 10 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain versus Output Power @ IDQ1 = 80 mA Figure 8. Power Gain versus Output Power @ IDQ2 = 300 mA 50 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 6 RF Device Data Freescale Semiconductor IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −10 VDD = 28 Vdc, Pout = 18 W (PEP), IDQ1 = 80 mA IDQ2 = 300 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −20 −30 IM3−U IM3−L −40 IM5−L IM5−U −50 IM7−L −60 IM7−U −70 10 1 100 TWO−TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing 30 29.5 29 28.5 Gps 0 40 −25 35 −30 PARC −1 30 −1 dB = 6.36 W −2 25 −3 dB = 12.7 W ACPR −2 dB = 9.45 W −3 VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF −4 ηD −5 20 2 4 6 10 8 −35 −40 ACPR (dBc) 30.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 31 1 ηD, DRAIN EFFICIENCY (%) 31.5 −45 15 −50 10 −55 14 12 Pout, OUTPUT POWER (WATTS) 45 −15 −30°C ηD 85°C −20 25°C −25 −30°C −30 ACPR −35 40 Gps 35 TC = −30°C 30 25 25°C 20 85°C 25°C −40 VDD = 28 Vdc, IDQ1 = 80 mA IDQ2 = 300 mA, f = 2140 MHz Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 15 10 5 0 1 10 −45 ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 10. Output Peak - to - Average Ratio Compression (PARC) versus Output Power −50 −55 −60 50 Pout, OUTPUT POWER (WATTS) AVG. Figure 11. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 109 0 36 −5 24 −10 S11 18 −15 12 −20 2nd Stage 108 MTTF (HOURS) 30 S11 (dB) S21 (dB) S21 1st Stage 107 106 VDD = 28 Vdc IDQ1 = 80 mA, IDQ2 = 300 mA 6 1600 1750 1900 2050 2200 2350 2500 2650 105 −25 2800 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) f, FREQUENCY (MHz) Figure 12. Broadband Frequency Response This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 2 W Avg., and PAE = 13%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature W - CDMA TEST SIGNAL 100 −10 3.84 MHz Channel BW −20 10 1 −40 Input Signal −50 0.1 (dB) PROBABILITY (%) −30 0.01 −70 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 −60 −80 −ACPR in 3.84 MHz Integrated BW −90 8 10 −ACPR in 3.84 MHz Integrated BW −100 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 15. Single - Carrier W - CDMA Spectrum MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 8 RF Device Data Freescale Semiconductor Zo = 50 Ω f = 2220 MHz f = 2060 MHz f = 2220 MHz Zload Zin f = 2060 MHz VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 W Avg. f MHz Zin W Zload W 2060 49.57 - j3.62 11.06 - j3.26 2080 49.49 - j3.77 10.83 - j2.96 2100 49.42 - j3.94 10.55 - j2.62 2120 49.35 - j4.12 10.30 - j2.23 2140 49.30 - j4.29 10.08 - j1.86 2160 49.25 - j4.48 9.86 - j1.51 2180 49.21 - j4.67 9.65 - j1.13 2200 49.17 - j4.86 9.45 - j0.76 49.15 - j5.06 9.25 - j0.40 2220 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 16. Series Equivalent Input and Load Impedance MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 9 Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25°C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 1500 0.452 134 0.356 7.81 0.001 - 108 0.979 160 1550 0.407 117 0.757 - 7.8 0.000 - 67.7 0.969 157 1600 0.354 96.5 1.430 - 31 0.000 - 65.8 0.955 154 1650 0.316 85.1 2.330 - 52.1 0.001 - 27.1 0.935 151 1700 0.279 68 3.690 - 73.6 0.001 - 43.4 0.909 148 1750 0.222 49.5 5.800 - 93.3 0.002 - 21.9 0.878 143 1800 0.140 30.4 9.570 - 113 0.003 - 24.8 0.833 137 1850 0.046 21.9 17.000 - 137 0.004 - 33.7 0.737 124 1900 0.094 135 33.600 - 173 0.007 - 41.8 0.476 91.7 1950 0.238 56.4 58.300 124 0.009 - 86.4 0.396 - 79.7 2000 0.254 - 29.2 47.800 59.5 0.006 - 118 0.873 - 149 2050 0.241 - 84.1 34.300 22.9 0.004 - 122 0.927 - 171 2100 0.252 - 120 27.700 - 3.98 0.004 - 125 0.911 - 179 2150 0.201 - 142 23.900 - 28.2 0.003 - 128 0.891 177 2200 0.174 - 162 21.100 - 51.8 0.003 - 130 0.878 175 2250 0.148 168 18.800 - 75.9 0.003 - 131 0.872 175 2300 0.135 103 15.800 - 100 0.003 - 139 0.882 175 2350 0.197 35.4 12.600 - 118 0.003 - 155 0.906 174 2400 0.244 1.73 11.100 - 132 0.002 - 156 0.919 173 2450 0.291 - 11.1 10.400 - 147 0.002 - 157 0.926 171 2500 0.340 - 19 9.750 - 163 0.002 - 147 0.933 170 2550 0.391 - 26.9 9.230 - 179 0.001 - 150 0.938 169 2600 0.435 - 35.2 8.760 164 0.001 - 144 0.942 168 2650 0.475 - 44.4 8.290 146 0.001 - 137 0.945 166 2700 0.455 - 46 7.050 129 0.001 - 90.2 0.950 166 2750 0.535 - 60.2 6.690 112 0.001 - 106 0.955 164 2800 0.571 - 71.2 5.980 95.1 0.001 - 103 0.955 163 2850 0.598 - 82 5.170 78.5 0.002 - 96.5 0.954 162 2900 0.623 - 92.9 4.370 63.1 0.002 - 103 0.955 162 2950 0.643 - 102 3.690 48.7 0.002 - 96.2 0.954 161 3000 0.668 - 109 3.100 35.4 0.002 - 106 0.951 161 3050 0.681 - 116 2.580 22.7 0.002 - 107 0.952 161 3100 0.694 - 121 2.130 11 0.002 - 87.9 0.957 160 3150 0.712 - 124 1.760 - 0.057 0.002 - 96.1 0.959 160 3200 0.724 - 127 1.440 - 10.9 0.002 - 99.6 0.959 160 3250 0.726 - 130 1.170 - 21.1 0.002 - 82.4 0.962 159 3300 0.705 - 130 0.928 - 28.7 0.003 - 66.9 0.963 159 3350 0.743 - 132 0.780 - 37 0.003 - 77.2 0.959 158 3400 0.748 - 135 0.652 - 44.3 0.003 - 88 0.955 157 3450 0.753 - 137 0.555 - 50.3 0.003 - 78.6 0.955 156 (continued) MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 10 RF Device Data Freescale Semiconductor Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25°C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 3500 0.759 - 140 0.486 - 56.1 0.004 - 81.1 0.954 155 3550 0.765 - 144 0.440 - 62.4 0.004 - 82 0.946 154 3600 0.770 - 148 0.401 - 69.7 0.004 - 85.9 0.941 153 3650 0.774 - 153 0.370 - 77.4 0.005 - 96.4 0.941 151 3700 0.780 - 159 0.338 - 85.1 0.006 - 94.9 0.940 150 3750 0.795 - 164 0.306 - 93.2 0.006 - 99.3 0.933 148 3800 0.810 - 170 0.273 - 101 0.008 - 110 0.928 146 3850 0.821 - 175 0.239 - 107 0.008 - 113 0.934 145 3900 0.839 - 178 0.207 - 111 0.008 - 112 0.936 144 3950 0.855 179 0.178 - 114 0.008 - 117 0.927 144 4000 0.862 176 0.156 - 116 0.008 - 123 0.935 144 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 11 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 52 51 51 Ideal P3dB = 46.95 dBm (50 W) Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) 50 49 P1dB = 45.93 dBm (39 W) 48 47 VDD = 28 Vdc, IDQ1 = 90 mA 46 IDQ2 = 420 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle 45 f = 2110 MHz Actual P1dB = 46.99 dBm (50 W) Actual 47 46 45 44 43 42 VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA Pulsed CW, 10 μsec(on), 10% Duty Cycle f = 2170 MHz 41 44 40 7 8 9 10 11 12 13 14 15 16 17 18 19 Ideal P3dB = 48.06 dBm (64 W) 50 49 48 7 8 9 10 11 12 13 14 15 16 17 18 19 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 40.41 + j2.31 3.13 - j4.89 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 2110 MHz P1dB Zsource Ω Zload Ω 44.66 - j5.79 3.06 - j5.22 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 2170 MHz MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 12 RF Device Data Freescale Semiconductor + C23 VDD2 1 2 3 4 5 VDD1 C9 RF INPUT Z2 Z1 C10 Z3 NC DUT 16 C13 15 NC NC NC C14 C15 C16 C17 Z11 Z4 14 Z5 Z6 Z7 Z8 Z9 Z10 RF OUTPUT 6 C12 C1 VGG1 C2 7 NC 8 9 R1 10 11 NC C11 Z12 Quiescent Current Temperature Compensation 13 12 C18 C3 VGG2 C19 C20 C21 C22 R2 C5 C4 Z1 Z2 Z3 Z4 Z5 Z6 C6 C7 C8 0.090″ x 0.083″ Microstrip 2.107″ x 0.083″ Microstrip 0.016″ x 0.083″ x 0.055″ Taper 0.106″ x 0.055″ Microstrip 0.570″ x 0.322″ Microstrip 0.254″ x 0.322″ Microstrip Z7 Z8 Z9 Z10 Z11, Z12 PCB 0.388″ x 0.123″ Microstrip 0.330″ x 0.083″ Microstrip 0.323″ x 0.083″ Microstrip 0.364″ x 0.083″ Microstrip 0.564″ x 0.083″ Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 19. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Schematic — TD - SCDMA Table 8. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — TD - SCDMA Part Description Part Number Manufacturer C1 1 pF Chip Capacitor ATC100B1R0JT500XT ATC C2, C3 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C4 4.7 μF, 50 V Chip Capacitor C4532X7R1H475KT TDK C5, C6 0.4 pF Chip Capacitors ATC100B0R4JT500XT ATC C7, C9 10 μF, 50 V Chip Capacitors C3225Y5V1H106ZT TDK C8, C10 5.6 pF Chip Capacitors ATC100B5R6JT500XT ATC C11 1.1 pF Chip Capacitor ATC100B1R1JT500XT ATC C12, C13, C18 9.1 pF Chip Capacitors ATC100B9R1JT500XT ATC C14, C19 0.1 μF, 250 V Chip Capacitors C3216X7R2E104KT TDK C15, C20 6.8 μF, 50 V Chip Capacitors C4532X7R1H685KT TDK C16, C21 4.7 μF, 50 V Chip Capacitors C4532X7R1H475KT TDK C17, C22 10 μF, 50 V Chip Capacitors C3225Y5V1H106ZT TDK C23 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois R1, R2 11 Ω, 1/4 W Chip Resistors CRCW120611R0FKEA Vishay MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 13 C23 C13 C14 C9 C10 C1 C5 C8 MW7IC2220N Rev. 0 C12 C11 C20 C21 C6 VGG1 C2 R1 CUT OUT AREA C15 C16 C17 C3 R2 C7 C4 C22 C18 C19 Figure 20. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout — TD - SCDMA MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 14 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 30 6−Carrier TD−SCDMA VD1 = VD2 = 28 V IDQ1 = 190 mA, IDQ2 = 300 mA f = 2017.5 MHz PAR = 7.7 dB −20 25 ηD 20 Adj−L Adj−U 15 −30 Alt−L Alt−U −40 10 −50 5 −60 ηD, DRAIN EFFICIENCY (%) ALT/ACPR (dBc) −10 0 0 2 4 6 8 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 21. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD - SCDMA TEST SIGNAL −30 1.28 MHz Channel BW −40 −50 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −60 (dBm) −70 −80 −90 −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset −100 −110 −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz +ALT1 in 1.28 MHz BW +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) Figure 22. 6 - Carrier TD - SCDMA Spectrum MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 15 Zo = 50 Ω f = 1950 MHz Zin f = 2070 MHz f = 2070 MHz f = 1950 MHz Zload VDD = 28 Vdc, IDQ1 = 190 mA, IDQ2 = 300 mA f MHz Zin W Zload W 1950 50 + j0 15.539 - j10.702 1960 50 + j0 14.953 - j10.522 1970 50 + j0 14.373 - j10.327 1980 50 + j0 13.837 - j10.120 1990 50 + j0 13.294 - j9.886 2000 50 + j0 12.768 - j9.608 2010 50 + j0 12.275 - j9.298 2020 50 + j0 11.832 - j9.000 2030 50 + j0 11.422 - j8.708 2040 50 + j0 11.015 - j8.441 2050 50 + j0 10.621 - j8.175 2060 50 + j0 10.235 - j7.916 2070 50 + j0 9.868 - j7.644 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 23. Series Equivalent Input and Load Impedance — TD - SCDMA MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 16 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 17 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 18 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 19 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 20 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 21 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 22 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 23 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 24 RF Device Data Freescale Semiconductor MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 RF Device Data Freescale Semiconductor 25 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2008 • Initial Release of Data Sheet 1 Jan. 2009 • Added Fig. 13, MTTF versus Junction Temperature, p. 8 MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 26 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008 - 2009. All rights reserved. MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1 Document RF DeviceNumber: Data MW7IC2220N Rev. 1, 1/2009 Freescale Semiconductor 27