MITSUBISHI SEMICONDUCTORS <HVIC> M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81713FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ............................................. ±500mA ¡HALF BRIDGE DRIVER ¡SINGLE INPUT TYPE ¡INTERNALLY SET DEADTIME ¡UNDERVOLTAGE LOCKOUT ¡SOP-8 PACKAGE 1. VCC 8. VB 2. IN 7. HO 3. GND 6. VS 4. LO 5. NC NC:NO CONNECTION APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, ACservomotor and general purpose. Outline:8P2S BLOCK DIAGRAM HV LEVEL SHIFT VREG UV DETECT FILTER Ponr INTER LOCK 8 VB 7 HO 6 VS 1 VCC 4 LO 3 GND RQ R S PULSE GEN IN 2 DEAD TIME VREG/VCC LEVEL SHIFT Ponr UV DETECT FILTER DELAY Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO VIN dVS/dt Pd Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Allowable Offset Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Test conditions Ratings –0.5 ~ 624 Unit V V V VB–24 ~ VB+0.5 –0.5 ~ 24 VS–0.5 ~ VB+0.5 VBS = VB–VS V V V V –0.5 ~ 24 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 ±50 0.55 Ta = 25°C, On Board Ta > 25°C, On Board V/ns W mW/°C 5.5 50 –20 ~ 125 –20 ~ 100 °C/W °C °C –40 ~ 125 °C RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO Parameter Test conditions High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage VCC High Side Output Voltage Low Side Fixed Supply Voltage VLO VIN Low Side Output Voltage Logic Input Voltage VB > 10V VBS = VB–VS Min. VS+10 –5 10 VS Limits Typ. — — — Max. VS+20 500 Unit V V 20 VB V V 10 0 — — — 20 VCC V V 0 — VCC V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) Package Power Dissipation Pd (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Temperature Ta (°C) Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol Parameter Test conditions Min. — Limits Typ.* — Max. 1.0 — 0.2 0.5 mA Unit IFS Floating Supply Leakage Current VB = VS = 600V IBS VBS Standby Current IN = 0V ICC VCC Standby Current IN = 0V 0.2 0.5 0.75 mA VOH High Level Output Voltage IO = 0A, LO, HO 13.8 14.4 — V VOL Low Level Output Voltage IO = 0A, LO, HO — — 0.1 V VIH High Level Input Threshold Voltage HIN, LIN 2.1 3.0 4.0 V VIL Low Level Input Threshold Voltage HIN, LIN 0.6 1.5 2.0 V IIH High Level Input Bias Current VIN = 5V — 25 75 µA IIL Low Level Input Bias Current VIN = 0V — — 1 µA VBSuvr VBS Supply UV Reset Voltage 8.0 8.9 9.8 V VBSuvh VBS Supply UV Hysteresis Voltage 0.5 0.7 — V tVBSuv VBS Supply UV Filter Time — 7.5 — µs VCCuvr VCC Supply UV Reset Voltage 8.0 8.9 9.8 V VCCuvh VCC Supply UV Hysteresis Voltage 0.5 0.7 — V tVCCuv VCC Supply UV Filter Time — 7.5 — µs IOH Output High Level Short Circuit Pulsed Current VO = 0V, PW < 10µs — –500 — mA IOL Output Low Level Short Circuit Pulsed Current VO = 15V, PW < 10µs — 500 — mA ROH Output High Level On Resistance IO = –200mA, ROH = (VOH–VO)/IO — 30 — Ω ROL Output Low Level On Resistance IO = 200mA, ROL = VO/IO — 12 — Ω CL = 1000pF between HO-VS, LO-GND 0.5 — 1.00 µs — — 6 V 300 — — ns Dead Time LO Turn-Off to HO Turn-On tDEAD & HO Turn-Off to LO Turn-On µA VPonr Power On Reset Voltage tPonr(FIL) Power On Reset Filter Time tdLH Turn-On Propagation Delay CL = 1000pF between HO-VS, LO-GND 0.6 0.9 1.2 µs tdHL Turn-Off Propagation Delay CL = 1000pF between HO-VS, LO-GND 0.1 0.15 0.2 µs trH High Side Turn-On Rise Time CL = 1000pF between HO-VS — 75 180 ns tfH High Side Turn-Off Fall Time CL = 1000pF between HO-VS — 75 180 ns trL Low Side Turn-On Rise Time CL = 1000pF between LO-GND — 75 180 ns tfL Low Side Turn-Off Fall Time CL = 1000pF between LO-GND — 75 180 ns * Typ. is not specified. INPUT/OUTPUT TIMING DIAGRAM IN 50% 50% tfL trH tfH trL 90% 90% 10% 10% HO 90% 90% LO 10% tdHL tdLH 10% tDEAD tdHL tDEAD tdLH Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER UV SEQUENCE UV RESET UV TRIP UV RESET tVCCuv VCC UV TRIP tVCCuv UV TRIP VPonr UV TRIP UV RESET UV RESET tVBSuv VB UV RESET VPonr UV TRIP VPonr IN HO LO 1.Input/Output Logic: HO has positive logic with reference to IN. LO has negative logic with reference to IN. 2.Logic During UV (VCC, VBS) Error Error Signal UV error (VCC) UV error (VBS) HO LO LO is locked at “L” level as long as UV error for VCC is detected. HO outputs “L” Level as long as UV error for VCC is detected. After V CC exceeds V CC UV reset level, the lock for LO is HO responds to IN if VCC exceeds VCC UV reset level. removed and responds to IN signal. HO is locked at “L” level as long as UV error for VBS is detected. After V BS exceeds VBS UV reset level, the lock for HO is removed following an “L” state of the IN signal, and then LO is independent of VBS to respond to IN. HO responds to the input. * IF UV error for VCC is detected when HO is in “H” level and the falling speed of VCC is exceeds 0.03V/µs, the off signal for HO might not be transmitted from low side to high side and then HO stays “H”. 3.Allowable Supply Voltage Transient It is recommended that supplying VCC firstly and supplying VBS secondly. In the case of shutting off supply voltage, it is recommended to shut off V BS firstly and to shut off VCC secondly. At the time of starting VCC and VBS, power supply should be increased slowly (below 50V/µs). If it is increased rapidly, output signal (HO or LO) may be “H”. Mar. 2006 MITSUBISHI SEMICONDUCTORS <HVIC> M81713FP HIGH VOLTAGE HALF BRIDGE DRIVER Ponr (Power On Reset) SEQUENCE UV RESET UV TRIP UV RESET VCC UV TRIP UV TRIP VPonr tPonr(FIL) UV TRIP VPonr tPonr(FIL) UV TRIP UV RESET UV RESET UV RESET VB UV TRIP VPonr tPonr(FIL) IN HO LO PACKAGE OUTLINE e 8 b2 E Recommended Mount Pad 1 Symbol F 4 A D G b x M A2 e A1 y L L1 HE e1 I2 5 c z Z1 Detail G Detail F A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2 Dimension in Millimeters Min Nom Max – – 1.9 0.05 – – – 1.5 – 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 – 1.27 – 5.9 6.2 6.5 0.2 0.4 0.6 – 0.9 – – 0.595 – – – 0.745 – – 0.25 – – 0.1 0° – 10° – 0.76 – – 5.72 – 1.27 – – Mar. 2006