MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81706AFP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ¡FLOATING SUPPLY VOLTAGE ................................. 600V ¡OUTPUT CURRENT ..................... +120mA/–250mA (min) ¡HALF BRIDGE DRIVER ¡UNDERVOLTAGE LOCKOUT ¡SOP-8 PACKAGE APPLICATIONS MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, ACservomotor and general purpose. 1. VCC 8. VB 2. HIN 7. HO 3. LIN 6. VS 4. GND 5. LO Outline:8P2S BLOCK DIAGRAM HV LEVEL SHIFT VREG HIN 2 3 7 HO 6 VS 1 VCC 5 LO 4 GND R S PULSE GEN UV DETECT FILTER LIN VB RQ INTER LOCK VREG/VCC LEVEL SHIFT 8 UV DETECT FILTER VREG/VCC LEVEL SHIFT DELAY Aug. 2009 1 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO VIN Pd Kq Rth(j-c) Tj Topr Tstg Parameter High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Test conditions Ratings –0.5 ~ 625 Unit V V V VB–25 ~ VB+0.5 –0.5 ~ 25 VS–0.5 ~ VB+0.5 VBS = VB–VS V V V V –0.5 ~ 25 –0.5 ~ VCC+0.5 –0.5 ~ VCC+0.5 0.6 6.0 HIN, LIN Ta = 25°C, On Board Ta > 25°C, On Board W mW/°C °C/W °C °C 50 –20 ~ 125 –20 ~ 100 –40 ~ 125 °C RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO VCC VLO VIN Parameter Test conditions High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage 10 VS VBS = VB–VS High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage Min. VS+10 0 HIN, LIN Limits Typ. — — — 10 0 — — — 0 — Max. VS+20 500 Unit V V 20 VB V V 20 VCC VCC V V V * For proper operation, the device should be used within the recommended conditions. THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) Package Power Dissipation Pd (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Temperature Ta (°C) Aug. 2009 2 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified) Symbol Parameter Test conditions Limits Typ.* — Max. 1.0 0.2 0.5 mA Unit IFS Floating Supply Leakage Current VB = VS = 600V Min. — IBS VBS Standby Current HIN = LIN = 0V — ICC VCC Standby Current HIN = LIN = 0V 0.2 0.5 1.0 mA VOH High Level Output Voltage IO = –20mA, LO, HO 13.6 14.2 — V VOL Low Level Output Voltage IO = 20mA, LO, HO — 0.3 0.6 V VIH High Level Input Threshold Voltage HIN, LIN 2.7 — — V VIL Low Level Input Threshold Voltage HIN, LIN — — 0.8 V IIH High Level Input Bias Current VIN = 5V — 5 20 µA IIL Low Level Input Bias Current VIN = 0V — — 2 µA VBSuvr VBS Supply UV Reset Voltage 8.0 8.9 9.8 V VBSuvt VBS Supply UV Trip Voltage 7.4 8.2 9.0 V VBSuvh VBS Supply UV Hysteresis Voltage 0.5 0.7 — V tVBSuv VBS Supply UV Filter Time — 7.5 — µs VCCuvr VCC Supply UV Reset Voltage 8.0 8.9 9.8 V VCCuvt VCC Supply UV Trip Voltage 7.4 8.2 9.0 V VCCuvh VCC Supply UV Hysteresis Voltage 0.5 0.7 — V tVCCuv VCC Supply UV Filter Time — 7.5 — µs IOH Output High Level Short Circuit Pulsed Current VO = 0V, VIN = 5V, PW < 10µs 120 200 — mA IOL Output Low Level Short Circuit Pulsed Current VO = 15V, VIN = 0V, PW < 10µs 250 350 — mA ROH Output High Level On Resistance IO = –20mA, ROH = (VOH–VO)/IO — 40 70 Ω ROL Output Low Level On Resistance IO = 20mA, ROL = VO/IO — 15 30 Ω tdLH(HO) High Side Turn-On Propagation Delay CL = 1000pF between HO-VS — 120 240 ns tdHL(HO) High Side Turn-Off Propagation Delay CL = 1000pF between HO-VS — 170 280 ns trH High Side Turn-On Rise Time CL = 1000pF between HO-VS — 130 220 ns tfH High Side Turn-Off Fall Time CL = 1000pF between HO-VS — 50 80 ns tdLH(LO) Low Side Turn-On Propagation Delay CL = 1000pF between LO-GND — 120 240 ns tdHL(LO) Low Side Turn-Off Propagation Delay CL = 1000pF between LO-GND — 170 280 ns trL Low Side Turn-On Rise Time CL = 1000pF between LO-GND — 130 220 ns tfL Low Side Turn-Off Fall Time CL = 1000pF between LO-GND — 50 80 ns ∆tdLH Delay Matching, High Side and Low Side Turn-On |tdLH(HO)–tdLH(LO)| — 0 30 ns ∆tdHL Delay Matching, High Side and Low Side Turn-Off |tdHL(HO)–tdHL(LO)| — 0 30 ns µA * Typ. is not specified. Aug. 2009 3 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER FUNCTION TABLE HIN LIN VBS UV VCC UV HO LO H→L H→L L→H L→H X X H→L L→H L H L H L H X X H H H H L L H H H H H H H H L L L L H L L L L L L H L L L H L L Behavioral state LO = HO = Low LO = High HO = High LO = HO = Low HO = Low, VBS UV tripped LO = High, VBS UV tripped LO = Low, VCC UV tripped HO = LO = Low, VCC UV tripped Note1 : “L” state of VBS UV, VCC UV means that UV trip voltage. 2 : In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. 3 : X(HIN) : L→H or H→L.X(LIN) : H or L. 4 : Output signal (HO) is triggered by the edge of input signal. HIN HO TIMING DIAGRAM 1. Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”. HIN LIN HO LO Aug. 2009 4 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER 2. VCC (VBS) Supply Under Voltage Lockout Timing Diagram If VCC supply voltage drops below UV trip voltage (VCCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal becomes “L”. As soon as VCC supply voltage rises over UV reset voltage, output signal LO becomes “H”. VCCuvh VCC VCCuvr VCCuvt tVCCuv LO LIN It VCC supply voltage drops below UV trip voltage (VCCuvt = VCCuvr–VCCuvh) for VCC supply UV filter time, output signal becomes “L”. As soon as VCC supply voltage rises over UV reset voltage, output signal HO becomes “H” it input signal is “H”. VBS(H) LIN(L) VCCuvh VCC VCCuvr VCCuvt tVCCuv HO HIN If VBS supply voltage drops below UV trip voltage (VBSuvt = VBSuvr–VBSuvh) for VBS supply UV filter time, output signal becomes “L”. As soon as VBS supply voltage rises over UV reset voltage, output signal HO becomes “H” at following “H” edge of input signal. VBSuvh VBS VBSuvr VBSuvt tVBSuv HO HIN Aug. 2009 5 MITSUBISHI SEMICONDUCTORS <HVIC> M81706AFP HIGH VOLTAGE HALF BRIDGE DRIVER 3. Allowable Supply Voltage Transient It is recommended to supply VCC firstly and supply VBS secondly. In the case of shutting off supply voltage, please shut off VBS firstly and shut off VCC secondly. When applying VCC and VBS, power supply should be applied slowly. If it rises rapidly, output signal (HO or LO) may be malfunction. Consideration As for this product, the terminal of low voltage part and high-voltage part is very clear (The Fifth: LO, The Sixth: VS). Therefore, pin insulation space distance should be taken enough. PACKAGE OUTLINE e 8 b2 E Recommended Mount Pad 1 Symbol F 4 A D G b x M A1 A2 e y L L1 HE e1 I2 5 c z Z1 Detail G Detail F A A1 A2 b c D E e HE L L1 z Z1 x y b2 e1 I2 Dimension in Millimeters Min Nom Max – – 1.9 0.05 – – – 1.5 – 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 – 1.27 – 5.9 6.2 6.5 0.2 0.4 0.6 – 0.9 – – 0.595 – – – 0.745 – – 0.25 – – 0.1 0° – 10° – 0.76 – – 5.72 – 1.27 – – Aug. 2009 6