MITSUBISHI PS21661-FR

2.10 3rd Generation DIP and Mini-DIP-IPM (Dual-in-line Package Intelligent Power Modules)
Features:
• Employing 5th generation planar IGBT chips with 0.6µm design rule
or CSTBT™ technology with superior loss performance
• Ultra compact dual or single-in-line transfer mold package
(compatible with 2nd generation)
• Including driver and protection circuitry (UV, SC)
• DIP-IPM with reduction of thermal resistance by 20%
• 2500Vrms isolation voltage
• High-active interface logic for direct connection to a 3V or 5V MCU
• Highest reliability and optimised EMI performance
• Available from 3A to 50A / 600V for motor ratings from 0.1kW to 3.7kW
• Optional with open emitter topology for vector control
• All Mitsubishi DIP and Mini-DIP-IPMs have lead-free terminals
• From January 2006 onwards, all DIP and Mini-DIP-IPMs will
be supplied with completely lead-free technology
Line-up DIP, Mini-DIP & SIP-IPM
2.
Type
Isolation Voltage
(V)
Motor Rating (kW)
VCES
(V)
0.1
0.2
0.4
0.75
Super-DIP
DIP
PS21864-P
2500
1.5
2.2
3.7
PS21065
PS21067
PS21069
PS21865-P
PS21867-P
PS21869-P
600
PS21562-P
PS21562-SP*
Mini-DIP
PS21563-P
PS21563-SP*
PS21564-P
PS21564-SP*
PS21661-FR
PS21661-RZ
SIP
* Open Emitter Topology
Thermal & Mechanical
Characteristics
Electrical Characteristics
Type Number
VCES
(V)
Applicable
Motor Ratings
(kW)
IC
(A)
PS21562-P
PS21563-P
PS21564-P
600
600
600
0.2
0.4
0.75
5
10
15
PS21864-P
PS21865-P
PS21867-P
PS21869-P
600
600
600
600
0.75
1.5
2.2
3.7
15
20
30
50
PS21562-SP
PS21563-SP
PS21564-SP
600
600
600
0.2
0.4
0.75
5
10
15
PS21065
PS21067
PS21069
600
600
600
1.5
2.2
3.7
20
30
50
PS21661-RZ/-FR
600
0.1
3
fC
(kHz)
Power Devices General Catalogue 2005
VCE(sat)
@ Tj=25°C
(V)
ton
(µs)
Typical Switching Times
trr
tc(on) toff tc(off)
(µs) (µs) (µs) (µs)
Typ.
Max.
Mini-DIP-IPM 600 Volt
20
2500
1.6
2.1
1.20
0.30 0.40 1.30
20
2500
1.6
2.1
1.20
0.30 0.40 1.40
20
2500
1.45
1.95
1.20
0.30 0.40 1.50
DIP-IPM 600 Volt
20
2500
1.7
2.2
1.50
0.30 0.50 1.40
20
2500
1.6
2.1
1.30
0.30 0.40 1.60
20
2500
1.6
2.1
1.30
0.30 0.40 1.70
20
2500
1.5
2.0
1.30
0.30 0.40 2.00
Mini-DIP-IPM 600 Volt With Open Emitter Topology
20
2500
1.6
2.1
1.20
0.30 0.40 1.30
20
2500
1.6
2.1
1.20
0.30 0.40 1.40
20
2500
1.45
1.95
1.20
0.30 0.40 1.50
Super-DIP-IPM 600 Volt With Open Emitter TopologySIP-IPM 600 Volt
20
2500
1.6
2.1
1.30
0.30 0.40 1.60
20
2500
1.6
2.1
1.30
0.30 0.40 1.70
20
2500
1.5
2.0
1.30
0.30 0.40 2.00
SIP-IPM 600 Volt
15
2500
1.6
2.15
0.85
0.20 0.35 1.00
* Package drawing D6 see under 2.8. 1200V DIP-IPM, p. 50
54
Isolation
Voltage
(V)
IGBT
Rth(j-f)
(°C/W)
Diode
Rth(j-f)
(°C/W)
PackageNo.
0.50
0.50
0.50
6.0
5.0
4.5
6.5
6.5
6.5
D4
D4
D4
0.50
0.50
0.50
0.65
2.30
1.90
1.65
1.42
3.2
3.0
3.0
2.0
D3
D3
D3
D3
0.50
0.50
0.50
6.0
5.0
4.5
6.5
6.5
6.5
D5
D5
D5
0.50
0.50
0.65
1.90
1.65
1.42
2.85
2.55
2.30
D6*
D6*
D6*
0.55
9.0
9.0
SIP1
2.10 3rd Generation DIP and Mini-DIP-IPM
Package D3
Package D4
2.
Package D5
Package SIP1
Dimensions in mm
www.mitsubishichips.com · www. mitsubishielectric.de
55