QFET TM FQB13N50 / FQI13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge. • • • • • • 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V Low gate charge ( typical 45 nC). Low Crss ( typical 25 pF). Fast switching. 100% avalanche tested. Improved dv/dt capability. D D ! ● ◀ G S G! D2-PAK G D S FQB Series ▲ ● ● I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB13N50 / FQI13N50 500 Units V 12.5 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) 7.9 A 50 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 810 mJ IAR Avalanche Current (Note 1) 12.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 17 4.5 3.13 mJ V/ns W 170 1.35 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 0.74 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FQB13N50 / FQI13N50 March 2001 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 500 -- -- V -- 0.48 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = 500 V, VGS = 0 V -- -- 1 µA VDS = 400 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.25 A -- 0.33 0.43 Ω gFS Forward Transconductance VDS = 50 V, ID = 6.25 A -- 10 -- S -- 1800 2300 pF -- 245 320 pF -- 25 35 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250 V, ID = 13.4 A, RG = 25 Ω (Note 4, 5) VDS = 400 V, ID = 13.4 A, VGS = 10 V (Note 4, 5) -- 40 90 ns -- 140 290 ns -- 100 210 ns -- 85 180 ns -- 45 60 nC -- 11 -- nC -- 22 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12.5 A ISM -- -- 50 A -- -- 1.4 V -- 290 -- ns -- 2.6 -- µC VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12.5 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 13.4 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.3mH, IAS = 12.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 13.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FQB13N50 / FQI13N50 Electrical Characteristics FQB13N50 / FQI13N50 Typical Characteristics VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID , Drain Current [A] 1 10 ID , Drain Current [A] 1 10 0 10 150℃ 25℃ 0 10 -55℃ ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.4 IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.2 VGS = 10V 1.0 VGS = 20V 0.8 0.6 0.4 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.2 ※ Note : TJ = 25℃ -1 0.0 0 10 20 30 50 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 12 VDS = 100V Ciss Coss 2000 1500 1000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 500 VGS, Gate-Source Voltage [V] 10 2500 Capacitance [pF] 40 VDS = 250V VDS = 400V 8 6 4 2 ※ Note : ID = 13.4 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 0 5 10 15 20 25 30 35 40 45 50 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, March 2001 FQB13N50 / FQI13N50 Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.7 A 0.5 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 15 Operation in This Area is Limited by R DS(on) 2 10 10 µs ID, Drain Current [A] ID, Drain Current [A] 12 100 µs 1 ms 1 10 10 ms DC 0 10 ※ Notes : 9 6 3 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C (t) = 0 .7 4 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) -1 0 .1 0 .0 5 PDM 0 .0 2 θ JC (t), T h e rm a l R e s p o n s e 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 0 .0 1 t2 Z s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FQB13N50 / FQI13N50 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 12V Qg 10V 200nF 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG ID (t) 10V DUT VDS (t) VDD tp ©2001 Fairchild Semiconductor Corporation Time Rev. A, March 2001 FQB13N50 / FQI13N50 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FQB13N50 / FQI13N50 Package Dimensions 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 2.54 TYP (0.75) ° ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 FQB13N50 / FQI13N50 Package Dimensions (Continued) I2PAK 4.50 ±0.20 (0.40) 9.90 ±0.20 +0.10 MAX13.40 9.20 ±0.20 (1.46) 1.20 ±0.20 1.30 –0.05 0.80 ±0.10 2.54 TYP 2.54 TYP 10.08 ±0.20 1.47 ±0.10 MAX 3.00 (0.94) 13.08 ±0.20 ) 5° (4 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 10.00 ±0.20 ©2001 Fairchild Semiconductor Corporation Rev. A, March 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Star* Power™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H1