± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 D RS-232 Bus-Pin ESD Protection Exceeds D D D D D D D D D DB, DW, OR PW PACKAGE (TOP VIEW) ±15 kV Using Human-Body Model (HBM) Meets or Exceeds the Requirements of TIA/EIA-232-F and ITU v.28 Standards Operates With 3-V to 5.5-V VCC Supply Operates Up To 250 kbit/s Two Drivers and Two Receivers Low Standby Current . . . 1 µA Typical External Capacitors . . . 4 × 0.1 µF Accepts 5-V Logic Input With 3.3-V Supply Alternative High-Speed Pin-Compatible Device (1 Mbit/s) − SNx5C3222 Applications − Battery-Powered Systems, PDAs, Notebooks, Laptops, Palmtop PCs, and Hand-Held Equipment EN C1+ V+ C1− C2+ C2− V− DOUT2 RIN2 ROUT2 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 PWRDOWN VCC GND DOUT1 RIN1 ROUT1 NC DIN1 DIN2 NC NC − No internal connection description/ordering information The MAX3222 consists of two line drivers, two line receivers, and a dual charge-pump circuit with ±15-kV ESD protection pin to pin (serial-port connection pins, including GND). The device meets the requirements of TIA/EIA-232-F and provides the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from a single 3-V to 5.5-V supply. The device operates at data signaling rates up to 250 kbit/s and a maximum of 30-V/µs driver output slew rate. ORDERING INFORMATION SOIC (DW) −0°C to 70°C SSOP (DB) TSSOP (PW) SOIC (DW) −40°C to 85°C ORDERABLE PART NUMBER PACKAGE† TA SSOP (DB) TSSOP (PW) Tube of 25 MAX3222CDW Reel of 2000 MAX3222CDWR Tube of 70 MAX3222CDB Reel of 2000 MAX3222CDBR Tube of 70 MAX3222CPW Reel of 2000 MAX3222CPWR Tube of 25 MAX3222IDW Reel of 2000 MAX3222IDWR Tube of 70 MAX3222IDB Reel of 2000 MAX3222IDBR Tube of 70 MAX3222IPW Reel of 2000 MAX3222IPWR TOP-SIDE MARKING MAX3222C MA3222C MA3222C MAX3222I MB3222I MB3222I † Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 2004, Texas Instruments Incorporated !"#$ % &'!!($ #% )'*+&#$ ,#$( !,'&$% &!" $ %)(&&#$% )(! $-( $(!"% (.#% %$!'"($% %$#,#!, /#!!#$0 !,'&$ )!&(%%1 ,(% $ (&(%%#!+0 &+',( $(%$1 #++ )#!#"($(!% POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 ± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 description/ordering information (continued) The MAX3222 can be placed in the power-down mode by setting PWRDOWN low, which draws only 1 µA from the power supply. When the device is powered down, the receivers remain active while the drivers are placed in the high-impedance state. Also, during power down, the onboard charge pump is disabled; V+ is lowered to VCC, and V− is raised toward GND. Receiver outputs also can be placed in the high-impedance state by setting EN high. Function Tables EACH DRIVER INPUTS DIN PWRDOWN OUTPUT DOUT X L Z L H H H H L H = high level, L = low level, X = irrelevant, Z = high impedance EACH RECEIVER INPUTS RIN EN OUTPUT ROUT H L L H L L X H Z Open L H H = high level, L = low level, X = irrelevant, Z = high impedance (off), Open = input disconnected or connected driver off logic diagram (positive logic) DIN1 DIN2 PWRDOWN EN ROUT1 ROUT2 2 13 17 12 8 20 DOUT1 DOUT2 Powerdown 1 15 16 10 9 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 RIN1 RIN2 ± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 6 V Positive output supply voltage range, V+ (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V Negative output supply voltage range, V− (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to −7 V Supply voltage difference, V+ − V− (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V Input voltage range, VI: Drivers, EN, PWRDOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 6 V Receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V to 25 V Output voltage range, VO: Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −13.2 V to 13.2 V Receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to VCC + 0.3 V Package thermal impedance, θJA (see Notes 2 and 3): DB package . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W DW package . . . . . . . . . . . . . . . . . . . . . . . . . . 58°C/W PW package . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W Operating virtual junction temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltages are with respect to network GND. 2. Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) − TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability. 3. The package thermal impedance is calculated in accordance with JESD 51-7. recommended operating conditions (see Note 4 and Figure 5) Supply voltage VCC = 3.3 V VCC = 5 V VIH Driver and control high-level input voltage DIN, EN, PWRDOWN VIL VI Driver and control low-level input voltage DIN, EN, PWRDOWN Driver and control input voltage DIN, EN, PWRDOWN VI Receiver input voltage VCC = 3.3 V VCC = 5 V MAX3222C TA Operating free-air temperature MAX3222I MIN NOM MAX 3 3.3 3.6 4.5 5 5.5 UNIT V 2 V 2.4 0.8 V 0 5.5 V −25 25 V 0 70 −40 85 °C NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 4 and Figure 5) PARAMETER II ICC TEST CONDITIONS Input leakage current (EN, PWRDOWN) Supply current No load, PWRDOWN at VCC MIN TYP‡ MAX ±0.01 ±1 µA 0.3 1 mA 10 µA Supply current (powered off) No load, PWRDOWN at GND 1 ‡ All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 UNIT 3 ± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 DRIVER SECTION electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 4 and Figure 5) PARAMETER TEST CONDITIONS MIN TYP† VOH VOL High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.4 Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC −5 −5.4 IIH IIL High-level input current VI = VCC VI at GND Low-level input current IOS Short-circuit output current‡ VCC = 3.6 V, VCC = 5.5 V, ro Output resistance VCC, V+, and V− = 0 V, VO = ±2 V PWRDOWN = GND, VCC = 3 V to 3.6 V VO = ±12 V, PWRDOWN = GND, VCC = 4.5 V to 5.5 V VO = ±10 V, Ioff Output leakage current VO = 0 V VO = 0 V 300 MAX UNIT V V ±0.01 ±1 µA ±0.01 ±1 µA ±35 ±60 mA Ω 10M ±25 µA ±25 † All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. ‡ Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time. NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. switching characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 4 and Figure 5) PARAMETER TEST CONDITIONS MIN TYP† 150 250 kbit/s 300 ns MAX Maximum data rate CL = 1000 pF, One DOUT switching, RL = 3 kΩ, See Figure 1 tsk(p) Pulse skew§ CL = 150 pF to 2500 pF, See Figure 2 RL = 3 kΩ to 7 kΩ, SR(tr) Slew rate, transition region (See Figure 1) RL = 3 kΩ to 7 kΩ, VCC = 3.3 V CL = 150 pF to 1000 pF 6 30 CL = 150 pF to 2500 pF 4 30 † All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. § Pulse skew is defined as |tPLH − tPHL| of each channel of the same device. NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 UNIT V/µs ± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 RECEIVER SECTION electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 4 and Figure 5) PARAMETER VOH VOL TEST CONDITIONS High-level output voltage IOH = −1 mA IOL = 1.6 mA Low-level output voltage VIT+ Positive-going input threshold voltage VCC = 3.3 V VCC = 5 V VIT− Negative-going input threshold voltage VCC = 3.3 V VCC = 5 V Vhys Ioff Input hysteresis (VIT+ − VIT−) TYP† MIN VCC − 0.6 V MAX VCC − 0.1 V V 0.4 1.5 2.4 1.8 2.4 0.6 1.2 0.8 1.5 ±0.05 EN = VCC ri Input resistance VI = ±3 V to ±25 V 3 5 † All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. V V V 0.3 Output leakage current UNIT V ±10 µA 7 kΩ switching characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 4) PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT tPLH tPHL Propagation delay time, low- to high-level output CL = 150 pF, See Figure 3 300 ns Propagation delay time, high- to low-level output CL= 150 pF, See Figure 3 300 ns ten Output enable time CL= 150 pF, RL = 3 kΩ, See Figure 4 200 ns tdis Output disable time CL= 150 pF, RL = 3 kΩ, See Figure 4 200 ns tsk(p) Pulse skew‡ See Figure 3 300 † All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. ‡ Pulse skew is defined as |tPLH − tPHL| of each channel of the same device. NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 ns 5 ± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 PARAMETER MEASUREMENT INFORMATION 3V Input Generator (see Note B) 1.5 V RS-232 Output 50 Ω RL 1.5 V 0V CL (see Note A) 3V PWRDOWN tTHL tTLH VOH 3V 3V Output −3 V −3 V VOL TEST CIRCUIT VOLTAGE WAVEFORMS SR(tr) + t THL 6V or t TLH NOTES: A. CL includes probe and jig capacitance. B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns. Figure 1. Driver Slew Rate 3V Generator (see Note B) RS-232 Output 50 Ω RL Input 1.5 V 1.5 V 0V CL (see Note A) tPHL tPLH VOH 3V PWRDOWN 50% 50% Output VOL TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. CL includes probe and jig capacitance. B. The pulse generator has the following characteristics: PRR = 250 kbit/s, ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns. Figure 2. Driver Pulse Skew EN 0V 3V Input 1.5 V 1.5 V −3 V Output Generator (see Note B) 50 Ω tPHL CL (see Note A) tPLH VOH 50% Output 50% VOL TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. CL includes probe and jig capacitance. B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns. Figure 3. Receiver Propagation Delay Times 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 ± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 PARAMETER MEASUREMENT INFORMATION VCC S1 GND RL Output 3 V or 0 V CL (see Note A) EN 3V Input 1.5 V 0V tPZH (S1 at GND) tPHZ S1 at GND) VOH Output 50% 0.3 V Generator (see Note B) 1.5 V 50 Ω tPLZ (S1 at VCC) 0.3 V Output 50% VOL tPZL (S1 at VCC) TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. CL includes probe and jig capacitance. B. The pulse generator has the following characteristics: ZO = 50 Ω, 50% duty cycle, tr ≤ 10 ns, tf ≤ 10 ns. Figure 4. Receiver Enable and Disable Times POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 ± SLLS408G − JANUARY 2000 − REVISED MARCH 2004 APPLICATION INFORMATION 1 EN 2 + C1 − 3 C3† + 20 Powerdown VCC C1+ V+ GND PWRDOWN 19 18 + C BYPASS − = 0.1 µF − 4 5 17 C1− 16 C2+ DOUT1 RIN1 + C2 − 6 7 C4 DOUT2 RIN2 ROUT2 − 15 C2− 14 V− ROUT1 NC + 8 13 9 12 10 11 DIN1 DIN2 NC † C3 can be connected to VCC or GND. NOTES: A. Resistor values shown are nominal. B. NC − No internal connection C. Nonpolarized ceramic capacitors are acceptable. If polarized tantalum or electrolytic capacitors are used, they should be connected as shown. VCC vs CAPACITOR VALUES VCC 3.3 V " 0.3 V C1 0.1 µF C2, C3, and C4 0.1 µF 5 V " 0.5 V 0.047 µF 0.33 µF 3 V to 5.5 V 0.1 µF 0.47 µF Figure 5. Typical Operating Circuit and Capacitor Values 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PACKAGE OPTION ADDENDUM www.ti.com 23-Sep-2005 PACKAGING INFORMATION (1) Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty MAX3222CDB ACTIVE SSOP DB 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CDBE4 ACTIVE SSOP DB 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CDBR ACTIVE SSOP DB 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CDBRE4 ACTIVE SSOP DB 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CDW ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CDWE4 ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CDWR ACTIVE SOIC DW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CDWRE4 ACTIVE SOIC DW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CPW ACTIVE TSSOP PW 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CPWE4 ACTIVE TSSOP PW 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CPWR ACTIVE TSSOP PW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222CPWRE4 ACTIVE TSSOP PW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDB ACTIVE SSOP DB 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDBE4 ACTIVE SSOP DB 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDBR ACTIVE SSOP DB 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDBRE4 ACTIVE SSOP DB 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDW ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDWE4 ACTIVE SOIC DW 20 25 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDWR ACTIVE SOIC DW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IDWRE4 ACTIVE SOIC DW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IPW ACTIVE TSSOP PW 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IPWE4 ACTIVE TSSOP PW 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IPWR ACTIVE TSSOP PW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM MAX3222IPWRE4 ACTIVE TSSOP PW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM The marketing status values are defined as follows: Addendum-Page 1 Lead/Ball Finish MSL Peak Temp (3) PACKAGE OPTION ADDENDUM www.ti.com 23-Sep-2005 ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 MECHANICAL DATA MSSO002E – JANUARY 1995 – REVISED DECEMBER 2001 DB (R-PDSO-G**) PLASTIC SMALL-OUTLINE 28 PINS SHOWN 0,38 0,22 0,65 28 0,15 M 15 0,25 0,09 8,20 7,40 5,60 5,00 Gage Plane 1 14 0,25 A 0°–ā8° 0,95 0,55 Seating Plane 2,00 MAX 0,10 0,05 MIN PINS ** 14 16 20 24 28 30 38 A MAX 6,50 6,50 7,50 8,50 10,50 10,50 12,90 A MIN 5,90 5,90 6,90 7,90 9,90 9,90 12,30 DIM 4040065 /E 12/01 NOTES: A. B. C. D. All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion not to exceed 0,15. Falls within JEDEC MO-150 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 MECHANICAL DATA MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999 PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE 14 PINS SHOWN 0,30 0,19 0,65 14 0,10 M 8 0,15 NOM 4,50 4,30 6,60 6,20 Gage Plane 0,25 1 7 0°– 8° A 0,75 0,50 Seating Plane 0,15 0,05 1,20 MAX PINS ** 0,10 8 14 16 20 24 28 A MAX 3,10 5,10 5,10 6,60 7,90 9,80 A MIN 2,90 4,90 4,90 6,40 7,70 9,60 DIM 4040064/F 01/97 NOTES: A. B. C. D. All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold flash or protrusion not to exceed 0,15. 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