SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting. FEATURES • UL Recognized (File #E90700, volume 2) • VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M) • Convenient Plastic SOIC-8 Surface Mountable Package Style • Standard SOIC-8 Footprint, with 0.050" Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input-Output Isolation of 2500 VAC(rms) Guaranteed ANODE 1 8 N/C • Minimum BVCEO of 30V guaranteed CATHODE 2 7 BASE APPLICATIONS • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Regulation Feedback Circuits • Monitor and Detection Circuits © 2005 Fairchild Semiconductor Corporation Page 1 of 10 N/C 3 6 COLLECTOR N/C 4 5 EMITTER 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified) Rating Symbol Value Unit IF 60 mA IF (pk) 1.0 A Reverse Voltage VR 6.0 V LED Power Dissipation @ TA = 25°C Derate above 25°C PD 90 0.8 mW mW/°C Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 7.0 V Collector-Base Voltage VCBO 70 V Collector Current-Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C Derate above 25°C PD 150 1.76 mW mW/°C VISO 2500 Vac(rms) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range TA -40 to +100 °C Tstg -40 to +150 °C TL 260 °C EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100 µs, 120 pps) DETECTOR TOTAL DEVICE Input-Output Isolation Voltage (1,2,3) (f = 60 Hz, t = 1 min.) Storage Temperature Range Lead Soldering Temperature (1/16" from case, 10 sec. duration) © 2005 Fairchild Semiconductor Corporation Page 2 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified) Parameter Test Conditions Symbol Min Typ** Max Unit EMITTER Input Forward Voltage (IF = 10 mA) VF — 1.15 1.5 V Reverse Leakage Current (VR = 6.0 V) IR — 0.001 100 µA CIN — 18 — pF ICEO1 ICEO2 — — 1.0 1.0 50 — nA µA Input Capacitance DETECTOR Collector-Emitter Dark Current (VCE = 10 V, TA = 25°C) (VCE = 10 V, TA = 100°C) Collector-Emitter Breakdown Voltage (IC = 100 µA) BVCEO 30 100 — V Emitter-Collector Breakdown Voltage (IE = 100 µA) BVECO 7.0 10 — V (f = 1.0 MHz, VCE = 0) CCE — 7.0 — pF (IF = 10 mA, VCE = 10 V) CTR 20 50 100 — — — — — — % f = (60 Hz AC Peak, t = 1 min.) VISO 2500 — — Vac(rms) (V = 500 V) RISO 1011 — — Ω VCE (sat) — — 0.4 V CISO — 0.2 — pF Collector-Emitter Capacitance COUPLED Collector-Output Current(4) MOC211-M MOC212-M MOC213-M Isolation Surge Voltage(1,2,3) Isolation Resistance(2) Collector-Emitter Saturation Voltage Isolation Capacitance(2) (IC = 2.0 mA, IF = 10 mA) (V = 0 V, f = 1 MHz) Turn-On Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) ton — 7.5 — µs Turn-Off Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) toff — 5.7 — µs Rise Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) tr — 3.2 — µs Fall Time (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) tf — 4.7 — µs ** Typical values at TA = 25°C 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. © 2005 Fairchild Semiconductor Corporation Page 3 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M Fig. 2 Output Curent vs. Input Current Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.7 VF - FORWARD VOLTAGE (V) 1.6 1.5 1.4 TA = –55°C 1.3 1.2 TA = 25°C 1.1 TA = 100°C 1.0 1 10 100 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 VCE = 5V NORMALIZED TO IF = 10mA 1 0.1 IF - LED FORWARD CURRENT (mA) 0.01 0.1 1 Fig. 3 Output Current vs. Ambient Temperature 10 100 IF - LED INPUT CURRENT (mA) 10 I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) Fig. 4 Output Current vs. Collector - Emitter Voltage 1.6 1 NORMALIZED TO TA = 25°C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I F = 10mA NORMALIZED TO VCE = 5V 0.0 0 120 Fig. 5 Dark Current vs. Ambient Temperature 2 3 4 5 6 7 8 9 10 Fig. 6 CTR vs. RBE (Unsaturated) 10000 1.0 0.9 IF = 20mA VCE=10V 1000 0.8 0.7 NORMALIZED CTR I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1 VCE - COLLECTOR -EMITTER VOLTAGE (V) TA - AMBIENT TEMPERATURE (°C) 100 10 IF = 10mA 0.6 0.5 IF = 5mA 0.4 0.3 0.2 1 VCE = 5V, TA = 25°C Normalized to: CTR at RBE = Open 0.1 0.0 10 0.1 0 20 40 60 80 100 100 100 0 RBE - BASE RESISTANCE (kΩ) TA - AMBIENT TEMPERATURE (°C) © 2005 Fairchild Semiconductor Corporation Page 4 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M Fig. 8 Normalized ton vs. RBE Fig. 7 CTR vs. RBE (Saturated) 1.0 4.0 0.9 3.5 0.8 3.0 0.7 NORMALIZED ton NORMALIZED CTR IF = 20mA IF = 10mA 0.6 0.5 IF = 5mA 0.4 0.3 VCC = 10V IC = 2mA RL = 100 NORMALIZED TO : ton AT RBE = OPEN 2.5 2.0 1.5 1.0 0.2 VCE = 0.3V, TA = 25°C Normalized to: CTR at RBE = Open 0.1 0.0 10 0.5 100 0.0 0.01 1000 RBE - BASE RESISTANCE (kΩ) 0.1 1 10 100 RBE - BASE RESISTANCE (MΩ) Fig. 9 Normalized tof vs. RBE 1.6 1.4 NORMALIZED toff 1.2 VCC = 10V IC = 2mA RL = 100 NORMALIZED TO : toff AT RBE = OPEN 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 100 RBE - BASE RESISTANCE (MΩ) © 2005 Fairchild Semiconductor Corporation Page 5 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M TEST CIRCUIT WAVE FORMS VCC = 10V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 6. Switching Time Test Circuit and Waveforms © 2005 Fairchild Semiconductor Corporation Page 6 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M Package Dimensions (Surface Mount) MOC213-M 8-Pin Small Outline 0.024 (0.61) SEATING PLANE 0.164 (4.16) 0.144 (3.66) 0.060 (1.52) 0.202 (5.13) 0.182 (4.63) 0.275 (6.99) 0.155 (3.94) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) 0.050 (1.27) TYP Lead Coplanarity : 0.004 (0.10) MAX © 2005 Fairchild Semiconductor Corporation Page 7 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M ORDERING INFORMATION Option Order Entry Identifier V V R1 R1 R1V R1V R2 R2 R2V R2V Description VDE 0884 Tape and reel (500 units per reel) VDE 0884, Tape and reel (500 units per reel) Tape and reel (2500 units per reel) VDE 0884, Tape and reel (2500 units per reel) QT Carrier Tape Specifications 8.0 ± 0.10 3.50 ± 0.20 0.30 MAX 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.10 1.75 ± 0.10 5.5 ± 0.05 12.0 ± 0.3 8.3 ± 0.10 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 Ø1.5 ± 0.1/-0 User Direction of Feed © 2005 Fairchild Semiconductor Corporation Page 8 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) © 2005 Fairchild Semiconductor Corporation Page 9 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. © 2005 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 10 of 10 6/15/05