2-Channel ESD Protection Array PACDN004 Features • • • • • • • Two channels of ESD protection +8kV contact, +15kV air ESD protection per channel (IEC 61000-4-2 standard) +15kV of ESD protection per channel (HBM) Low loading capacitance of 3 pF typical Low leakage current is ideal for battery-powered devices Miniature 4-pin SOT-143 package RoHS compliant (lead-free) finishing Product Description The PACDN004 is a diode array designed to provide two channels of ESD protection for electronic components or sub-systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (VP) or negative (VN) supply. The PACDN004 will protect against ESD pulses up to ±15kV Human Body Model, and ±8kV contact discharge per International Standard IEC 61000-4-2. Applications • • • • • • • Consumer electronic products Cellular phones PDAs Notebook computers Desktop PCs Digital cameras and camcorders VGA (video) port protection for desktop and portable PCs This device has identical characteristics as the PACDN006 (6-channel array). They can be used together in order to provide a larger number of protected inputs if required. This device is particularly well-suited for a wide range of portable electronics (e.g. cellular phones, PDAs, notebook computers) because of its small package footprint, high ESD protection level and low loading capacitance. It is also suitable for protecting video output lines and I/O ports in computers and peripherals. The PACDN004 is available with RoHS compliant lead-free finishing. ©2010 SCILLC. All rights reserved. May 2010 Rev. 3 Publication Order Number: PACDN004/D PACDN004 Rev. 3 | Page 2 of 9 | www.onsemi.com PACDN004 PIN DESCRIPTIONS PIN NAME TYPE DESCRIPTION 1 VN Gnd Negative voltage supply rail or ground reference rail 2 CH1 I/O ESD Channel 1 3 CH2 I/O ESD Channel 2 4 VP Supply Positive voltage supply rail Ordering Information PART NUMBERING INFORMATION Pins Package Ordering Part Number1 Part Marking 4 SOT-143 PACDN004SR D014 Note 1: Parts are shipped in Tape & Reel form unless otherwise specified. Specifications ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Supply Voltage (VP - VN) 6.0 V Diode Forward DC Current (Note 1) 20 mA Operating Temperature Range -40 to +85 °C Storage Temperature Range -65 to +150 °C (VN - 0.5) to (VP + 0.5) V 225 mW DC Voltage at any channel input Package Power Rating Note 1: Only one diode conducting at a time. Rev. 3 | Page 3 of 9 | www.onsemi.com PACDN004 STANDARD OPERATING CONDITIONS PARAMETER Operating Temperature Range Operating Supply Voltage (VP - VN) RATING UNITS -40 to +85 °C 0 to 5.5 V ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1) SYMBOL PARAMETER CONDITIONS IP Supply Current (VP-VN)=5.5V VF Diode Forward Voltage IF = 20mA ILEAK Channel Leakage Current CIN Channel Input Capacitance VESD ESD Protection Peak Discharge Voltage at any channel input, in system a) Human Body Model, MIL-STD883, Method 3015 b) Contact discharge per IEC 61000-4-2 standard c) Air discharge per IEC 61000-4-2 VCL Channel Clamp Voltage MIN TYP MAX UNITS 10 μA 0.95 V +0.1 +1.0 μA 3 5 pF 0.65 @ 1 MHz, VP=5V, VN=0V, VIN=2.5V Note 2 Notes 2 and 3 +15 kV Notes 2 and 4 +8 kV Notes 2 and 4 +15 kV @15kV ESD HBM; Notes 2 and 3 VP + 13.0 VN - 13.0 Positive Transients Negative Transients Note 1: All parameters specified at TA=25°C unless otherwise noted. VP = 5V, VN = 0V unless noted. Note 2: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for more details). Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 5.0V, VN grounded. Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 5.0V, VN grounded. Rev. 3 | Page 4 of 9 | www.onsemi.com V V PACDN004 Performance Information Input Capacitance vs. Input Voltage Rev. 3 | Page 5 of 9 | www.onsemi.com PACDN004 Application Information Design Considerations In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically a connector) and the ESD protection device. Refer to Application of Positive ESD Pulse between Input Channel and Ground, which illustrates an example of a positive ESD pulse striking an input channel. The parasitic series inductance back to the power supply is represented by L1 and L2. The voltage VCL on the line being protected is: VCL = Fwd voltage drop of D1 + VSUPPLY + L1 x d(IESD ) / dt+ L2 x d(IESD ) / dt where IESD is the ESD current pulse, and VSUPPLY is the positive supply voltage. An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge per the IEC61000-4-2 standard results in a current pulse that rises from zero to 30 Amps in 1ns. Here d(IESD)/dt can be approximated by ΔIESD/Δt, or 30/(1x10-9). So just 10nH of series inductance (L1 and L2 combined) will lead to a 300V increment in VCL! Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically increased negative voltage on the line being protected. Another consideration is the output impedance of the power supply for fast transient currents. Most power supplies exhibit a much higher output impedance to fast transient current spikes. In the VCL equation above, the VSUPPLY term, in reality, is given by (VDC + IESD x ROUT), where VDC and ROUT are the nominal supply DC output voltage and effective output impedance of the power supply respectively. As an example, a ROUT of 1 ohm would result in a 10V increment in VCL for a peak IESD of 10A. If the inductances and resistance described above are close to zero, the rail-clamp ESD protection diodes will do a good job of protection. However, since this is not possible in practical situations, a bypass capacitor must be used to absorb the very high frequency ESD energy. So for any brand of rail-clamp ESD protection diodes, a bypass capacitor should be connected between the VP pin of the diodes and the ground plane (VN pin of the diodes) as shown in the Application Circuit diagram below. A value of 0.22µF is adequate for IEC-61000-4-2 level 4 contact discharge protection (+8kV). Ceramic chip capacitors mounted with short printed circuit board traces are good choices for this application. Electrolytic capacitors should be avoided as they have poor high frequency characteristics. For extra protection, connect a zener diode in parallel with the bypass capacitor to mitigate the effects of the parasitic series inductance inherent in the capacitor. The breakdown voltage of the zener diode should be slightly higher than the maximum supply voltage. As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the ESD device to minimize stray series inductance. Additional Information See also California Micro Devices Application Notes AP209, “Design Considerations for ESD Protection” and AP219, "ESD Protection for USB 2.0 Systems" Rev. 3 | Page 6 of 9 | www.onsemi.com PACDN004 Figure 1. Application of Positive ESD Pulse between Input Channel and Ground Rev. 3 | Page 7 of 9 | www.onsemi.com PACDN004 Mechanical Details SOT-143 Mechanical Specifications PACDN004 devices are packaged in 4-pin SOT-143 packages. Dimensions are presented below. For complete information on the SOT-143 package, see the California Micro Devices SOT-143 Package Information document. PACKAGE DIMENSIONS Package SOT-143 Pins 4 Millimeters Inches Dimensions Min Max Min Max A 0.80 1.22 0.031 0.048 A1 0.05 0.15 0.002 0.006 b 0.30 0.50 0.012 0.019 b2 0.76 0.89 0.030 0.035 c 0.08 0.20 0.003 0.008 D 2.80 3.04 0.110 0.119 E 2.10 2.64 0.082 0.103 E1 1.20 1.40 0.047 0.055 e 1.92 BSC 0.075 BSC e1 0.20 BSC 0.008 BSC L L1 # per tape and reel 0.4 0.6 0.54 REF 0.016 0.024 Package Dimensions for SOT-143. 0.021 REF 3000 pieces Controlling dimension: millimeters Rev. 3 | Page 8 of 9 | www.onsemi.com PACDN004 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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