Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · LF amplifiers, various drivers, muting circuit. unit:mm 2038 Features [2SC3651] · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCEO VEBO 100 V 15 V IC 200 mA Collector Current (Pulse) ICP 300 mA Collector Dissipation PC 500 mW PC* Tj 1.3 W Junction Temperature 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage Collector Current * Mounted on ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=80V, IE=0 0.1 µA Emitter Cutoff Current IEBO 0.1 µA hFE1 VEB=10V, IC=0 VCE=5V, IC=10mA Gain-Bandwidth Product hFE2 fT VCE=5V, IC=100mA VCE=10V, IC=10mA Output Capacitance Cob VCB=10V, f=1MHz DC Current Gain 500 1000 2000 400 150 MHz 6.5 pF Marking : CG Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2098HA (KT)/4217KI/2145KI, TS No.1779–1/3 2SC3651 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Symbol VCE(sat) VBE(sat) Conditions Ratings min typ max Unit IC=100mA, IB=2mA 0.15 0.5 V IC=100mA, IB=2mA 0.85 1.2 V Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, IB=0 Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 120 V 100 V 15 V No.1779–2/3 2SC3651 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 1998. Specifications and information herein are subject to change without notice. PS No.1779–3/3