SEMTECH 1N6464US

1N6461US THRU 1N6468US
QPL 500 Watt Surface Mount TVS
POWER DISCRETES
Description
Features
The 1N64xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices
are constructed using a p-n junction TVS diode in a
hermetically sealed, voidless glass package. The
hermetically sealed package provides high reliability in
harsh environmental conditions. TVS diodes are further
characterized by their high surge capability, low operating
and clamping voltages, and a theoretically instantaneous
response time. This makes them ideal for use as board
level protection for sensitive semiconductor components.
These devices are DESC QPL qualified to MIL-S-19500/
551.
‹
‹
‹
‹
‹
‹
500 Watts peak pulse power (tp = 10/1000µs)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Unidirectional
Available in JTX, and JTXV versions per
MIL-S-19500/551
Applications
‹
‹
‹
‹
‹
Aerospace and industrial electronics
Board level protection
Airborne systems
Shipboard systems
Ground systems
Mechanical Characteristics
‹ Hermetically sealed glass package
Absolute Maximum Ratings
Rating
Symbol
Value
Units
Peak Pulse Power (tp = 10 x 1000µs)
P pk
500
Watts
Storage Temperature Range
TSTG
-65 to +175
°C
Steady-State Power Dissipation @ TL = 75°C (3/8")
PD
3
Watts
Revision: August 8, 2007
1
www.semtech.com
1N6461US THRU 1N6468US
POWER DISCRETES
Electrical Characteristics
Electrical specifications @ TA = 25°C unless otherwise specified.
IT
Maximum
Clamping
Voltage
VC @ IPP
Peak Pulse
Current
IPP
TP = 1mS
Peak Pulse
Current
IPP
TP = 20µS
Temp.
Coef.
of V BR
αVZ
V
mA
V
A
A
% / °C
3000
5.6
25
9.0
56
315
0.040
6
2500
6.5
20
11.0
46
258
0.040
1N6463US
12
500
13.6
5
22.6
22
125
0.050
1N6464US
15
500
16.4
5
26.5
19
107
0.060
1N6465US
24
50
27.0
2
41.4
12
69
0.084
1N6466US
30.5
3
33.0
1
47.5
11
63
0.093
1N6467US
40.3
2
43.7
1
63.5
8
45
0.094
1N6468US
51.6
2
54.0
1
78.5
6
35
0.096
Device
Type
Reverse
Standoff
Voltage
VRWM
Reverse
L eakag e
Current
IR
Minimum
Breakdow n
Voltage
VBR @ IT
Test
Current
V
µA
1N6461US
5
1N6462US
 2007 Semtech Corp.
2
www.semtech.com
1N6461US THRU 1N6468US
POWER DISCRETES
Electrical Characteristics
PEAK PULSE POWER vs. PULSE TIME
10 x 1000µs IMPULSE WAVEFORM
STEADY STATE DERATING CHARACTERISTICS
FOR FREE AIR MOUNTING
 2007 Semtech Corp.
PULSE DERATING CURVE
3
www.semtech.com
1N6461US THRU 1N6468US
POWER DISCRETES
Ordering Information
Part Number
Description
1N6461US,
1N6462US,
1N6463US,
1N6464US,
1N6465US,
1N6466US,
1N6467US,
1N6468US
Surface Mount (US)(1)
Note:
(1) Available in trays and tape and reel packaging. Please
consult factory for quantities.
Outline Drawing
B
D
C
A
D
Dimensions
1N 6461U S - 1N 6468U S
Inches
Millimeters
MIN
MAX
MIN
MAX
A
0.200
0.225
5.08
5.72
B
0.019
0.028
0.48
0.71
C
0.003
-
0.08
-
D
0.137
0.148
3.48
3.76
Notes:
(1) Dimensions are in inches.
(2) Metric equivalents are given for general information only.
Contact Information
Semtech Corporation
Power Discretes Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
 2007 Semtech Corp.
4
www.semtech.com