1N6461US thru 1N6468US Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient SCOTTSDALE DIVISION APPEARANCE This surface mount series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MILPRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6 Volts with 500 W ratings. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as Category I for high reliability applications. The 500 W series is military qualified to MIL-PRF-19500/551. These devices are also available in axial-leaded packages for thru-hole mounting by deleting the “US” suffix (see separate data sheet for 1N6461 thru 1N6468). Microsemi also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages. Package “E” (or “D-5B”) WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • APPLICATIONS / BENEFITS High surge current and peak pulse power provides transient voltage protection for sensitive circuits Triple-layer passivation Internal “Category I” metallurgical bonds Voidless hermetically sealed glass package JAN/TX/TXV military qualifications available per MILPRF-19500/551 by adding JAN, JANTX, or JANTXV prefix Further options for screening in accordance with MILPRF-19500 for JANS by using a “MSP” prefix, e.g. MSP6462, MSP6468, etc. Axial-leaded equivalents are also available in a square-end-cap MELF configuration (see separate data sheet for 1N6461 thru 1N6168) MAXIMUM RATINGS • • • • • • • • • Military and other high reliability transient protection Extremely robust construction Working Peak “Standoff” Voltage (VWM) from 5.0 to 51.6 V Available as 500 W Peak Pulse Power (PPP) ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively Secondary lightning protection per select levels in IEC61000-4-5 Square-end-cap terminals for easy placement Nonsensitive to ESD per MIL-STD-750 Method 1020 Inherently radiation hard as described in Microsemi MicroNote 050 MECHANICAL AND PACKAGING o o Copyright 2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N6461 – 1N6468 1N6469 – 1N6476 • CASE: Hermetically sealed voidless hard glass • Operating & Storage Temperature: -55 C to +175 C with Tungsten slugs • Peak Pulse Power at 25oC: 500 Watts @ 10/1000 µs • TERMINATIONS: End caps are solid silver with (also see Figures 1,2 and 4) Tin/Lead (Sn/Pb) finish • Impulse repetition rate (duty factor): 0.01% • MARKING: None • Forward Surge Current: 80 Amps@ 8.33 ms one-half • POLARITY: Cathode band sine wave • Tape & Reel option: Standard per EIA-481-B • Forward Voltage: 1.5 V @ 1 Amp dc and 4.8 V at 100 Amps (pulsed) • Weight: 539 mg • Steady-State Power: 2.5 Watts @ TA = 25oC (see • See package dimensions on last page note below and Figure 4) • Thermal Resistance Junction to End Cap: 20 oC/W • Solder Temperatures: 260oC for 10 s (maximum) NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded. 1N6461US thru 1N6468US Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient SCOTTSDALE DIVISION TYPE 1N6461US 1N6462US 1N6463US 1N6464US 1N6465US 1N6466US 1N6467US 1N6468US Symbol VBR BREAK DOWN VOLTAGE V(BR) MIN. Volts 5.6 6.5 13.6 16.4 27.0 33.0 43.7 54.0 BREAKDOWN CURRENT I (BR) WORKING PEAK VOLTAGE VWM MAX LEAKAGE CURRENT ID mAdc 25 20 5 5 2 1 1 1 Vdc 5 6 12 15 24 30.5 40.3 51.6 µAdc 3000 2500 500 500 50 3 2 2 MAXIMUM CLAMPING VOLTAGE VC @ 10/1000 µs V(pk) 9.0 11.0 22.6 26.5 41.4 47.5 63.5 78.5 MAXIMUM PEAK PULSE CURRENT IPP @8/20 µs A(pk) 315 258 125 107 69 63 45 35 @10/1000 µs A(pk) 56 46 22 19 12 11 8 6 MAXIMUM TEMP. COEF. OF V(BR) o %/ C -.03, +0.04 0.06 0.085 0.085 .096 .098 .101 .103 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is also referred to as Standoff Voltage. Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature. Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions. Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP. VWM ID VC PPP GRAPHS 1N6461 – 1N6468 1N6469 – 1N6476 FIGURE 1 PEAK PULSE POWER vs. PULSE TIME Copyright 2004 11-01-2004 REV A FIGURE 2 10/1000 µs CURRENT IMPULSE WAVEFORM Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N6461US thru 1N6468US Voidless-Hermetically-Sealed Surface Mount Unidirectional Transient WWW . Microsemi .C OM Peak Pulse Power (Ppp), Current (Ipp), And DC Power in Percent of 25oC Rating SCOTTSDALE DIVISION FIGURE 3 8/20 µs CURRENT IMPULSE WAVEFORM (per MIL-PRF-19500/551 T – Temperature – oC FIGURE 4 DERATING CURVE PACKAGE DIMENSIONS Inches [mm] 1N6461 – 1N6468 1N6469 – 1N6476 E-MELF-PKG (D-5B) Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement as shown in the pad layout. Copyright 2004 11-01-2004 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3