1N6461US – 1N6468US Available on commercial versions Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/551 DESCRIPTION This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications where a failure cannot be tolerated. Working peak “standoff” voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded packages for thru-hole mounting. “B” SQ-MELF Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • • Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series. Available as 500 watt peak pulse power (P PP ). Working peak “standoff” voltage (V WM ) from 5.0 to 51.6 volt. High surge current and peak pulse power provides transient voltage protection for sensitive circuits. Triple-layer passivation. Internal “Category 1” metallurgical bonds. Voidless hermetically sealed glass package. JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in reference to MIL-PRF-19500 is also available. Also available in: “B” Package (axial –leaded) 1N6461 - 1N6468 (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • • • • • • • Military and other high-reliability applications. Extremely robust construction. ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively. Protection from secondary effects of lightning per select levels in IEC61000-4-5. Square-end-cap terminals for easy placement. Nonsensitive to ESD per MIL-STD-750 method 1020. Inherently radiation hard as described in Microsemi “MicroNote 050”. MAXIMUM RATINGS @ 25 ºC Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction to Endcap Forward Surge Current @ 8.3 ms half-sine Forward Voltage @ 1 Amp Peak Pulse Power @ 10/1000 µs (1) Reverse Power Dissipation Solder Temperature @ 10 s Notes: Symbol T J and T STG R ӨJEC I FSM VF P PP Value -55 to +175 20 80 1.5 500 Unit o C ºC/W A V W PR 2.5 260 W o C 1. Derate at 50 mW/oC (see figure 4). MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0286-1, Rev. 1 (4/22/13) ©2013 Microsemi Corporation Page 1 of 6 1N6461US – 1N6468US MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only. MARKING: Body paint and part number. POLARITY: Cathode band. TAPE & REEL option: Standard per EIA-296. Contact factory for quantities. WEIGHT: Approximately 750 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6461 US e3 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level CDS (reference JANS) Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant MELF Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol α V(BR) V (BR) V WM ID I PP VC P PP Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature expressed in %/°C or mV/°C. Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current: The current through the device at rated stand-off voltage. Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (I PP ) for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of I PP and V C . T4-LDS-0286-1, Rev. 1 (4/22/13) ©2013 Microsemi Corporation Page 2 of 6 1N6461US – 1N6468US ELECTRICAL CHARACTERISTICS TYPE 1N6461US 1N6462US 1N6463US 1N6464US 1N6465US 1N6466US 1N6467US 1N6468US MINIMUM BREAK DOWN VOLTAGE BREAKDOWN CURRENT I (BR) V (BR) @ I (BR) RATED WORKING STANDOFF VOLTAGE MAXIMUM STANDBY CURRENT MAXIMUM CLAMPING VOLTAGE ID V WM @ V RWM VC @ 10/1000 µs Volts mA V (pk) 5.6 6.5 13.6 16.4 27.0 33.0 43.7 54.0 25 20 5 5 2 1 1 1 5 6 12 15 24 30.5 40.3 51.6 T4-LDS-0286-1, Rev. 1 (4/22/13) µA 3000 2500 500 500 50 3 2 2 MAXIMUM PEAK IMPULSE CURRENT I PP MAXIMUM TEMP. COEF. OF α V(BR) V (pk) @ 8/20 µs A (pk) @ 10/1000 µs A (pk) %/oC 9.0 11.0 22.6 26.5 41.4 47.5 63.5 78.5 315 258 125 107 69 63 45 35 56 46 22 19 12 11 8 6 -0.03, +0.045 +0.060 +0.085 +0.085 +0.096 +0.098 +0.101 +0.103 ©2013 Microsemi Corporation Page 3 of 6 1N6461US – 1N6468US Reverse Peak Pulse Power (PPP) in kW GRAPHS Pulse Time (tp) IPP – Peak Pulse Current - % IPP FIGURE 1 Peak Pulse Power vs Pulse Time Time (t) in Milliseconds FIGURE 2 10/1000 µs Current Impulse Waveform T4-LDS-0286-1, Rev. 1 (4/22/13) ©2013 Microsemi Corporation Page 4 of 6 1N6461US – 1N6468US IPP – Peak Pulse Current - % IPP GRAPHS Time (t) in Milliseconds Peak Pulse Power (PPP), Current (IPP), And DC Power in Percent of 25°C Rating FIGURE 3 8/20 µs Current Impulse Waveform T – Temperature - °C FIGURE 4 Derating Curve T4-LDS-0286-1, Rev. 1 (4/22/13) ©2013 Microsemi Corporation Page 5 of 6 1N6461US – 1N6468US PACKAGE DIMENSIONS Inch BL Millimeters Min 0.137 Max 0.148 Min 3.48 Max 3.76 BD 0.200 0.225 5.08 5.72 ECT 0.019 0.028 0.48 0.71 S 0.003 --- 0.08 --- NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for information only. 3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations. 4. Dimensions are pre-solider dip. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. PAD LAYOUT A B C INCH 0.288 0.070 0.155 MILLIMETERS 7.32 1.78 3.94 Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. T4-LDS-0286-1, Rev. 1 (4/22/13) ©2013 Microsemi Corporation Page 6 of 6