SC656 Backlight Driver for 7 LEDs with Charge Pump and PWM Control POWER MANAGEMENT Features Description Input supply voltage range — 2.9V to 5.5V Charge pump modes — 1x, 1.5x and 2x PWM dimming control with low pass filter provides DC backlight current (not pulsed) Two independently configurable backlight banks PWM frequency range — 200Hz to 50kHz Seven adjustable current sinks — 500µA to 25mA Backlight current accuracy ±1.5% typical Backlight current matching ±0.5% typical LED float detection Charge pump frequency — 250kHz Low shutdown current — 0.1µA typical Ultra-thin package — 3 x 3 x 0.6(mm) Fully WEEE and RoHS compliant, and halogen free. The SC656 is a high efficiency charge pump LED driver using Semtech’s proprietary charge pump technology. Performance is optimized for use in single-cell Li-ion battery applications. The device provides backlight current using up to seven matched current sinks. The load and supply conditions determine whether the charge pump operates in 1x, 1.5x, or 2x mode. The seven backlights can be configured as a single group or split into two independent banks by setting the state of the BANK2 and BANK1 pins. If only one bank is needed, the BANK2, BANK1, ENS and ISETS pins must be grounded. The maximum current per LED in each bank is set by a resistor connected to ISETM or ISETS. LED current can be set between 500µA and 25mA. Backlight current is varied by applying a pulse-width modulated (PWM) signal to the ENM pin for the main LED bank and the ENS pin for the sub LED bank. The resulting DC current in each LED (IBL) is equal to the maximum current setting multiplied by the duty cycle of the PWM signal. During PWM operation, a low-pass filter is used to develop a DC current through the LED. The resulting power conversion is more efficient than comparable pulsed current solutions. Backlight fading is initiated when the duty cycle is changed. Applications Cellular phones, smart phones, and PDAs LCD display modules Portable media players Digital cameras Personal navigation devices Display/keypad backlighting and LED indicators The 3 x 3 (mm) package and minimal number of small external components make the SC656 an ideal backlight driver solution for space-limited designs. Typical Application Circuit VBAT = 2.9V to 5.5V SC656 IN CIN 2.2µF COUT 2.2µF GND RISETM RISETS ISETM BL1 ISETS BL2 BANK2 BANK1 September 24, 2009 OUT BL3 BL4 BL5 PWM Signal ENM BL6 PWM Signal ENS BL7 C1+ C1- C2+ C2- C1 2.2µF C2 2.2µF © 2009 Semtech Corporation US Patents: 6,504,422; 6,794,926 SC656 ENS 1 IN OUT C2+ C1+ C1- Ordering Information ENM Pin Configuration 20 19 18 17 16 15 C2- 2 14 GND ISETM 3 13 BANK2 ISETS 4 12 BANK1 11 BL7 T 6 7 8 9 10 BL3 BL4 BL5 BL6 5 BL2 BL1 TOP VIEW Device Package SC656ULTRT(1)(2) MLPQ-UT-20 3×3 SC656EVB Evaluation Board Notes: (1) Available in tape and reel only. A reel contains 3,000 devices. (2) Lead-free package only. Device is WEEE and RoHS compliant, and halogen free. MLPQ-UT-20; 3x3, 20 LEAD θJA = 35°C/W Marking Information 656 yyww xxxx yyww = Date Code xxxx = Semtech Lot Number SC656 Absolute Maximum Ratings Recommended Operating Conditions IN, OUT (V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6.0 Ambient Temperature Range (°C). . . . . . . . . . -40 ≤ TA ≤ +85 C1+, C2+ (V). . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (VOUT + 0.3) Input Voltage (V) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.9 to 5.5 Pin Voltage — All Other Pins (V). . . . . . . . . -0.3 to (VIN + 0.3) Output Voltage (V) . . . . . . . . . . . . . . . . . . . . . . . . 2.5 to 5.25 OUT Short Circuit Duration. . . . . . . . . . . . . . . . . . Continuous Voltage Difference between any two LEDs (V) . . . ∆VF ≤ 1.0 (2) ESD Protection Level(1) (kV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Information Thermal Resistance, Junction to Ambient(3) (°C/W) . . . . 40 Maximum Junction Temperature (°C). . . . . . . . . . . . . . . +150 Storage Temperature Range (°C) . . . . . . . . . . . . -65 to +150 Peak IR Reflow Temperature (10s to 30s) (°C) . . . . . . . +260 Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not recommended. NOTES: (1) Tested according to JEDEC standard JESD22-A114-B. (2) ∆VF(max) = 1.0V when VIN = 2.9V, higher VIN supports higher ∆VF(max) (3) Calculated from package in still air, mounted to 3 x 4.5(in), 4 layer FR4 PCB per JESD51 standards. Electrical Characteristics Unless otherwise noted, TA = +25°C for Typ, -40°C to +85°C for Min and Max, TJ(MAX) = 125°C, VIN = 3.7V, CIN= COUT = C1= C2= 2.2µF, (ESR = 0.03Ω), 500µA < IFS_BL < 25mA, Duty Cycle of PWM = 100%, All 7 LEDs connected and enabled as a single bank. Parameter Shutdown Current Quiescent Current Symbol Conditions IQ(OFF) IQ Min Typ Max Units TA = 25°C 0.1 2 µA 1x mode, VIN = 3.7V, 7 LEDs at 1mA on main bank, PWM duty cycle = 5%, RISETM = 4.99kΩ 2.5 1.5x mode, VIN = 3.2V, 7 LEDs at 1mA on main bank, PWM duty cycle = 5%, RISETM = 4.99kΩ 2.8 2x mode, VIN = 2.9V, 7 LEDs at 1mA on main bank, PWM duty cycle = 5%, RISETM = 4.99kΩ 3.0 mA IOUT(MAX) VIN > 3.0V, sum of all active LED currents, VOUT(MAX) = 4.2V 175 Backlight Current Setting IFS_BL PWM duty cycle = 100%, 200kΩ ≥ RISETX ≥ 4kΩ 0.5 Current Gain(1) IGAIN Gain from IISETX to IFS_BL 100 A/A VIN - ISET Voltage across RISETX 1 V Backlight Current Matching(2) IBL-BL IFS_BL = 12mA, Duty = 100% Backlight Current Accuracy IBL_ACC IFS_BL = 12mA, Duty = 100% EN/PWM Input Frequency fEN/PWM Duty-cycle percentage changes linearly with IFS_BL ENM, ENS Minimum High tHIGH_MIN Maximum Total Output Current Current Set Voltage -3.5 mA 25 ±0.5 +3.5 ±1.5 0.2 % % 50 1 mA kHz µs SC656 Electrical Characteristics (continued) Parameter Symbol Conditions Current Transition Settling Time ts Duty cycle change from 100% to 50%(1)(4) ENM/ENS Low Time tLT Time that voltage on ENM or ENS can be low without disabling the device 1x Mode to 1.5x Mode Falling Transition Voltage V TRANS1x IOUT = 70mA, IBLn = 10mA, VOUT = 3.2V 3.26 V 1.5x Mode to 2x Mode Falling Transition Voltage V TRANS1.5x IOUT = 70mA, IBLn = 10mA, VOUT = 4.0V(3) 2.90 V Current Sink Off-State Leakage Current IBLn(off ) VIN = VBLn = 4.2V 0.1 Charge Pump Frequency fPUMP VIN = 3.2V 250 OUT pin shorted to GND 50 Output Short Circuit Current Limit IOUT(SC) VOUT > 2.5V 400 Increasing VIN — lockout released 2.4 V 500 mV Under Voltage Lockout Threshold UVLO Hysteresis Min Typ Max Units 0.5 s 5 ms 1 µA kHz mA VUVLO VUVLO-HYS Over-Voltage Protection VOVP OUT pin open circuit, VOUT = VOVP, VIN rising threshold 5.7 Over-Temperature TOT Rising Temperature 165 °C 25 °C OT Hysteresis TOT-HYS 6.0 V Digital Logic Pins — ENM, ENS, BANK2, AND BANK1 Input High Threshold VIH VIN = 5.5V 1.4 V Input Low Threshold VIL VIN = 2.9V 0.4 V Input High Current IIH VIN = 5.5V 1 µA Input Low Current IIL VIN = 5.5V 1 µA Notes: (1) Guaranteed by design (2) Current matching equals ± [IBL(MAX) - IBL(MIN] / [IBL(MAX) + IBL(MIN)]. (3) Test voltage is VOUT = 4.0V — a relatively extreme LED voltage used to force a transition during test. Typically VOUT = 3.2V for white LEDs. (4) The settling time is affected by the magnitude of change in the PWM duty cycle. SC656 Typical Characteristics CIN = COUT= C1 = C2 = 2.2µF — 0603 size (1608 metric) Backlight Accuracy (7 LEDs) — 25mA Each VOUT = 3.56V, IOUT = 175mA, 25°C 8 6 6 4 4 2 MAX LED 0 MIN LED -2 VOUT = 3.56V, IOUT = 175mA, 25°C 8 Backlight Matching (%� Backlight Accuracy (%� Backlight Matching (7 LEDs) — 25mA Each -4 2 0 -2 -4 -6 -6 -8 4.2 3.9 3.6 VIN (V� 3.3 3 -8 2.7 4.2 Backlight Accuracy (7 LEDs) — 12mA Each 8 4 MAX LED 2 MIN LED 0 -2 -4 3.3 3 2.7 VOUT = 3.42V, IOUT = 84mA, 25°C 4 2 0 -2 -4 -6 -6 4.2 3.9 3.6 VIN (V� 3.3 3 -8 2.7 4.2 Backlight Accuracy (7 LEDs) — 5mA Each 8 VOUT = 3.28V, IOUT = 35mA, 25°C 8 3.6 VIN (V� 3.3 3 2.7 VOUT = 3.28V, IOUT = 35mA, 25°C 6 Backlight Matching (%� 4 MAX LED 2 0 MIN LED -2 -4 -6 -8 3.9 Backlight Matching (7 LEDs) — 5mA Each 6 Backlight Accuracy (%� VIN (V� 6 Backlight Matching (%� Backlight Accuracy (%� 6 -8 3.6 Backlight Matching (7 LEDs) — 12mA Each VOUT = 3.42V, IOUT = 84mA, 25°C 8 3.9 4 2 0 -2 -4 -6 4.2 3.9 3.6 VIN (V� 3.3 3 2.7 -8 4.2 3.9 3.6 VIN (V� 3.3 3 2.7 SC656 Typical Characteristics (continued) Backlight Current (7 LEDs) — 25mA Each Charge Pump Efficiency (7 LEDs) — 25mA Each 100 VOUT = 3.56V, IOUT = 175mA, 25°C 350 Battery Current (mA� 90 Efficiency (%� VOUT = 3.56V, IOUT = 175mA, 25°C 400 80 70 60 300 250 200 150 50 4.2 3.9 3.6 VIN (V� 3.3 3 2.7 100 4.2 VOUT = 3.42V, IOUT = 84mA, 25°C 3.6 VIN (V� 3.3 3 2.7 Backlight Current (7 LEDs) — 12mA Each Charge Pump Efficiency (7 LEDs) — 12mA Each 100 3.9 VOUT = 3.42V, IOUT = 84mA, 25°C 135 125 Battery Current (mA� 90 Efficiency (%� 115 80 105 70 60 50 95 85 4.2 3.9 3.6 VIN (V� 3.3 3 75 2.7 4.2 Charge Pump Efficiency (7 LEDs) — 5mA Each 100 VOUT = 3.28V, IOUT = 35mA, 25°C 80 VIN (V� 3.3 3 2.7 VOUT = 3.28V, IOUT = 35mA, 25°C 70 Battery Current (mA� Efficiency (%� 3.6 Backlight Current (7 LEDs) — 5mA Each 90 80 70 60 50 3.9 60 50 40 30 4.2 3.9 3.6 VIN (V� 3.3 3 2.7 20 4.2 3.9 3.6 VIN (V� 3.3 3 2.7 SC656 PWM Accuracy — 4.2V PWM Accuracy — 4.2V Typical Characteristics (continued) Percentage of Maximum IBL — 4.2V PWM Accuracy — 4.2V 20 VIN = 4.2V, RISET = 4.99kΩ, Calculated IBL = (100/RISET) x Duty Cycle 100 Percentage of Maximum IBL (%� Calculate� IBL (mA� 16 12 50kHz 8 32kHz 4 VIN = 4.2V, RISET = 4.99kΩ 80 60 50kHz 40 32kHz 20 200Hz 200Hz 0 4 0 8 12 Mea�ure� IBL (mA� PWM Accuracy — 4.2V 16 0 20 0 PWM Accuracy — 3.7V 20 100 Percentage of Maximum IBL (%� Calculate� IBL (mA� 16 12 50kHz 32kHz 4 0 0 200Hz 4 8 12 Mea�ure� IBL (mA� 60 50kHz 40 32kHz 20 0 100 Percentage of Maximum IBL (%� Calculate� IBL (mA� 12 0 32kHz 50kHz 200Hz 0 4 8 12 Mea�ure� IBL (mA� 200Hz 40 60 PWM Duty Cycle (%� 20 PWM80 Accuracy 100 — 4.2V Percentage of Maximum IBL — 2.9V 16 4 100 80 0 16 Accuracy 20 PWM — 4.2V VIN = 2.9V, RISET = 4.99kΩ, Calculated IBL = (100/RISET) x Duty Cycle 8 80 VIN = 3.7V, RISET = 4.99kΩ PWM Accuracy — 2.9V 20 PWM Accuracy — 4.2V Percentage of Maximum IBL — 3.7V VIN = 3.7V, RISET = 4.99kΩ, Calculated IBL = (100/RISET) x Duty Cycle 8 40 60 PWM Duty Cycle (%� 20 16 20 VIN = 2.9V, RISET = 4.99kΩ 80 50kHz 60 40 32kHz 20 0 0 200Hz 20 40 60 80 100 PWM Duty Cycle (%� SC656 Typical Characteristics (continued) Ripple — 1X Mode Ripple — 1X Mode VIN=4.2V, RISET = 4kΩ, 7 Backlights — 25 mA each, 25°C VIN=4.2V, RISET = 5.56kΩ, 7 Backlights — 18 mA each, 25°C VIN (100mV/div) VIN (100mV/div) VOUT (100mV/div) VOUT (100mV/div) Time (10µ������ s����� /div) Time (10µ������ s����� /div) Ripple — 1.5X Mode Ripple — 1.5X Mode VIN=3.2V, RISET = 4kΩ, 7 Backlights — 25 mA each, 25°C VIN=3.2V, RISET = 5.56kΩ, 7 Backlights — 18 mA each, 25°C VIN (100mV/div) VIN (100mV/div) VOUT (100mV/div) VOUT (100mV/div) Time (10µ������ s����� /div) Time (10µ������ s����� /div) Ripple — 2X Mode Ripple — 2X Mode VIN=2.9V, RISET = 4kΩ, 7 Backlights — 25 mA each, 25°C VIN=2.9V, RISET = 5.56kΩ, 7 Backlights — 18 mA each, 25°C VIN (100mV/div) VIN (100mV/div) VOUT (100mV/div) VOUT (100mV/div) Time (10µ������ s����� /div) Time (10µ������ s����� /div) SC656 Typical Characteristics (continued) Start-up — 0% to 100% Start-up — 0% to 50% VIN = 3.7V, 0 to 100% duty cycle, RISET = 4.99kΩ, no PWM VIN = 3.7V, 0 to 50% duty cycle, RISET = 4.99kΩ, fPWM = 32kHz 20mA 10mA IBL (10.0mA/div) IBL (10.0mA/div) 0mA— 0mA— VPWM (2V/div) VPWM (2V/div) 0V— 50% 0V— 100% Time (200m������ s����� /div) Time (200m������ s����� /div) IBL Settling Time — 100% to 50% IBL Settling Time — 50% to 100% VIN = 3.7V, RISET = 4.99kΩ, fPWM = 32kHz VIN = 3.7V, RISET = 4.99kΩ, fPWM = 32kHz 20mA IBL (10.0mA/div) 10mA 20mA 0mA— 0mA— VPWM (2V/div) VPWM (2V/div) 0V— 50% 10mA IBL (10.0mA/div) 100% 0V— 100% 50% Time (200m������ s����� /div) Time (200ms/div) DC Backlight Current — 32kHz PWM DC Backlight Current — 200Hz PWM VIN = 3.7V, 50% duty cycle, RISET = 4.99kΩ, IBL = 10mA VIN = 3.7V, 50% duty cycle, RISET = 4.99kΩ, IBL = 10mA IBL (10.0mA/div) IBL (10.0mA/div) 0mA— 0mA— VPWM (2V/div) VPWM (2V/div) 0V— 0V— Time (20μ������ s����� /div) Time (1m������ s����� /div) SC656 Pin Descriptions Pin # Pin Name Pin Function 1 ENS 2 IN 3 ISETM Current setting pin — connect a resistor between ISETM and IN to set the main bank LED current. 4 ISETS Current setting pin — connect a resistor between ISETS and IN to set the sub bank LED current. 5 BL1 Current sink output for backlight LED 1 — leave this pin open if unused 6 BL2 Current sink output for backlight LED 2 — leave this pin open if unused 7 BL3 Current sink output for main backlight LED 3 — leave this pin open if unused 8 BL4 Current sink output for main backlight LED 4 — leave this pin open if unused 9 BL5 Current sink output for main backlight LED 5 — leave this pin open if unused 10 BL6 Current sink output for main backlight LED 6 — leave this pin open if unused 11 BL7 Current sink output for main backlight LED 7 — leave this pin open if unused 12 BANK 1 Logic input that, along with BANK 2, controls the configuration of the main and sub bank functions. See application information section for details. 13 BANK 2 Logic input that, along with BANK 1, controls the configuration of the main and sub bank functions. See application information section for details. 14 GND Ground pin 15 C2- Negative connection to bucket capacitor 2 16 C1- Negative connection to bucket capacitor 1 17 C1+ Positive connection to bucket capacitor 1 18 C2+ Positive connection to bucket capacitor 2 19 OUT Charge pump output — all LED anode pins are connected to this pin. 20 ENM Enable pin for the main display LED bank — also used as the PWM dimming control input for this bank Enable pin for sub display LED bank — also used as the PWM dimming control input for this bank Battery voltage input 10 SC656 Block Diagram C1+ C1- C2+ C217 IN 2 GND 14 VIN 16 18 15 Fractional Charge Pump (1x, 1.5x, 2x) VOUT 19 OUT 5 BL1 6 BL2 7 BL3 8 BL4 9 BL5 10 BL6 11 BL7 Oscillator ENM ISETM 20 3 Control Interface, Level Converter, Digital LPF Current Setting Block 4 Current Setting Block ENS 1 Control Interface, Level Converter, Digital LPF BANK2 13 BANK1 12 ISETS LED Bank Configuration Logic 11 SC656 Applications Information General Description This design is optimized for handheld applications supplied from a single Li-Ion cell and includes the following key features: • • • A high efficiency fractional charge pump that supplies power to all LEDs Seven matched current sinks that control LED backlighting current, providing 500µA to 25mA per LED Two LED bank options with independent current settings and enable pins with PWM control of LED brightness. High Current Fractional Charge Pump The backlight outputs are supported by a high efficiency, high current fractional charge pump output at the OUT pin. The charge pump multiplies the input voltage by 1, 1.5, or 2 times. The charge pump switches at a fixed frequency of 250kHz in 1.5x and 2x modes and is disabled in 1x mode to save power and improve efficiency. The mode selection circuit automatically selects the 1x, 1.5x, or 2x mode based on circuit conditions such as LED voltage, input voltage, and load current. The 1x mode is the most efficient mode, followed by 1.5x and 2x modes. Circuit conditions such as low input voltage, high output current, or high LED voltage place a higher demand on the charge pump output. A higher numerical mode (1.5x or 2x) may be needed momentarily to maintain regulation at the OUT pin during intervals of high demand. The charge pump responds to momentary high demands, setting the charge pump to the optimum mode to deliver the output voltage and load current while optimizing efficiency. Hysteresis is provided to prevent mode toggling. The charge pump requires two bucket capacitors for proper operation. One capacitor must be connected between the C1+ and C1- pins and the other must be connected between the C2+ and C2- pins as shown in the Typical Application Circuit diagram. These capacitors should be equal in value, with a minimum capacitance of 1µF to support the charge pump current requirements. The device also requires at least 1µF capacitance on the IN pin and at least 1µF capacitance on the OUT pin to minimize noise and support the output drive requirements of IOUT up to 90mA. For output currents higher than 90mA, a nominal value of 2.2µF is recommended for COUT and CIN. Capacitors with X7R or X5R ceramic dielectric are strongly recommended for their low ESR and superior temperature and voltage characteristics. Y5V capacitors should not be used as their temperature coefficients make them unsuitable for this application. Capacitor Recommendations The full rated output of 175mA is achieved using 2.2µF 0603 size capacitors for input, output, and bucket capacitors. For applications which do not require the full 175mA output capability of the SC656 , a lower cost and smaller size capacitor option may be used. The 1µF capacitor in Table 1 may be used with no loss in accuracy, for up to 90mA of output current. Table 1 — Capacitor Recommendations Capacitance Value of CIN = COUT = C1 = C2 Size Code EIA (JIS) Application IOUT Limit 2.2µF 0603 (1608) up to IOUT = 175mA(1) 1.0µF 0402 (1005) up to IOUT = 90mA(2)(3) Notes: (1) Note that 2.2µF in the 0402 size is not equivalent to 2.2µF in the 0603 size, so 0402 may not be substituted for this application. (2) Larger size capacitors may be substituted. (3) Exceeding 90mA, or using less than 1.0µF, may cause excessive peak-to-peak output ripple, (>120mV), and some loss of accuracy in 1.5x mode. Bank Control Options The backlight drivers can be configured as a single bank or as two independently controlled banks. The configuration of the banks is determined by the BANK2 and BANK1 pins as described in Table 2. The ENM and ISETM pins control the brightness of LEDs assigned to the main bank, and the ENS and ISETS pins allow the sub bank current to be set independently as described in the following section. Note that when both BANK2 and BANK1 are set to 0, the sub bank feature is disabled. In this case, both ENS and ISETS should be tied to GND. 12 SC656 Applications Information (continued) Bank 2 Bank 1 Main Bank Sub Bank 0 0 BL1 — BL7 none 0 1 BL2 — BL7 BL1 1 0 BL3 — BL7 BL1 — BL2 1 1 BL4 — BL7 BL1 — BL3 LED Backlight Current Sinks The full scale backlight current (IFS_BL) is set via the current through the ISET pin controlling the corresponding LED bank (ISETM or ISETS) . The IFS_BL is regulated to the value of the ISETM or ISETS pin current multiplied by an internal gain of 100A/A. RISETM and RISETS are used to control the current into the ISETM and ISETS pins. The relationship between each resistance RISETx and the full scale backlight current is: RISETx = 100/IFS_BL All backlight current sinks have matched currents, even when there is a variation in the forward voltages (∆VF ) of the LEDs. A ∆VF of 1.0V is supported when the input voltage is at 2.9V. Higher ∆VF LED mis-match is supported when VIN is higher than 2.9V. All current sink outputs are compared and the lowest output is used for setting the voltage regulation at the OUT pin. This is done to ensure that sufficient bias exists for all LEDs. Any unused LED driver outputs must be left open for normal operation. PWM Operation A PWM signal on the ENM or ENS pin can be used to adjust the DC current through the LEDs. When the duty cycle is 100%, the backlight current through each LED (IBL) equals the full scale current set by the corresponding ISET pin. As the duty cycle decreases, the ENM or ENS input samples the control signal and converts the duty cycle to a DC current level. In conventional PWM controlled systems, the output current pulses on and off with the PWM input to achieve an average output current. Providing a DC current through the LEDs instead of a pulsed current provides an efficiency advantage over other PWM controlled systems by allowing the charge pump to remain in 1x mode longer since the maximum current is equal to the average current. PWM Sampling The sampling system that translates the PWM signal to a DC current requires the ENM and ENS pins to have a minimum high time tHIGH_MIN to set the DC level. High time less than tHIGH_MIN impacts the accuracy of the target I BL. The minimum duty cycle needed to support the minimum high time specification varies with the applied PWM frequency (see figure 1). Note that use of a lower PWM frequency, from 200Hz to 10kHz, will support lower minimum duty cycle and an extended backlight dimming range. 5 tHIGH_MIN = 1µs 4 Minimum Duty Cycle (%� Table 2 — Backlight Bank Configuration Settings 3 2 1 0 0.2 10 20 30 40 50 PWM Frequency (kHz� Figure 1 — Minimum Duty Cycle Shutdown Mode Shutdown occurs after ENM and ENS are both held low for an interval of 15ms or more. When the ENM and ENS pins are both held low for 5ms or less, the device will not shutdown. Protection Features The SC656 provides several protection features to safeguard the device from catastrophic failures. These features include: • • • • Output Open Circuit Protection Over-Temperature Protection Charge Pump Output Current Limit LED Float Detection 13 SC656 Applications Information (continued) Output Open Circuit Protection Over-Voltage Protection (OVP) at the OUT pin prevents the charge pump from producing an excessively high output voltage. In the event of an open circuit between the OUT pin and all current sinks (no loads connected), the charge pump runs in open loop and the voltage rises up to the OVP limit. OVP operation is hysteretic, meaning the charge pump will momentarily turn off until VOUT is sufficiently reduced. The maximum OVP threshold is 6.0V, allowing the use of a ceramic output capacitor rated at 6.3V. Charge Pump Output Current Limit The device limits the charge pump current at the OUT pin. If the OUT pin is shorted to ground, or VOUT is lower than 2.5V, the typical output current limit is 70mA. The output current is limited to 225mA when over loaded resistively with VOUT greater than 2.5. LED Float Detection Float detect is a fault detection feature of the LED backlight outputs. If an output is programmed to be enabled and an open circuit fault occurs at any backlight output, that output will be disabled to prevent a sustained output OVP condition from occurring due to the resulting open loop. Float detect ensures device protection but does not ensure optimum performance. Over-Temperature Protection The Over-Temperature (OT) protection circuit prevents the device from overheating and experiencing a catastrophic failure. When the junction temperature exceeds 165°C, the device goes into thermal shutdown with all outputs disabled until the junction temperature is reduced. All register information is retained during thermal shutdown. Hysteresis of 20°C is provided to ensure that the device cools sufficiently before re-enabling. PCB Layout Considerations The layout diagram in Figure 2 illustrates a proper two layer PCB layout for the SC656 and supporting components. Following fundamental layout rules is critical for achieving the performance specified in the Electrical Characteristics table. The following guidelines are recommended when developing a PCB layout: OUT Ground Plane COUT GND C1 C1- C1+ C2+ OUT ENM C2 CIN ENS IN C2- GND IN RSETM GND SC656 ISETM BANK2 ISETS BANK1 BL1 BL6 BL5 BL4 BL3 BL7 BL2 RSETS GND Figure 2 — Recommended Layout 14 SC656 Applications Information (continued) • • • • • Place all bucket and decoupling capacitors — C1, C2, CIN, and COUT — as close to the device as possible. All charge pump current passes through pins IN, OUT, C1+, C2+, C1-, and C2-. Therefore, ensure that all connections to these pins make use of wide traces so that the voltage drop on each connection is minimized. The GND pin should be connected to a ground plane using multiple vias to ensure proper thermal connection for optimal heat transfer. Make solid ground connections between the grounds of the COUT, CIN, and the GND pin on the device. Resistors RSETM and RSETS should be connected as shown in Figure 2, close to pins IN and ISET. The placement and routing shown minimizes parasitic capacitance at the ISET pin. Figure 3 — Layer 1 • • • Figure 3 shows the pads on layer 1 that should be connected with vias to layer 2. CIN, COUT and the GND pin all use vias to connect to the ground plane. Figure 4 shows layer 2, which functions as the ground plane. Layer 2 is also used for routing signals to pins ENM, ENS, BANK1, and BANK2. A void in the copper beneath the ISETM and ISETS pins serves to reduce capacitance coupled from these pins to ground. Avoid coupling noise to the ENM and ENS pins. This will help prevent unintended clocking of the PWM. The layout should be routed to achieve the least possible trace to trace capacitance between ENM and ENS. Also, minimize trace capacitance between ENM or ENS and any high speed signals. Figure 4 — Layer 2 15 SC656 Outline Drawing — MLPQ-UT-20 3x3 A D B DIM PIN 1 INDICATOR (LASER MARK) E A2 A aaa C C A1 SEATING PLANE A A1 A2 b D D1 E E1 e L N aaa bbb DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .020 .024 0.50 0.60 .000 .002 0.00 0.05 (.006) (0.152) .006 .008 .010 0.15 0.20 0.25 .114 .118 .122 2.90 3.00 3.10 .061 .067 .071 1.55 1.70 1.80 .114 .118 .122 2.90 3.00 3.10 .061 .067 .071 1.55 1.70 1.80 .016 BSC 0.40 BSC .012 .016 .020 0.30 0.40 0.50 20 20 .003 0.08 .004 0.10 D1 e LxN E/2 E1 2 1 N D/2 bxN bbb C A B NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3. DAP IS 1.90 x 1.90mm. 16 SC656 Land Pattern — MLPQ-UT-20 3x3 K DIMENSIONS R (C) H G Y X P Z DIM INCHES MILLIMETERS C G H K P R X Y Z (.114) (2.90) .083 .067 .067 .016 .004 .008 .031 .146 2.10 1.70 1.70 0.40 0.10 0.20 0.80 3.70 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 3. THERMAL VIAS IN THE LAND PATTERN OF THE EXPOSED PAD SHALL BE CONNECTED TO A SYSTEM GROUND PLANE. FAILURE TO DO SO MAY COMPROMISE THE THERMAL AND/OR FUNCTIONAL PERFORMANCE OF THE DEVICE. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805) 498-2111 Fax: (805) 498-3804 www.semtech.com 17