uClamp3324P Low Voltage TVS for ESD Protection PROTECTION PRODUCTS - MicroClampTM Description Features The µClamp series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. TM Transient protection for data lines to The µClampTM3324P is a solid-state device designed specifically for transient suppression. It is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. Mechanical Characteristics The µClamp3324P may be used to meet the immunity requirements of IEC 61000-4-2, level 4 (±15kV air, ±8kV contact discharge). The “flow-thru” design of the device results in enhanced ESD performance due to reduced board trace inductance. The result is lower clamping voltage and a higher level of protection when compared to conventional TVS devices. Circuit Diagram 8 2 SLP2116P8 package RoHs Compliant Nominal Dimensions: 2.1 x 1.6 x 0.58 mm Lead Pitch: 0.5mm Lead Finish: NiPd Marking : Orientation Mark and Marking Code Packaging : Tape and Reel per EIA 481 Applications The µClamp3324P is in an 8-pin, RoHs compliant, SLP2116P8 package. It measures 2.1 x 1.6 x 0.58mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPd. The small package makes it ideal for use in portable electronics such as cell phones, digital still cameras, and notebook computers. 1 IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Small package for use in portable electronics Protects four I/O Working voltage: 3.3V Flow thru design for easy layout Low leakage current Low operating and clamping voltages Solid-state silicon-avalanche technology Cellular Handsets & Accessories Personal Digital Assistants (PDA’s) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Package 7 3 6 4 2.10 5 1 2 1.60 0.50 BSC 0.58 GND Device Schematic Revision 01/05/2005 8 Pin SLP package (Bottom Side View) 2.1 x 1.6 x 0.58mm (Nominal) 1 www.semtech.com uClamp3324P PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20µs) Pp k 40 Watts Maximum Peak Pulse Current (tp = 8/20µs) Ip p 5 Amps ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) V PP +/- 20 +/- 15 kV Op erating Temp erature TJ -55 to +125 °C TSTG -55 to +150 °C Storage Temp erature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Maximum Units 3.3 V Punch-Through Voltage V PT IPT = 2µA 3.5 V Snap -Back Voltage VSB ISB = 50mA 2.8 V Reverse Leakage Current IR VRWM = 3.3V Clamp ing Voltage VC Clamp ing Voltage 0.5 µA IPP = 1A, tp = 8/20µs Any I/O to Gnd 5.5 V VC IPP = 5A, tp = 8/20µs Any I/O to Gnd 8.0 V Reverse Clamp ing Voltage VCR IPP = 1A, tp = 8/20µs Any I/O to Gnd 2.4 V 30 pF Junction Cap acitance Cj 2005 Semtech Corp. 0.05 I/O p in to Gnd VR = 0V, f = 1MHz 25 I/O p in to Gnd VR = 3.3V, f = 1MHz 14 2 pF www.semtech.com uClamp3324P PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 1 90 % of Rated Power or I PP Peak Pulse Power - P PP (kW) 100 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Duration - tp (µs) Forward Voltage vs. Forward Current Clamping Voltage vs. Peak Pulse Current 16 8 14 6 Forward Voltage - VF (V) Clamping Voltage (V) 12 10 8 6 4 Waveform Parameters: tr = 8µs td = 20µs 2 4 2 Waveform Parameters: tr = 8µs td = 20µs 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 Forward Current - IF (A) Peak Pulse Current (A) ESD Clamping (8kV Contact per IEC 61000-4-2) Junction Capacitance vs. Reverse Voltage 1.2 f = 1 MHz 1.1 Normalized Capcitance - Cj (pF) 1 Line-to-Gnd 0.9 Line-to-Line 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 Reverse Voltage - VR (V) 2005 Semtech Corp. 3 www.semtech.com uClamp3324P PROTECTION PRODUCTS Applications Information Figure 1 - Circuit Diagram Device Connection Options The µClamp3324P is designed to protect four lines. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. 1 Flow Thru Layout The µClamp3324P is designed for ease of PCB layout by allowing the traces to enter one side of the device and exit the other side. Figure 2 shows the recommended way to design the PCB board traces in order to use the flow through layout. The solid line represents the PCB trace. Note that the PCB traces enter at the input pin and exit from the opposite pin. (pin 1 to pin 8, pin 2 to pin 9, pin 3 to pin 6, pin 4 to pin 5). For example, line 1 enters at pin 1 and exits at Pin 8. The bottom tab is connected to ground. This connection should be made directly to a ground plane on the board for best results. The path length is kept as short as possible to minimize parasitic inductance. 2 7 3 6 4 5 GND Figure 2 - Layout Example In 1 Out 1 Out 2 In 2 In 3 In 4 EPD TVS Characteristics These devices are constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, these devices can effectively operate at 3.3V while maintaining excellent electrical characteristics. Out 3 Out 4 Figure 3 - EPD TVS IV Characteristic Curve IPP The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while maintaining the capability to absorb high transient currents. 2005 Semtech Corp. 8 ISB IPT VF IR VRWM VSB VPT VC IF 4 www.semtech.com uClamp3324P PROTECTION PRODUCTS Outline Drawing - SLP2116P8 A B D DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX E PIN 1 INDICATOR (LASER MARK) A SEATING PLANE aaa C A2 A1 C D1 A A1 A2 b D D1 E E1 e L N aaa bbb .020 .023 .026 - .001 .002 (.006) .007 .010 .012 .079 .083 .087 .061 .067 .071 .059 .063 .067 .010 .016 .020 .020 BSC .011 .013 .015 6 .003 .004 0.50 0.58 0.65 0.00 .003 0.05 (0.15) 0.20 0.25 0.30 2.00 2.10 2.20 1.55 1.70 1.80 1.50 1.60 1.70 0.25 0.40 0.50 0.50 BSC 0.28 0.33 0.38 6 0.08 0.10 1 2 LxN E/2 E1 N bxN bbb e C A B D/2 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP2116P8 P X DIMENSIONS Z F G (C) Y DIM B C F G P X Y Z INCHES .071 .060 .018 .035 .020 .012 .025 .085 MILLIMETERS 1.80 1.52 0.45 0.89 0.50 0.30 0.63 2.15 B NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2005 Semtech Corp. 5 www.semtech.com uClamp3324P PROTECTION PRODUCTS Marking Ordering Information 3324P PIN 1 INDICATOR Part Number Working Voltage uClamp 3324P.TCT 3.3V Device Qty per Marking Reel 3324P Reel Size 3,000 7 Inch MicroClamp, uClamp and µClamp are marks of Semtech Corporation Tape and Reel Specification 3324P 3324P 3324P 3324P 3324P 3324P Device Orientation in Tape A0 1.96 +/-0.05 mm B0 K0 2.31 +/-0.05 mm 0.74 +/-0.05 mm Tape Width B, (Max) D D1 8 mm 4.2 mm (.165) 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) 0.8 mm ±0.05 (.031) E 1.750±.10 mm (.069±.004) F K (MAX) P P0 P2 T(MAX) W 3.5±0.05 mm (.138±.002) 2.4 mm (.094) 4.0±0.1 mm (.157±.004) 4.0±0.1 mm (.157±.004) 2.0±0.05mm (.079±.002) 0.4 mm (.016) 8.0 mm + 0.3 mm - 0.1 mm (.312±.012) Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 2005 Semtech Corp. 6 www.semtech.com