SIRENZA SBB

SBB-1089Z
50 - 850 MHz, Cascadable Active Bias
InGaP HBT MMIC Amplifier
Product Description
Sirenza Microdevices’ SBB-1089Z is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-1089Z does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-1089Z product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
Pb
RoHS Compliant
& Green Package
Product Features
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
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•
•
•
•
•
Gain & Return Loss vs. Frequency (w/ App. Ckt.)
35
25
S21
OIP3 = 43.1 dBm @ 240MHz
P1dB = 19.6 dBm @ 500MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design & Bias Circuit
Low Thermal Resistance
MSL 1 moisture rating
dB
15
Applications
5
• Receiver IF Amplifier
• Cellular, PCS, GSM, UMTS
• Wireless Data, Satellite Terminals
-5
S11
-15
-25
S22
-35
50
150
250
350
450
550
Frequency (MHz)
Symbol
850
Units
Frequency
Min.
Typ.
Max.
dB
70 MHz
240 MHz
400 MHz
14
14
15.5
15.5
15.5
17
17
dBm
70 MHz
240 MHz
400 MHz
18
19
19
19
Third Order Intercept Point
dBm
70 MHz
240 MHz
400 MHz
38.5
42
43
40.5
S11, S22: Minimum 10dB Return Loss (typ.)
MHz
Small Signal Gain
P1dB
Output Power at 1dB Compression
Bandwidth
750
Parameters
S21
IP3
650
IRL
Input Return Loss
ORL
Output Return Loss
|S12|
Reverse Isolation
NF
Noise Figure
dB
VD
Device Operating Voltage
V
ID
RTH, j-l
Test Conditions:
dB
Device Operating Current
TL = 25°C
70 -500MHz
14
dB
70 -500MHz
12
dB
70 -500MHz
18
500 MHz
3.5
4.2
5
5.3
90
98
mA
Thermal Resistance (junction - lead)
VD = 5V
50 - 850
82
°C/W
18
16
48.8
ID = 90mA Typ.
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Tested with Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103998 Rev D
SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies (With 240 MHz Application Circuit)
Frequency (MHz)
Symbol
S21
Parameter
Small Signal Gain
Unit
50
70
100
240
400
500
850
dB
16
15.5
15.5
15.5
15.5
15.5
15
OIP3
Output Third Order Intercept Point
dBm
41.5
42
43
43
41
40
35
P1dB
Output Power at 1dB Compression
dBm
19
19
19
19
19
19
18
S11
Input Return Loss
dB
13
16
17
19
19
18
15
S22
Output Return Loss
dB
18
20
21
23
24
23
17
S12
Reverse Isolation
dB
18
18
18
18
18
18
18
NF
Noise Figure
3.5
3.3
3.2
3.1
3.2
3.2
3.4
Test Conditions:
dB
ID = 90mA Typ.
VCC = 5V
TL = 25°C
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
Noise Figure vs. Frequency
6
Data on Charts taken with 240 MHz App. Ckt.
5
dB
4
3
2
25C
P1dB vs. Frequency
-40C
1
25
85C
0
150
250
350
450
550
Frequency (MHz)
650
750
850
20
dBm
50
15
OIP3 vs. Frequency
50
25C
-40C
10
85C
45
dBm
5
50
40
150
250
350
450
550
Frequency (MHz)
650
750
850
35
25C
30
-40C
85C
25
50
150
303 S. Technology Ct.
Broomfield, CO 80021
250
350
450
550
Frequency (MHz)
650
750
850
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103998 Rev D
SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier
S-Parameters over Temperature (Bias Tee)
S11 vs. Frequency
-5
S21 vs. Frequency
25
-10
20
dB
dB
-15
15
-20
25C
10
25C
-25
-40C
-40C
85C
85C
5
-30
50
150
250
350
450
550
Frequency (MHz)
650
750
50
850
S12 vs. Frequency
150
250
350
450
550
Frequency (MHz)
750
850
750
850
S22 vs. Frequency
-5
-5
650
-10
-10
-15
dB
dB
-15
-20
-20
-25
25C
25C
-25
-40C
-40C
-30
85C
85C
-30
-35
50
150
250
350
450
550
Frequency (MHz)
650
750
850
50
150
250
350
450
550
Frequency (MHz)
650
Device Current over Temperature (Bias Tee)
Current vs. Voltage Over Temp. (Bias Tee)
120
-40C
100
Current (mA)
25C
85C
80
60
40
20
0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Voltage (V)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-103998 Rev D
SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier
240 MHz Application Circuit S-Parameters over Temperature
S11 vs. Frequency
-5
S21 vs. Frequency
25
20
-15
15
dB
db
-10
-20
10
25C
25C
-25
5
-40C
-40C
85C
85C
-30
0
50
150
250
350
450
550
Frequency (GHz)
650
750
850
50
S12 vs. Frequency
-5
-5
-10
-10
-15
-15
150
250
350
450
550
Frequency (GHz)
650
750
850
650
750
850
S22 vs. Frequency
dB
dB
25C
-20
-25
-40C
85C
-20
-25
25C
-40C
-30
-30
85C
-35
-35
50
150
250
350
450
550
Frequency (GHz)
650
750
50
850
150
250
350
450
550
Frequency (GHz)
Device Current over Temperature (w/Application Circuit)
Current vs. Voltage Over Temp. (App. Ckt.)
120
-40C
100
Current (mA)
25C
80
85C
60
40
20
0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Voltage (V)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-103998 Rev D
SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier
Application Schematic
Application Circuit Element Values
Vs
1uF
1200pF
4
1
RF in
Lc
Reference
Designator
Frequency (MHz)
50 to 850
CB
8200pF
LC
1200nH LS Coilcraft
LS
2.7nH Toko
3
RF out
SBB-1089
Ls
Cb
2
Cb
Absolute Maximum Ratings
+
Evaluation Board Layout
Parameter
Absolute Limit
Ma. Dvice Current (ID)
110 mA
Max Device Voltage (VD)
5.5 V
Max. RF Input Power
+12 dBm
Max. Operating Dissipated
Power
0.61 W
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
TL=TLEAD
IDVD < (TJ - TL) / RTH, j-l
ESD Class 1C
Appropriate precautions in handling, packaging and testing
devices must be observed.
Mounting Instructions
1. Solder the copper pad on the backside of the device package to
the ground plane.
2. Use a large ground pad area with many plated through-holes as
shown.
3. We recommend 1 or 2 ounce copper. Measurement for this
datasheet were made on a 31 mil thick FR-4 board with 1
ounce copper on both sides.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
MSL (Moisture Sensitivity Level) Rating: Level 1
http://www.sirenza.com
EDS-103998 Rev D
SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier
Suggested PCB Pad Layout
Dimensions in inches [millimeters]
Nominal Package Dimensions
Dimensions in inches (millimeters)
Refer to package drawing posted at www.sirenza.com for tolerances
Bottom View
Side View
Package Marking
4
3
1
1
2
BB1Z
2
3
Lead Free
Pin #
Function
1
RF IN
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
2, 4
GND
Connection to ground. Use via holes
for best performance to reduce lead
inductance as close to ground leads as
possible.
Part Number Ordering Information
Part Number
Reel Size
Devices / Reel
SBB-1089Z
7"
1000
3
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
6
Description
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
http://www.sirenza.com
EDS-103998 Rev D