SBB-1089Z 50 - 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier Product Description Sirenza Microdevices’ SBB-1089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB-1089Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB-1089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. Pb RoHS Compliant & Green Package Product Features The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. • • • • • • • Gain & Return Loss vs. Frequency (w/ App. Ckt.) 35 25 S21 OIP3 = 43.1 dBm @ 240MHz P1dB = 19.6 dBm @ 500MHz Single Fixed 5V Supply Robust 1000V ESD, Class 1C Patented Thermal Design & Bias Circuit Low Thermal Resistance MSL 1 moisture rating dB 15 Applications 5 • Receiver IF Amplifier • Cellular, PCS, GSM, UMTS • Wireless Data, Satellite Terminals -5 S11 -15 -25 S22 -35 50 150 250 350 450 550 Frequency (MHz) Symbol 850 Units Frequency Min. Typ. Max. dB 70 MHz 240 MHz 400 MHz 14 14 15.5 15.5 15.5 17 17 dBm 70 MHz 240 MHz 400 MHz 18 19 19 19 Third Order Intercept Point dBm 70 MHz 240 MHz 400 MHz 38.5 42 43 40.5 S11, S22: Minimum 10dB Return Loss (typ.) MHz Small Signal Gain P1dB Output Power at 1dB Compression Bandwidth 750 Parameters S21 IP3 650 IRL Input Return Loss ORL Output Return Loss |S12| Reverse Isolation NF Noise Figure dB VD Device Operating Voltage V ID RTH, j-l Test Conditions: dB Device Operating Current TL = 25°C 70 -500MHz 14 dB 70 -500MHz 12 dB 70 -500MHz 18 500 MHz 3.5 4.2 5 5.3 90 98 mA Thermal Resistance (junction - lead) VD = 5V 50 - 850 82 °C/W 18 16 48.8 ID = 90mA Typ. OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Tested with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-103998 Rev D SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies (With 240 MHz Application Circuit) Frequency (MHz) Symbol S21 Parameter Small Signal Gain Unit 50 70 100 240 400 500 850 dB 16 15.5 15.5 15.5 15.5 15.5 15 OIP3 Output Third Order Intercept Point dBm 41.5 42 43 43 41 40 35 P1dB Output Power at 1dB Compression dBm 19 19 19 19 19 19 18 S11 Input Return Loss dB 13 16 17 19 19 18 15 S22 Output Return Loss dB 18 20 21 23 24 23 17 S12 Reverse Isolation dB 18 18 18 18 18 18 18 NF Noise Figure 3.5 3.3 3.2 3.1 3.2 3.2 3.4 Test Conditions: dB ID = 90mA Typ. VCC = 5V TL = 25°C OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Noise Figure vs. Frequency 6 Data on Charts taken with 240 MHz App. Ckt. 5 dB 4 3 2 25C P1dB vs. Frequency -40C 1 25 85C 0 150 250 350 450 550 Frequency (MHz) 650 750 850 20 dBm 50 15 OIP3 vs. Frequency 50 25C -40C 10 85C 45 dBm 5 50 40 150 250 350 450 550 Frequency (MHz) 650 750 850 35 25C 30 -40C 85C 25 50 150 303 S. Technology Ct. Broomfield, CO 80021 250 350 450 550 Frequency (MHz) 650 750 850 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-103998 Rev D SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier S-Parameters over Temperature (Bias Tee) S11 vs. Frequency -5 S21 vs. Frequency 25 -10 20 dB dB -15 15 -20 25C 10 25C -25 -40C -40C 85C 85C 5 -30 50 150 250 350 450 550 Frequency (MHz) 650 750 50 850 S12 vs. Frequency 150 250 350 450 550 Frequency (MHz) 750 850 750 850 S22 vs. Frequency -5 -5 650 -10 -10 -15 dB dB -15 -20 -20 -25 25C 25C -25 -40C -40C -30 85C 85C -30 -35 50 150 250 350 450 550 Frequency (MHz) 650 750 850 50 150 250 350 450 550 Frequency (MHz) 650 Device Current over Temperature (Bias Tee) Current vs. Voltage Over Temp. (Bias Tee) 120 -40C 100 Current (mA) 25C 85C 80 60 40 20 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Voltage (V) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-103998 Rev D SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier 240 MHz Application Circuit S-Parameters over Temperature S11 vs. Frequency -5 S21 vs. Frequency 25 20 -15 15 dB db -10 -20 10 25C 25C -25 5 -40C -40C 85C 85C -30 0 50 150 250 350 450 550 Frequency (GHz) 650 750 850 50 S12 vs. Frequency -5 -5 -10 -10 -15 -15 150 250 350 450 550 Frequency (GHz) 650 750 850 650 750 850 S22 vs. Frequency dB dB 25C -20 -25 -40C 85C -20 -25 25C -40C -30 -30 85C -35 -35 50 150 250 350 450 550 Frequency (GHz) 650 750 50 850 150 250 350 450 550 Frequency (GHz) Device Current over Temperature (w/Application Circuit) Current vs. Voltage Over Temp. (App. Ckt.) 120 -40C 100 Current (mA) 25C 80 85C 60 40 20 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Voltage (V) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-103998 Rev D SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier Application Schematic Application Circuit Element Values Vs 1uF 1200pF 4 1 RF in Lc Reference Designator Frequency (MHz) 50 to 850 CB 8200pF LC 1200nH LS Coilcraft LS 2.7nH Toko 3 RF out SBB-1089 Ls Cb 2 Cb Absolute Maximum Ratings + Evaluation Board Layout Parameter Absolute Limit Ma. Dvice Current (ID) 110 mA Max Device Voltage (VD) 5.5 V Max. RF Input Power +12 dBm Max. Operating Dissipated Power 0.61 W Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: TL=TLEAD IDVD < (TJ - TL) / RTH, j-l ESD Class 1C Appropriate precautions in handling, packaging and testing devices must be observed. Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this datasheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 MSL (Moisture Sensitivity Level) Rating: Level 1 http://www.sirenza.com EDS-103998 Rev D SBB-1089Z 50-850 MHz Cascadable MMIC Amplifier Suggested PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances Bottom View Side View Package Marking 4 3 1 1 2 BB1Z 2 3 Lead Free Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Part Number Ordering Information Part Number Reel Size Devices / Reel SBB-1089Z 7" 1000 3 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 Description RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. http://www.sirenza.com EDS-103998 Rev D