SGA-5586 RoHS Compliant & Green Package Product Description SGA-5586Z The SGA-5586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Product Features • Now available in Lead Free, RoHS Compliant, & Green Packaging • High Gain : 18.7 dB at 1950 MHz • Cascadable 50 Ohm • Operates From Single Supply • Low Thermal Resistance Package Gain & Return Loss vs. Frequency VD= 3.9 V, ID= 60 mA (Typ.) 32 Pb 0 Gain (dB) 24 -10 IRL 16 -20 ORL TL=+25ºC -30 8 0 Return Loss (dB) GAIN Applications • • • • -40 0 1 2 3 Frequency (GHz) Symbol G 4 PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 5 Parameter Small Signal Gain Units Frequency Min. Typ. dB dB dB 850 MHz 1950 MHz 2400 MHz 23.1 18.7 17.3 P1dB Output Pow er at 1dB Compression dBm dBm 850 MHz 1950 MHz 18.1 15.8 OIP3 Output Third Order Intercept Point dBm dBm 850 MHz 1950 MHz 31.6 28.8 Bandw idth Determined by Return Loss (>10dB) IRL MHz Max. 4000 Input Return Loss dB 1950 MHz 12.2 Output Return Loss dB 1950 MHz 20.7 NF Noise Figure dB 1950 MHz 2.6 VD Device Operating Voltage V 3.5 3.9 4.2 ID Device Operating Current mA 54 60 66 ORL RTH, j-l Thermal Resistance (junction to lead) Test Conditions: VS = 8 V RBIAS = 68 Ohms °C/W ID = 60 mA Typ. TL = 25ºC 97 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101267 Rev. D SGA-5586 DC-4000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol G Parameter Unit 100 Frequency (MHz) Frequency Frequency (MHz)(MHz) 500 850 1950 2400 3500 dB 26.0 24.7 23.1 18.7 17.3 14.8 31.5 31.6 28.8 27.1 Small Signal Gain OIP3 Output Third Order Intercept Point dBm P1dB Output Power at 1dB Compression dBm 18.3 18.1 15.8 14.4 IRL Input Return Loss dB 22.3 13.9 11.8 12.2 12.3 10.6 ORL Output Return Loss dB 19.8 18.6 18.8 20.7 17.5 14.2 S12 Reverse Isolation dB 27.7 27.4 27.0 23.4 21.5 17.5 NF Noise Figure dB 2.5 2.5 2.6 3.0 VSS== 88 V V V RBIAS = 75 Ohms R BIAS= 39 Ohms Test Conditions: 60 mA mA Typ. Typ. IIDD == 80 25ºC TTLL == 25ºC OIP33 Tone Tone Spacing Spacing == 11 MHz, MHz, Pout Pout per per tone tone == 00 dBm dBm OIP 50 Ohms Ohms ZZSS== ZZLL== 50 Absolute Maximum Ratings Noise Figure vs. Frequency VD= 3.9 V, ID= 60 mA Noise Figure (dB) 5 Parameter Absolute Limit Max. Device Current (ID) 120 mA Max. Device Voltage (VD) 6V 4 Max. RF Input Power +16 dBm 3 Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 1 TL=+25ºC 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency P1dB vs. Frequency VD= 3.9 V, ID= 60 mA VD= 3.9 V, ID= 60 mA 20 35 18 P1dB (dBm) OIP3 (dBm) 30 25 20 16 14 12 TL=+25ºC TL=+25ºC 15 10 0 0.5 1 1.5 2 Frequency (GHz) 303 Technology Court, Broomfield, CO 80021 2.5 3 0 Phone: (800) SMI-MMIC 2 0.5 1 1.5 2 Frequency (GHz) 2.5 3 http://www.sirenza.com EDS-101267 Rev. D SGA-5586 DC-4000 MHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency |S | vs. Frequency VD= 3.9 V, ID= 60 mA (Typ.) VD= 3.9 V, ID= 60 mA (Typ.) 21 32 11 0 -10 S11(dB) S21(dB) 24 16 8 0 0 1 2 3 Frequency (GHz) -30 +25°C -40°C +85°C TL 4 -20 -40 5 0 1 4 |S | vs. Frequency VD= 3.9 V, ID= 60 mA (Typ.) VD= 3.9 V, ID= 60 mA (Typ.) 5 22 0 -15 -10 S22(dB) S12(dB) 2 3 Frequency (GHz) |S | vs. Frequency 12 -10 +25°C -40°C +85°C TL -20 -25 -20 -30 +25°C -40°C +85°C TL -30 0 1 2 3 Frequency (GHz) 4 +25°C -40°C +85°C TL -40 5 0 1 2 3 Frequency (GHz) 4 5 NOTE: Full S-parameter data available at www.sirenza.com 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101267 Rev. D SGA-5586 DC-4000 MHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit Application Circuit Element Values R BIAS VS Frequency (Mhz) 1 uF Reference Designator 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD 1000 pF LC 4 1 SGA-5586 3 RF in RF out CB 2 CB Recommended Bias Resistor Values for ID=60mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS CD A55 LC 130 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking 3 Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. 3 4 100 12 V Mounting Instructions 1000 pF CB 2 68 10 V 1 uF RBIAS A55 36 8V Note: RBIAS provides DC bias stability over temperature. VS 4 6V 55Z 2 3 1 Description RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 1 Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Reel Size Devices/Reel See Application Note AN-075 SGA-5586 13" 3000 for Package Outline Drawing SGA-5586Z 13" 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101267 Rev. D