SGA-6289 Product Description DC-4500 MHz, Cascadable SiGe HBT MMIC Amplifier Sirenza Microdevices SGA-6289 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 75mA , the SGA6289 typically provides +34.4 dBm output IP3, 13.9 dB of gain, and +18.1 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Product Features Broadband Operation: DC-4500 MHz Cascadable 50 Ohm Patented SiGe Technology Gain & Return Loss vs. Frequency VD= 4.0 V, ID= 75 mA (Typ.) GAIN 15 Gain (dB) Operates From Single Supply Low Thermal Resistance Package 0 -10 IRL 10 -20 ORL 5 -30 0 Return Loss (dB) 20 Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite -40 0 1 2 3 4 5 Frequency (GHz) Sy mbol G Parameter Small Signal Gain Units Frequency Min. Ty p. Max. dB 850 M Hz 1950 M Hz 2400 M Hz 12.3 13.9 12.6 12.2 15.1 P1dB Output Pow er at 1dB Compression dBm 850 M Hz 1950 M Hz 18.1 17.8 OIP3 Output Third Order Intercept Point dBm 850 M Hz 1950 M Hz 34.4 32.0 Bandw idth Determined by Return Loss (>10dB) IRL M Hz 4500 Input Return Loss dB 1950 M Hz 18.5 Output Return Loss dB 1950 M Hz 13.1 NF Noise Figure dB 1950 M Hz 4.0 VD Device Operating Voltage V ID Device Operating Current mA ORL RTH, j-l Thermal Resistance (junction to lead) Test Conditions: VS = 8 V RBIAS = 51 Ohms °C/W ID = 75 mA Typ. TL = 25ºC 3.6 4.0 4.4 67 75 83 97 OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-100619 Rev E Preliminary SGA-6289 DC-4500 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Sy mbol G Parameter Frequency (MHz) Frequency Frequency (MHz)(MHz) 850 1950 Unit 100 500 2400 3500 dB 13.5 14.0 13.9 12.6 12.2 10.6 36.0 35.0 34.4 32.0 31.2 28.2 Small Signal Gain OIP3 Output Third Order Intercept Point dBm P1dB Output Pow er at 1dB Compression dBm 18.7 18.6 18.1 17.8 17.1 15.6 IRL Input Return Loss dB 20.8 19.5 19.3 18.5 17.9 14.7 ORL Output Return Loss dB 32.8 25.6 20.6 13.1 12.2 12.6 S12 Reverse Isolation dB 17.4 18.6 18.9 19.2 19.1 18.1 NF Noise Figure dB 3.9 3.8 3.7 4.0 4.6 5.1 VSS== 88 V V V Test TestConditions: Conditions: = 51 Ohms RBIAS R BIAS= 39 Ohms 75 mA mA Typ. Typ. IIDD == 80 25ºC TTLL == 25ºC OIP33 Tone Tone Spacing Spacing == 11 MHz, MHz, Pout Pout per per tone tone == 00 dBm dBm OIP 50 Ohms Ohms ZZSS== ZZLL== 50 Absolute Maximum Ratings Noise Figure vs. Frequency VD= 4.0 V, ID= 75 mA Noise Figure (dB) 7 6 TL=+25ºC 3 1 2 3 Frequency (GHz) 4 150 mA Max. Device Voltage (VD) 6V Max. RF Input Pow er +18 dBm +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. 2 0 Absolute Limit Max. Junction Temp. (TJ) 5 4 Parameter Max. Device Current (ID) 5 Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency P1dB vs. Frequency VD= 4.0 V, ID= 75 mA VD= 4.0 V, ID= 75 mA 40 20 +25°C TL 18 -40°C +85°C P1dB(dBm) OIP3(dBm) 36 32 28 16 14 +25°C 24 12 20 10 TL -40°C +85°C 0.0 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) 522 Almanor Ave., Sunnyvale, CA 94085 3.0 3.5 0.0 Phone: (800) SMI-MMIC 2 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) 3.0 3.5 http://www.sirenza.com EDS-100619 Rev D Preliminary SGA-6289 DC-4500 MHz Cascadable MMIC Amplifier |S | vs. Frequency |S | vs. Frequency 21 +25°C -40°C +85°C TL 16 VD= 4.0 V, ID= 75 mA 0 -10 |S11| (dB) 20 |S21| (dB) 11 VD= 4.0 V, ID= 75 mA 12 -20 -30 8 +25°C -40°C +85°C TL -40 4 0 1 2 3 Frequency (GHz) 4 0 5 1 |S | vs. Frequency 5 22 VD= 4.0 V, ID= 75 mA 0 -10 |S22| (dB) -15 |S12| (dB) 4 |S | vs. Frequency 12 VD= 4.0 V, ID= 75 mA -10 2 3 Frequency (GHz) -20 -25 -30 0 1 2 3 Frequency (GHz) -30 +25°C -40°C +85°C TL 4 -20 +25°C -40°C +85°C TL -40 5 0 VD vs. ID over Temperature for fixed VS= 8V , RBIAS= 51 Ohms * 1 2 3 Frequency (GHz) 4 5 VD vs. Temperature for Constant ID = 75 mA 4.6 90 85 4.4 +85°C VD (Volts) ID(mA) 80 +25°C 75 -40°C 70 4.2 4.0 3.8 65 3.6 60 3.6 3.8 4.0 4.2 4.4 -40 VD(Volts) -15 10 35 Temperature (°C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-100619 Rev D Preliminary SGA-6289 DC-4500 MHz Cascadable MMIC Amplifier Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 4 1 SGA-6289 3 RF in RF out CB 2 CB Frequency (Mhz) Reference Designator R ecommended B ias R esistor Values for ID=75mA R BIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 27 8V 51 10 V 82 12 V 110 Note: RBIAS provi des D C bi as stabi li ty over temperature. VS RBIAS 1 uF Mounting Instructions 1000 pF A62 6V LC CD 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated CB CB through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an A62 designator on the top surface of the package. 4 A62 Description 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Function 3 3 3 2 2 1 1 Pin # Part Number Reel Size Devices/Reel SGA-6289 13" 3000 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-100619 Rev D Preliminary SGA-6289 DC-4500 MHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. Bottom View Side View 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-100619 Rev D