STMICROELECTRONICS ST13003D-K

ST13003D-K
High voltage fast-switching NPN power transistor
Features
■
High voltage capability
■
Low spread of dynamic parameters
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
■
Integrated antiparallel collector-emitter diode
Applications
■
3
Electronic ballast for fluorescent lighting
2
1
SOT-32
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
ST13003D-K
13003D
SOT-32
cardboard box
November 2007
Rev 1
1/8
www.st.com
8
Electrical ratings
1
ST13003D-K
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Value
Unit
VCES
Collector-emitter voltage (V BE = 0)
700
V
VCEO
Collector-emitter voltage (IB = 0)
400
V
VEBO
Emitter-base voltage
(IC = 0, IB = 0.75A, tp < 10µs)
V(BR)EBO
V
1.5
A
3
A
Base current
0.75
A
IBM
Base peak current (tP < 5ms)
1.5
A
Ptot
Total dissipation at Tc = 25°C
40
W
Tstg
Storage temperature
-55 to 150
°C
150
°C
IC
ICM
IB
TJ
2/8
Parameter
Collector current
Collector peak current (tP < 5ms)
Max. operating junction temperature
ST13003D-K
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Electrical characteristics
Parameter
ICEV
Collector cut-off current
(VBE =-1.5V)
V(BR)EBO
Emitter-Base breakdown
voltage (IC = 0)
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
Test conditions
VCE =700V
9
IC =10mA
400
IC = 0.5A
IC = 1A
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 1A
Resistive load
tr
Rise time
ts
Storage time
tf
Fall time
Inductive load
ts
Storage time
VF
Diode forward voltage
Tc = 125°C
IE =10mA
Collector-emitter
saturation voltage
DC current gain
Typ.
VCE =700V
VCE(sat) (1)
hFE
Min.
Unit
1
5
mA
mA
18
V
V
_ IB = 0.1A
_ _ IB = 0.25A
IC = 1.5A _ _ IB = 0.5A
IC = 0.5A
Max.
_ IB = 0.1A
_ _ IB = 0.25A
0.5
1
3
V
V
V
1
1.2
V
V
IC =0.5A
V CE =2V
8
20
IC =1A
V CE =2V
5
25
VCC = 125V
IC = 1A
IB1 = 0.2A
IB2 = -0.2A
Tp = 25µs
IC = 1A
IB1 = 0.2A
VBE =-5V
L =50mH
1
µs
4
µs
0.7
µs
µs
0.8
VClamp =300V
IC = 0.5A
1.5
V
Note (1) Pulsed duration = 300µs, duty cycle ≤1.5%
3/8
Electrical characteristics
2.1
Test circuits
Figure 2.
Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
Figure 3.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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ST13003D-K
ST13003D-K
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
5/8
Package mechanical data
ST13003D-K
SOT-32 (TO-126) mechanical data
DIM.
mm.
MIN.
TYP
MAX.
A
2.40
2.90
B
0.64
0.88
B1
0.39
0.63
D
10.5
11.05
E
7.40
e
2.04
2.29
2.54
e1
4.07
4.58
5.08
L
15.3
P
2.90
Q
Q1
7.80
16
3.20
3.80
1
1.52
H2
2.15
I
1.27
0016114E
6/8
ST13003D-K
4
Revision history
Revision history
Table 4.
Revision history
Date
Revision
15-Nov-2007
1
Changes
Initial release.
7/8
ST13003D-K
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