ST13003N High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications 3 ■ 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging ST13003N 13003N SOT-32 BAG May 2009 Doc ID 15759 Rev 1 1/9 www.st.com 9 Electrical ratings 1 ST13003N Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Collector-base voltage (IC = 0) 9 V Collector current 1 A Collector peak current (tP < 5 ms) 2 A 0.5 A IC ICM IB Base current IBM Base peak current (tP < 5 ms) 1 A PTOT Total dissipation at Tc = 25 °C 20 W TSTG Storage temperature TJ Table 3. Symbol RthJC 2/9 Parameter -55 to 150 °C Max. operating junction temperature 150 Thermal data Parameter Thermal resistance junction-case Doc ID 15759 Rev 1 Value Unit 6.25 °C/W ST13003N 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 700 V VCE = 700 V IEBO Emitter cut-off current (IC = 0) VEB = 9 V VCEO(sus) (1) Collector-emitter sustaining voltage (IB = 0) IC = 10 mA VCE(sat) (1) Collector-emitter saturation voltage IC = 0.5 A IC = 1 A IB = 125 mA IB = 330 mA 0.7 1.2 V V VBE(sat) (1) Base-emitter saturation voltage IC = 0.5 A IC = 1 A IB = 125 mA IB = 330 mA 1.2 1.3 V V hFE DC current gain IC = 0.5 A, IC = 1 A VCE = 2 V VCE = 10 V ts tf Inductive Load Storage time Fall time IC = 0.4 A _ Vclamp = 300 V IB(on) = -IB(off) = 80 mA VBB(off) = - 5 V Figure 8 TC = 125 °C 1 5 mA mA 1 mA 400 V 6 18 5 15 2.5 180 µs ns 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% 2.1 Electrical characteristics (curves) Figure 2. Derating curve Figure 3. Doc ID 15759 Rev 1 DC current gain (VCE = 3 V) 3/9 Electrical characteristics 4/9 ST13003N Figure 4. DC current gain (VCE = 5 V) Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage Figure 7. Switching time inductive load Doc ID 15759 Rev 1 ST13003N 2.2 Electrical characteristics Test circuit Figure 8. Inductive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 3. Fast recovery rectifier Doc ID 15759 Rev 1 5/9 Package mechanical data 3 ST13003N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 6/9 Doc ID 15759 Rev 1 ST13003N Package mechanical data Doc ID 15759 Rev 1 7/9 Revision history 4 ST13003N Revision history Table 5. 8/9 Document revision history Date Revision 26-May-2009 1 Changes First release. Doc ID 15759 Rev 1 ST13003N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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