STPSC806 600 V power Schottky silicon carbide diode Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. September 2009 TO-220AC STPSC806D Table 1. Doc ID 16286 Rev 1 Device summary IF(AV) 8A VRRM 600 V Tj (max) 175 °C QC (typ) 10 nC 1/7 www.st.com 7 Characteristics 1 STPSC806 Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 18 A 8 A 30 24 120 A Average forward current Tc = 115 °C, δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C IFRM Repetitive peak forward current TC = 115 °C, Tj = 150 °C, δ = 0.1, 30 A Tstg Storage temperature range -55 to +175 °C Operating junction temperature -40 to +175 °C IF(AV) Tj Table 3. Thermal resistance Symbol Rth(j-c) Table 4. Symbol Parameter Maximum value Unit 2.4 °C/W Junction to case Static electrical characteristics Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 8 A Min. Typ. Max. - 20 100 - 150 1000 - 1.4 1.7 - 1.6 2.1 Unit µA V 1. tp = 10 ms, δ < 2% 2. tp = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.2 x IF(AV) + 0.113 x IF2(RMS) Table 5. Symbol 2/7 Other parameters Parameter Test conditions Qc Total capacitive charge C Total capacitance Typ. Unit Vr = 400 V, IF = 8 A dIF/dt = -200 A/µs Tj = 150 °C 10 nC Vr = 0 V, Tc = 25 °C, F = 1 Mhz 450 Vr = 400 V, Tc = 25 °C, F = 1 Mhz 35 Doc ID 16286 Rev 1 pF STPSC806 Characteristics Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. IFM(A) 16 1.E+04 Reverse leakage current versus reverse voltage applied (maximum values) IR(µA) 14 Tj=175 °C 1.E+03 12 Tj=25 °C Tj=150 °C 10 Tj=150 °C 1.E+02 8 Tj=175 °C 1.E+01 6 4 1.E+00 Tj=25 °C 2 VR(V) VFM(V) 1.E-01 0 0.0 0.5 Figure 3. 1.0 1.5 2.0 2.5 0 3.0 Peak forward current versus case temperature Figure 4. IM(A) 100 150 200 250 300 350 400 450 500 550 600 Junction capacitance versus reverse voltage applied (typical values) C(pF) 70 350 T δ=0.1 60 50 δ=tp/T F=1 MHz VOSC=30 mVRMS Tj=25 °C 300 tp 50 250 40 200 δ=0.3 30 150 δ=0.5 100 20 δ=1 10 δ=0.7 50 VR(V) TC(°C) 0 0 0 25 50 75 100 125 150 175 1 Doc ID 16286 Rev 1 10 100 1000 3/7 Characteristics Figure 5. 1.0 STPSC806 Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) IFSM(A) Zth(j-c)/Rth(j-c) 1.E+03 0.9 0.8 0.7 1.E+02 0.6 Tc=25 °C 0.5 Tc =125 °C 0.4 1.E+01 0.3 0.2 0.1 Single pulse tp(s) tp(s) 0.0 1.E-05 Figure 7. 1.E+00 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 1.E-04 1.E-03 Total capacitive charges versus dIF/dt (typical values) 16 QC(nC) IF=8A VR=400 V Tj=150 °C 14 12 10 8 6 4 2 dIF/dt(A/µs) 0 0 4/7 50 100 150 200 250 300 350 Doc ID 16286 Rev 1 400 450 500 1.E-02 1.E-01 1.E+00 STPSC806 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: convection (C) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AC Dimensions Dimensions Ref. A H2 ØI C L5 Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L7 L6 L2 F1 D L9 L2 L4 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 F M E G M Diam. I Doc ID 16286 Rev 1 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STPSC806D STPSC806D TO-220AC 1.86 g 50 Tube Revision history Table 8. 6/7 STPSC806 Document revision history Date Revision 24-Sep-2009 1 Changes First issue Doc ID 16286 Rev 1 STPSC806 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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