STTH100W04C Turbo 2 ultrafast high voltage rectifier Datasheet production data Features ■ A2 Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching losses ■ ECOPACK®2 compliant component ■ Ribbon bonding for more robustness K A1 A2 K A1 Description The STTH100W04CW, uses ST Turbo 2, 400 V technology. It is especially suited to be used for DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Housed in ST's TO-247, this device offers high power integration for all welding machines and industrial applications. October 2012 This is information on a product in full production. TO-247 STTH100W04CW Table 1. Doc ID 023617 Rev 1 Device summary Symbol Value IF(AV) 2 x 50 A VRRM 400 V trr (typ) 35 ns Tj(max) 175 °C VF (typ) 0.98 V 1/8 www.st.com 8 Characteristics 1 STTH100W04C Characteristics Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 75 A IF(AV) Average forward current, = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Table 3. Tc = 120 °C Per diode 50 Tc = 110°C Per device 100 tp = 10 ms sinusoidal A 350 A -65 to + 175 °C + 175 °C Maximum operating junction temperature Thermal resistance Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value Per diode 0.7 Total 0.4 Unit °C / W 0.1 °C / W When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions IR (1) Reverse leakage current Tj = 25 °C Tj = 125 °C Tj = 25 °C VF (2) Tj = 150 °C Forward voltage drop Tj = 25 °C Tj = 150 °C Typ Max. Unit 25 VR = VRRM µA 25 250 1.45 IF = 50A 0.98 1.20 V 1.75 IF = 100 A 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 µs, < 2% To evaluate the conduction losses use the following equation: P = 0.85 x IF(AV) + 0.007 IF2(RMS) 2/8 Min. Doc ID 023617 Rev 1 1.25 1.55 STTH100W04C Table 5. Characteristics Dynamic electrical characteristics (per diode) Symbol IRM QRR Sfactor Parameter Min. Reverse recovery current Reverse recovery charge IF = 50 A, VR = 320 V dIF/dt = -200 A/µs Tj = 125 °C Max. Unit 15 20 A nC 0.3 Reverse recovery time Tj = 25 °C tfr Forward recovery time Tj = 25 °C Forward recovery voltage Tj = 25 °C Figure 1. Typ 850 Softness factor trr VFP 90 Test conditions IF = 1 A, VR = 30 V dIF/dt = -100 A/µs 35 IF = 50 A, VFR = 1.4 V dIF/dt = 200 A/µs Average forward power dissipation Figure 2. versus average forward current (per diode) 2 50 ns 500 ns 3 V Forward voltage drop versus forward current (per diode) IFM(A) PF(AV)(W) 1000.0 δ = 0.5 80 δ=1 Tj=150°C (Maximum values) δ = 0.2 70 δ = 0.05 60 100.0 δ = 0.1 Tj=150 °C (Typical values) Tj=25 °C (Maximum values) 50 10.0 40 30 20 1.0 T IF(AV)(A) 10 δ = tp/T 0 0 10 Figure 3. 20 VFM (V) tp 30 0.1 40 50 60 70 0.0 0.4 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.8 1.2 1.6 2.0 2.4 Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) 1.0 35 IF=I F(AV) VR=320 V Tj=125 °C 0.9 30 0.8 25 0.7 0.6 20 0.5 15 0.4 0.3 0.2 10 Single pulse 5 0.1 0.0 1.E-04 tp(s) dIF/dt(A/µs) 0 1.E-03 1.E-02 1.E-01 1.E+00 0 50 Doc ID 023617 Rev 1 100 150 200 250 300 350 400 450 500 3/8 Characteristics Figure 5. STTH100W04C Reverse recovery time versus dIF/dt Figure 6. (typical values, per diode) trr(ns) Reverse recovery charges versus dIF/dt (typical values, per diode) QRR(nC) 180 1600 IF=I F(AV) VR=320 V Tj=125 °C 160 IF=I F(AV) VR=320 V Tj=125 °C 1400 140 1200 120 1000 100 800 80 600 60 400 40 200 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 Figure 7. 100 150 200 250 300 350 400 450 0 500 Reverse recovery softness factor versus dIF/dt (typical values, per diode) S factor Figure 8. 100 150 200 250 300 350 400 450 500 Relative variation of dynamic parameters versus junction temperature 2.0 0.6 IF=I F(AV) VR=320 V Tj=125 °C 0.5 50 IF=I F(AV) VR=320 V Reference: T j=125 °C SFACTOR 1.5 0.4 1.0 0.3 IRM 0.2 0.5 0.1 QRR dIF/dt(A/µs) 0.0 0 50 Figure 9. 100 150 200 250 300 350 400 450 Tj(°C) 0.0 25 500 Transient peak forward voltage versus dIF/dt (typical values, per diode) VFP(V) 75 100 tfr(ns) IF=I F(AV) VFR=1.4 V Tj=125 °C IF=I F(AV) Tj=125 °C 4 400 3 300 2 200 1 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 100 4/8 150 200 250 300 350 400 450 125 Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) 500 5 50 500 0 100 Doc ID 023617 Rev 1 150 200 250 300 350 400 450 500 STTH100W04C Characteristics Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1 MHz VOSC=30 mVRMS Tj=25 °C 100 VR(V) 10 1 10 Doc ID 023617 Rev 1 100 1000 5/8 Package information 2 STTH100W04C Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.55 N·m (1.0 N·m maximum) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-247 dimensions Dimensions Ref. Millimeters Min. Heat-sink plane A E ÆP S ÆR Typ. Inches Max. Min. Typ Max. A 4.85 5.15 0.191 0.203 A1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 D(1) 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.30 L 14.20 14.80 0.559 0.582 L1 3.70 4.30 0.169 D L2 L1 b1 L b2 1 2 3 b c A1 e 3 2 1 BACK VIEW L2 P (2) 5.60 18.50 typ. 0.209 0.215 0.220 0.145 0.728 typ. 3.55 3.65 0.139 0.143 R 4.50 5.50 0.177 0.217 S 5.30 5.70 0.209 0.216 0.224 1. Dimension D plus gate protrusion does not exceed 20.5 mm 2. Resin thickness around the mounting hole is not less than 0.9 mm 6/8 5.45 Doc ID 023617 Rev 1 5.50 STTH100W04C 3 Ordering information Ordering information Table 7. 4 Ordering information Ordering type Marking Package Weight Base qty Delivery mode STTH100W04CW STTH100W04CW TO-247 4.46 g 50 Tube Revision history Table 8. Document revision history Date Revision 05-Oct-2012 1 Changes First issue. Doc ID 023617 Rev 1 7/8 STTH100W04C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 023617 Rev 1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: STMicroelectronics: STTH100W04CW