STMICROELECTRONICS STTH100W04C

STTH100W04C
Turbo 2 ultrafast high voltage rectifier
Datasheet  production data
Features
■
A2
Ultrafast switching
■
Low reverse recovery current
■
Low thermal resistance
■
Reduces switching losses
■
ECOPACK®2 compliant component
■
Ribbon bonding for more robustness
K
A1
A2
K
A1
Description
The STTH100W04CW, uses ST Turbo 2, 400 V
technology. It is especially suited to be used for
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST's TO-247, this device offers high power
integration for all welding machines and industrial
applications.
October 2012
This is information on a product in full production.
TO-247
STTH100W04CW
Table 1.
Doc ID 023617 Rev 1
Device summary
Symbol
Value
IF(AV)
2 x 50 A
VRRM
400 V
trr (typ)
35 ns
Tj(max)
175 °C
VF (typ)
0.98 V
1/8
www.st.com
8
Characteristics
1
STTH100W04C
Characteristics
Table 2.
Absolute ratings (limiting values, at 25 °C, unless otherwise specified,
per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
400
V
IF(RMS)
Forward rms current
75
A
IF(AV)
Average forward current,  = 0.5
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Table 3.
Tc = 120 °C
Per diode
50
Tc = 110°C
Per device
100
tp = 10 ms sinusoidal
A
350
A
-65 to + 175
°C
+ 175
°C
Maximum operating junction temperature
Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value
Per diode
0.7
Total
0.4
Unit
°C / W
0.1
°C / W
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
IR (1)
Reverse leakage current
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
VF (2)
Tj = 150 °C
Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Typ
Max.
Unit
25
VR = VRRM
µA
25
250
1.45
IF = 50A
0.98
1.20
V
1.75
IF = 100 A
1. Pulse test: tp = 5 ms,  < 2%
2. Pulse test: tp = 380 µs,  < 2%
To evaluate the conduction losses use the following equation:
P = 0.85 x IF(AV) + 0.007 IF2(RMS)
2/8
Min.
Doc ID 023617 Rev 1
1.25
1.55
STTH100W04C
Table 5.
Characteristics
Dynamic electrical characteristics (per diode)
Symbol
IRM
QRR
Sfactor
Parameter
Min.
Reverse recovery current
Reverse recovery charge
IF = 50 A, VR = 320 V
dIF/dt = -200 A/µs
Tj = 125 °C
Max.
Unit
15
20
A
nC
0.3
Reverse recovery time
Tj = 25 °C
tfr
Forward recovery time
Tj = 25 °C
Forward recovery voltage
Tj = 25 °C
Figure 1.
Typ
850
Softness factor
trr
VFP
90
Test conditions
IF = 1 A, VR = 30 V
dIF/dt = -100 A/µs
35
IF = 50 A, VFR = 1.4 V
dIF/dt = 200 A/µs
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
2
50
ns
500
ns
3
V
Forward voltage drop versus
forward current (per diode)
IFM(A)
PF(AV)(W)
1000.0
δ = 0.5
80
δ=1
Tj=150°C
(Maximum values)
δ = 0.2
70
δ = 0.05
60
100.0
δ = 0.1
Tj=150 °C
(Typical values)
Tj=25 °C
(Maximum values)
50
10.0
40
30
20
1.0
T
IF(AV)(A)
10
δ = tp/T
0
0
10
Figure 3.
20
VFM (V)
tp
30
0.1
40
50
60
70
0.0
0.4
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
0.8
1.2
1.6
2.0
2.4
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
IRM(A)
1.0
35
IF=I F(AV)
VR=320 V
Tj=125 °C
0.9
30
0.8
25
0.7
0.6
20
0.5
15
0.4
0.3
0.2
10
Single pulse
5
0.1
0.0
1.E-04
tp(s)
dIF/dt(A/µs)
0
1.E-03
1.E-02
1.E-01
1.E+00
0
50
Doc ID 023617 Rev 1
100
150
200
250
300
350
400
450
500
3/8
Characteristics
Figure 5.
STTH100W04C
Reverse recovery time versus dIF/dt Figure 6.
(typical values, per diode)
trr(ns)
Reverse recovery charges versus
dIF/dt (typical values, per diode)
QRR(nC)
180
1600
IF=I F(AV)
VR=320 V
Tj=125 °C
160
IF=I F(AV)
VR=320 V
Tj=125 °C
1400
140
1200
120
1000
100
800
80
600
60
400
40
200
20
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
Figure 7.
100
150
200
250
300
350
400
450
0
500
Reverse recovery softness factor
versus dIF/dt (typical values, per
diode)
S factor
Figure 8.
100
150
200
250
300
350
400
450
500
Relative variation of dynamic
parameters versus junction
temperature
2.0
0.6
IF=I F(AV)
VR=320 V
Tj=125 °C
0.5
50
IF=I F(AV)
VR=320 V
Reference: T j=125 °C
SFACTOR
1.5
0.4
1.0
0.3
IRM
0.2
0.5
0.1
QRR
dIF/dt(A/µs)
0.0
0
50
Figure 9.
100
150
200
250
300
350
400
450
Tj(°C)
0.0
25
500
Transient peak forward voltage
versus dIF/dt (typical values, per
diode)
VFP(V)
75
100
tfr(ns)
IF=I F(AV)
VFR=1.4 V
Tj=125 °C
IF=I F(AV)
Tj=125 °C
4
400
3
300
2
200
1
100
dIF/dt(A/µs)
dIF/dt(A/µs)
0
100
4/8
150
200
250
300
350
400
450
125
Figure 10. Forward recovery time versus dIF/dt
(typical values, per diode)
500
5
50
500
0
100
Doc ID 023617 Rev 1
150
200
250
300
350
400
450
500
STTH100W04C
Characteristics
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per
diode)
C(pF)
1000
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
100
VR(V)
10
1
10
Doc ID 023617 Rev 1
100
1000
5/8
Package information
2
STTH100W04C
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.55 N·m (1.0 N·m maximum)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-247 dimensions
Dimensions
Ref.
Millimeters
Min.
Heat-sink plane
A
E
ÆP
S
ÆR
Typ.
Inches
Max.
Min.
Typ
Max.
A
4.85
5.15
0.191
0.203
A1
2.20
2.60
0.086
0.102
b
1.00
1.40
0.039
0.055
b1
2.00
2.40
0.078
0.094
b2
3.00
3.40
0.118
0.133
c
0.40
0.80
0.015
0.031
D(1)
19.85
20.15 0.781
0.793
E
15.45
15.75 0.608
0.620
e
5.30
L
14.20
14.80 0.559
0.582
L1
3.70
4.30
0.169
D
L2
L1
b1
L
b2
1
2
3
b
c
A1
e
3
2
1
BACK VIEW
L2
P
(2)
5.60
18.50 typ.
0.209 0.215 0.220
0.145
0.728 typ.
3.55
3.65
0.139
0.143
R
4.50
5.50
0.177
0.217
S
5.30
5.70
0.209 0.216 0.224
1. Dimension D plus gate protrusion does not exceed 20.5 mm
2. Resin thickness around the mounting hole is not less than 0.9 mm
6/8
5.45
Doc ID 023617 Rev 1
5.50
STTH100W04C
3
Ordering information
Ordering information
Table 7.
4
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTH100W04CW
STTH100W04CW
TO-247
4.46 g
50
Tube
Revision history
Table 8.
Document revision history
Date
Revision
05-Oct-2012
1
Changes
First issue.
Doc ID 023617 Rev 1
7/8
STTH100W04C
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2012 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
8/8
Doc ID 023617 Rev 1
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
STMicroelectronics:
STTH100W04CW