RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode SOT23 A Features F B E Low VF, Low IR, High Reliability Schottky Diode Surface device type mounting Moisture sensitivity level 1 G C D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on Unit (mm) Unit (inch) Min Max Min 2.65 3.05 Dimensions packing code and prefix "G" on date code A Max 0.104 0.120 Mechanical Data B 1.19 1.40 0.047 0.055 Case :SOT-23 small outline plastic package C 0.37 0.51 0.015 0.020 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed D 1.78 2.05 0.070 0.080 E 2.10 2.50 0.083 0.098 High temperature soldering guaranteed: 260°C/10s F 0.89 0.11 0.035 0.043 Weight :0.008 gram (approximately) G 0.45 0.61 0.018 0.024 Ordering Information 2 Cathode 1 Anode Part No. Package Packing RB495D RF SOT23 3Kpcs/7" Reel 3 Anode/Cathode Electrical Symbol Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Symbol Value Units PD 200 mW VRRM 40 V Reverse Voltage VR 25 V Mean Forward Current IO 350 mA Non-Repetitive Peak Forward Surge Current (Note 1) Junction and Storage Temperature Range IFSM 1.5 A TJ, TSTG -40 to + 125 °C Electrical Characteristics Type Number Reverse Breakdown Voltage IR= 100μA Forward Voltage IF= 10mA IF= 200mA Reverse Leakage Current VR= 25V Junction Capacitance VR=0, f=1.0MHz Symbol Min Max Units V(BR) 40 - V - 0.3 - 0.5 IR - 70 μA CJ - 50 pF VF V Notes:1. 8.3ms singlehalf Sine-wave Version : A09 RB495D 40V,350mA,SMD Schottky Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse Voltage Instantaneous Forward Current (mA) FIG 1 Typical Forward Characteristics 10000 Reverse Current (uA) 1000 100 1000 10 Ta=25°C 1 0.1 Ta=25°C 100 10 1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 10 Instantaneous Forward Volatge (V) 30 40 50 60 Reverse Volatge (V) FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 100 Junction Capacitance (pF) 250 Power Dissipation (mW) 20 200 150 100 50 0 80 60 40 20 0 0 25 50 75 100 Ambient Temperature (°C) 125 150 0 5 10 15 20 25 30 Reverse Voltage (V) Version : A09