TS4148 RYG 400mW High Speed SMD Switching Diode Small Signal Diode 0805 A Features B Designed for mounting on small surface. Extremely thin/leadless package C High mounting capability,strong surage with stand, high reliability. D Pb free version and RoHS compliant Halogen free E Mechanical Data Unit (mm) Unit (inch) Min Max Min 1.80 2.20 Dimensions Case :0805 standard package, molded plastic Max Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed A B 1.05 1.45 0.041 0.057 High temperature soldering guaranteed: 260°C/10s C 0.25 0.65 0.010 0.026 Polarity : Indicated by cathode band D 0.75 0.95 0.030 0.037 Weight : 0.006 gram (approximately) E 1.30 0.90 0.051 0.034 0.071 0.086 Ordering Information Part No. Package Packing 0805 5Kpcs / 7" Reel TS4148 RYG Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units PD 400 mW Non-Repetitive Peak Reverse Voltage VRSM 100 V Repetitive Peak Reverse Voltage VRRM 75 V Repetitive Peak Forward Current IFRM 300 mA IO 150 mA IFSM 0.5 A Type Number Power Dissipation Mean Forward Current Non-Repetitive Peak Forward Surge Current Tp=1sec square waveform 2.0 8.3ms single half sine waveform Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range RșJA 375 °C/W TJ, TSTG -65 to + 175 °C Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current (Note 2) IF= 10mA V R= 20V V R= 75V Max Units - 75 V - 1.00 V - 25 nA Symbol Min V(BR) VF IR 5 ȝA Junction Capacitance VR=0, f=1.0MHz CJ 4.0 pF Reverse Recovery Time (Note3) Trr 4 ns - Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100ȝA Notes:3. Test Condition : I F=10mA, IR=1mA,RL=100ȍ Version : G11 TS4148 RYG 400mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse Voltage FIG 1 Typical Forward Characteristics 100 100 Reverse Current (uA) Instantaneous Forward Current (A) 1000 Ta=25°C 10 Ta=100° 1 10 Ta=25°C 1 0.1 0.1 0.01 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 FIG 3 Admissible Power Dissipation Curve 80 100 120 FIG 4 Typical Junction Capacitance 500 1.2 Junction Capacitance (pF) Power Dissipation (mW) 60 Reverse Voltage (V) Instantaneous Forward Voltage (V) 400 300 200 100 0 1.1 1 0.9 0.8 0.7 0.6 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 Reverse Voltage (V) Ambient Temperature (°C) FIG 5 Forward Resistance vs. Forward Current Dynamic Forward Resistance (Ƿ) 10000 1000 100 10 1 0 0 1 10 100 Forward Current (mA) Version : G11