1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features C Fast switching device(Trr<4.0nS) Through-hole device type mounting A Moisture sensitivity level 1 Solder hot dip Tin(Sn) lead finish B Pb free version and RoHS compliant All External Surfaces are Corrosion Resistant and Leads are Readily Solderable Dimensions Mechanical Data Case : DO-35 package (SOD-27) Unit (mm) Unit (inch) Min Max A 0.45 0.55 0.018 0.022 Min Max High temperature soldering guaranteed : 260°C/10s B 3.05 5.08 0.120 0.200 Polarity : Indicated by cathode band C 25.4 38.1 1.000 1.500 Weight : 109 ± 4 mg D 1.53 2.28 0.060 0.090 Ordering Information Part No. Package Packing 1Nxxxx A0 DO-35 5Kpcs / Ammo 1Nxxxx R0 DO-35 10Kpcs / 14" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current Pulse Width 8.3ms Non-Repetitive Peak Forward Current Mean Forward Current Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol Value Units PD 500 mW VRRM 100 V IFSM A 2.0 IFM 450 mA IO 150 mA RθJA 240 °C/W TJ, TSTG -65 to + 150 °C Electrical Characteristics Type Number Reverse Breakdown Voltage Symbol IR=100uA IR=5uA V(BR) Min Max 100 Units V 75 Forward Voltage 1N4448, 1N914B IF=5.0mA 1N4148 IF=10.0mA 1N4448, 1N914B IF=100.0mA Reverse Leakage Current Junction Capacitance Reverse Recovery Time (Note 2) VR=20V VR=75V VR=0, f=1.0MHz VF 0.62 0.72 1.0 V 1.0 25 nA 5.0 μA CJ 4.0 pF Trr 4.0 ns IR Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100Ω, IRR=1mA Version : C09 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics FIG 2 Reverse Current vs Reverse Voltage 100 Reverse Current (uA) Forward Current (A) 1 0.1 Ta=25°C 0.01 10 Ta=25°C 1 0.1 0.001 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 Forward Voltage (V) 60 80 100 120 Reverse Voltage (V) FIG 4 Typical Junction Capacitance FIG 3 Admissible Power Dissipation Curve 1.5 Junction Capacitance (pF) 500 Power Dissipation (mW) 40 400 300 200 100 0 1.2 0.9 0.6 0.3 0 0 25 50 75 100 125 150 175 200 0 5 10 15 20 25 30 Reverse Voltage (V) Ambient Temperature (°C) FIG 5 Forward Resistance vs. Forward Current Dynamic Forward Resistance (Ώ) 10000 1000 100 10 1 0 0 1 Forward Current (mA) 10 100 Version : C09