UNISONIC TECHNOLOGIES CO., LTD 15N06 Power MOSFET N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<100mΩ @VGS=5V, ID=7.5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15N06L-TA3-T 15N06G-TA3-T 15N06L-TF3-T 15N06G-TF3-T 15N06L-TN3-R 15N06G-TN3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 6 QW-R502-260.C 15N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RG=20kΩ) VDGR 60 V Gate-Source Voltage VGSS ±15 V Continuous Drain Current (TC=25°C) ID 15 A Pulsed Drain Current (Note 2) IDM 60 A Avalanche Current (Note 3) IAR 15 A Single Pulsed (Note 4) EAS 50 mJ Avalanche Energy 12 mJ Repetitive (Note 3) EAR TO-220 2.2 W Power Dissipation (Ta=25°C) PD TO-220F 2.0 W TO-252 1.5 W Junction Temperature TJ +175 °C Storage Temperature TSTG -65 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area. 3. Pulse width limited by TJ(MAX),δ<1% 4. Starting TJ=25°C, ID=IAR, VDD=25V THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-220F TO-252 TO-220 TO-220F TO-252 MIN TYP MAX 58 62 100 4.38 5 3 θJA θJC UNIT °C/W °C/W °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance Forward Transconductance (Note 1) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=Max Rating VDS=0V, VGS=±15V 60 VGS(TH) VDS=VGS, ID=250 µA VDS>ID(ON)×RDS(ON)MAX, VGS=10V VGS=5V, ID=7.5A VDS>ID(ON)×RDS(ON)MAX, ID=7.5A 1 ID(ON) RDS(ON) gFS CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF VDS=25V, VGS=0V, f=1MHz VDD=40V, VGS=5V, ID=15A VGS=5V, VDD=30V, RG=4.7Ω, ID=7.5A VGS=10V, VDD=48V, RG=47Ω ID=15A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 1.7 MAX UNIT 250 ±100 V µA nA 2.5 V 15 3 A 75 5 100 mΩ S 700 230 80 950 310 110 pF pF pF 18 8 9 15 160 52 100 30 nC nC nC ns ns ns ns 60 200 80 140 2 of 6 QW-R502-260.C 15N06 Power MOSFET ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD ISD=15 A,VGS=0V(Note 1) Source-Drain Current ISD Source-Drain Current (Pulse) ISDM (Note 2) Note: 1. Pulse width=300μs, duty cycle=1.5% Note: 2. Pulse width limited by safe operating area UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1.5 15 60 V A A 3 of 6 QW-R502-260.C 15N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-260.C 15N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS RL VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) Pulse Width≤ 1μs tD(OFF) tF tR Duty Factor≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms QG 10V QGS QGD VGS Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-260.C 15N06 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-260.C