UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 900V N-CHANNEL MOSFET DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. TO-247 FEATURES * RDS(ON) = 1.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 1 TO-3P SYMBOL 2.Drain 1 1.Gate TO-220F1 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-TF1-T 9N90G-TF1-T Package TO-247 TO-3P TO-220F1 www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., LTD Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 6 QW-R502-217.E 9N90 Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25°C) Pulsed Drain Current (Note 2) Avalanche Current (Note 2) Single Pulsed(Note 3) Avalanche Energy Repetitive(Note 2) Peak Diode Recovery dv/dt (Note 4) TO-247 Power Dissipation TO-3P SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt TO-220F1 Linear Derating Factor above TC = 25°C RATINGS 900 ±30 9.0 36 9.0 900 28 4.0 160 240 W 36 PD TO-247 TO-3P TO-220F1 UNIT V V A A A mJ mJ V/ns W 1.28 2.22 W/°C RATINGS 50 40 62.5 0.78 0.52 3.47 UNIT °C/W W/°C 0.288 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction-to-Case SYMBOL TO-247 TO-3P TO-220F1 TO-247 TO-3P TO-220F1 θJA θJC °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current BVDSS VGS = 0 V, ID = 250μA 900 V IDSS VDS = 900 V, VGS = 0 V 10 μA Forward IGSSF VGS = 30 V, VDS = 0 V 100 nA Reverse IGSSR VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C 0.99 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) VGS = 10 V, ID = 4.5 A 3.0 1.12 5.0 V 1.4 Ω DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25 V, VGS = 0 V, f = 1.0 MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2100 2730 pF 175 230 pF 14 18 pF 2 of 6 QW-R502-217.E 9N90 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time VDD = 450V, ID =11.0 A, RG = 25Ω (Note 1, 2) tF Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD VDS = 720V, ID = 11.0A, VGS = 10 V (Note 1,2) 50 110 ns 120 250 ns 100 210 ns 75 160 ns 45 58 nC 13 nC 18 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 9.0 A, dIF / dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 550 6.5 1.4 V 9.0 A 36 A ns μC 3 of 6 QW-R502-217.E 9N90 Power MOSFET TEST CIRCUIT Fig. 2A Switching Test Circuit Fig. 3A Gate Charge Test Circuit Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform Fig. 4B Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-217.E 9N90 Power MOSFET TEST CIRCUIT(Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-217.E 9N90 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-217.E