UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 400 V N-CHANNEL MOSFET DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 0.48Ω @VGS = 10 V * Ultra low gate charge ( typical 27 nC ) * Low reverse transfer capacitance ( CRSS = typical 20 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 11N40L Lead-free: Halogen-free: 11N40G 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 11N40-TF3-T Ordering Number Lead Free Plating 11N40L-TF3-T Halogen Free 11N40G-TF3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-219.Aa 11N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25℃) Pulsed Drain Current (Note 1) Avalanche Current (Note 1) Single Pulsed(Note 2) Avalanche Energy Repetitive(Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation Derate above 25℃ RATINGS UNIT 400 V ±30 V 11.4 A 46 A 11.4 A 520 mJ 14.7 4.5 V/ns 147 W PD 1.18 W/℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to- Ambient Junction-to-Case SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt MIN TYP MAX 62.5 0.85 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge Gate Source Charge Gate Drain Charge IGSS ΔBVDSS/ΔTJ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD TEST CONDITIONS VGS =0 V, ID =250 µA VDS =400V, VGS =0 V VDS =320V, TC =125°C VDS =0 V, VGS = ±30 V VDS =VGS, ID =250 µA VGS = 10 V, ID = 5.7 A VDS =25V, VGS =0V, f=1MHz VDD=200V, ID=11.4A, RGEN =25Ω(Note 4,5) VDS =320V, VGS =10V, ID =11.4A (Note 4,5) TYP MAX UNIT 400 V 1 10 ±100 ID =250 µA, Referenced to25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN nA mV/℃ 0.42 2.0 µA 0.38 4.0 0.48 V Ω 1100 180 20 1400 240 30 pF 30 100 60 60 27 7.3 12.3 70 210 130 130 35 ns nC 2 of 6 QW-R502-219.Aa 11N40 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=11.4 A,VGS=0V Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, dIF /dt = 100 A/ s, IS = 11.4 A (Note 4) Reverse Recovery Charge QRR Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Satarting TJ=25°C. 3. ISD ≤ 11.4A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C. 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.5 V 11.4 A 46 240 1.8 ns µC 3 of 6 QW-R502-219.Aa 11N40 Preliminary Power MOSFET TEST CIRCUIT Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-219.Aa 11N40 Preliminary Power MOSFET TEST CIRCUIT(Cont.) + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Forward Voltage Drop 5 of 6 QW-R502-219.Aa 11N40 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-219.Aa