UNISONIC TECHNOLOGIES CO.,LTD. PN2907A PNP EPITAXIAL SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC PN2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 TO-92 * Pb-free plating product number: PN2907AL PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Base 3 Collector ORDERING INFORMATION Order Number Normal Lead free PN2907A-T92-B PN2907AL-T92-B PN2907A-T92-K PN2907AL-T92-K Package Packing TO-92 TO-92 Tape Box Bulk www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD. 1 QW-R201-041.B PN2907A PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Note 1) (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO 60 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 800 mA 625 mW Power Dissipation PD 5.0 mW/°C Derate above 25°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Note 2: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Note 3: All voltage (V) and currents (V) are negative polarity for PNP transistors. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO TEST CONDITIONS MIN IC=10mA, IB=0 IC=10µA, IE=0 IE=10µA , IC=0 VCB=30V, VEB=0.5V VCE=30V, VBE=0.5V VCB=50V, IE=0 VCB=50V, IE=0, Ta=150°C 60 60 5 Ic=0.1mA, VCE=10V Ic=1.0 mA, VCE=10V Ic=10 mA, VCE=10V Ic=150 mA, VCE=10V* Ic=500 mA, VCE=10V* Ic=150mA, IB=15mA Ic=500mA, IB=50mA Ic=150mA, IB=15mA* Ic=500mA, IB=50mA 75 100 100 100 50 TYP MAX UNIT 50 50 0.02 20 V V V nA nA µA µA ON CHARACTERISTICS DC Current Gain hFE Collector-Emitter Saturation Voltage* VCE(sat) Base-Emitter Saturation Voltage VBE(sat) SMALL SIGNAL CHARACTERISTICS Current Gain – Bandwidth Product fT Ic=50mA, VCE=20V, f=100MHz Output Capacitance Cobo VCB=10V, IE=0, f=100kHz Input Capacitance Cibo VEB=2V, IC=0, f=100kHz SWITCHING CHARACTERISTICS Turn-on Time tON Vcc=30V, Ic=150mA Delay Time tDLY IB1=15mA Rise Time tR Turn-off Time tOFF Vcc=6V, Ic=150mA Storage Time tS IB1=IB2=15mA Fall Time tF * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0% Note: All voltages (V) and currents (A) are negative polarity for PNP transistors UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 300 0.4 1.6 1.3 2.6 V V V V 8 30 MHz pF pF 45 10 40 100 80 30 ns ns ns ns ns ns 200 2 QW-R201-041.B PN2907A PNP EPITAXIAL SILICON TRANSISTOR THERMAL DATA PARAMETER Thermal Resistance Junction- Ambient Thermal Resistance Junction- Case SYMBOL RATINGS 200 83.3 ΘJA ΘJc UNIT °C/W TEST CIRCUIT -30V 200Ω 1.0kΩ 0 -16V 50Ω ≤200ns Fig. 1 Saturated Turn-On Switching Time Test Circuit 1.5V 1kΩ NOTE: BVEBO=5.0V -6.0V 37Ω 1.0kΩ 0 -30V 50Ω ≤200ns Fig. 2 Saturated Turn-Off Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R201-041.B PN2907A PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs Collector Current 500 VCE =5V 400 125℃ 300 200 25℃ 100 -40℃ 0 0.1 0.3 1 3 10 30 100 300 COLLECTOR EMITTER VOLTAGE, VCESAT (V) TYPICAL PULSED CURRENT GAIN, hFE Typical Pulsed Current Gain vs Collector Current 1 β=10 0.8 0.6 25℃ 0.4 125℃ 0.2 0 10 1 COLLECTOR CURRENT, IC (mA) 25℃ 125℃ 0.2 β =10 1 10 100 500 BASE EMITTER ON VOLTAGE, VBEON (V) BASE EMITTER VOLTAGE, VBESAT (V) -40℃ 0.8 0 1 -40℃ 0.8 0.6 25℃ 0.4 125℃ 0.2 VCE=5V 0 0.1 1 0.1 50 75 100 125 AMBIENT TEMP ERATURE, Ta (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 20 10 25 10 Input and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature VCB=35V 0.01 1 COLLECTOR CURRENT, IC (mA) CAPACITANCE (pF) COLLECTOR CURRENT, ICBO (nA) COLLECTOR CURRENT, IC (mA) 100 500 Base Emitter ON Voltage vs Collector Current 1 0.4 100 COLLECTOR CURRENT, IC (mA) Base-Emitter Saturation Voltage vs Collector Current 0.6 -40℃ 16 12 Cib 8 Cob 4 0 -0.1 -1 -10 -50 REVERSE BIAS VOLTAGE (V) 4 QW-R201-041.B PN2907A PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS(cont.) Turn On and Turn Off Times vs Collector Current Switching Times vs Collector Current TIME (nS) 200 500 IC IB1 =IB2 = 10 ts 150 100 tR 50 0 IC IB1=I B2= 10 400 VCC=15V TIME (nS) 250 tF VCC=15V 300 200 tOFF 100 tDLY tON 0 10 100 1000 10 COLLECTOR CURRENT, I C (mA) COLLECTOR CURRENT, I C (mA) tR =15V 20 10 5 30ns 2 1 60ns 10 Power Dissipation vs Ambient Temperature POWER DISSIPATION, PD (W) TURN ON BASE CURRENT , IBf (mA) Rise Time vs Collector and Turn On Base Currents 50 100 500 COLLECTOR CURRENT, I C (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1000 100 1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 TEMPERATURE, (℃) 5 QW-R201-041.B PN2907A PNP EPITAXIAL SILICON TRANSISTOR Common Emitter Characteristics 5 hoe hre 2 hfe 1 hie 0.5 0.2 VCE= -10V Ta=25℃ 0.1 -2 -1 -5 -10 -20 -50 COLLECTOR CURRENT, IC (mA) RELATIVE TO VALUES AT VCE=10V, CHAR RELATIVE TO VALUES AT IC=10mA, CHAR TYPICAL CHARACTERISTICS FOR COMMON EMITTER (f=1kHz) Common Emitter Characteristics 1.3 1.2 hre hie hfe hoe hre and hoe 1.1 1 hie 0.9 IC= -10mA Ta=25℃ hfe 0.8 -4 -8 -12 -16 -20 COLLECTOR VOLTAGE, VCE (V) RELATIVE TO VALUES AT T A=25℃, CHAR Common Emitter Characteristics 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 hfe hie hre hoe I C=-10mA VCE=-10V hoe hre hie hfe -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE, Ta (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 QW-R201-041.B