APM4420K N-Channel Enhancement Mode MOSFET Pin Description Features • • • • • 30V/12A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged SOP-8 Package D D D D S S S G Top View of SOP − 8 Lead Free Available (RoHS Compliant) ( 5,6,7,8 ) DD DD Applications • (4) G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S S S (1, 2, 3) N-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Dev ice Blank : Original Dev ice APM 4420 Lead Free Code Handling Code Tem p. Range Package Code APM 4420 K : APM 4420 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1 www.anpec.com.tw APM4420K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID* Continuous Drain Current IDM* IS* 300µs Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V 12 VGS=10V A 45 A 2.3 150 °C -55 to 150 TA=25°C TA=100°C Thermal Resistance-Junction to Ambient 2 0.8 W 62.5 °C/W Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Typ. Max. 30 1 30 1 Unit V TJ=85°C VDS=VGS, IDS=250µA Diode Forward Voltage Min. VDS=24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM4420K 1.5 µA 2 V ±100 nA VGS=10V, IDS=12A 6 9 VGS=4.5V, IDS=7A 10 13 ISD=2.3A, VGS=0V 0.8 1.3 90 115 mΩ V b Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 VDS=15V, VGS=10V, IDS=12A 14.8 nC 11.2 2 www.anpec.com.tw APM4420K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4420K Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Ω 2.2 3130 pF 620 275 9 16 7 14 67 94 30 45 ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 3 www.anpec.com.tw APM4420K Typical Characteristics Drain Current 2.5 15 2.0 12 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 9 6 3 0.5 o o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im on )L s( 1ms Rd ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0 Tj - Junction Temperature (°C) 100 10 TA=25 C,VG=10V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4420K Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 45 16 VGS=5,6,7,8,9,10V ID - Drain Current (A) 35 14 RDS(ON) - On - Resistance (mΩ) 40 4V 30 25 20 15 10 5 12 VGS=4.5V 10 8 VGS=10V 6 4 2 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 10 15 20 25 30 35 40 ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 40 1.4 Normalized Threshold Voltage 1.6 35 ID - Drain Current (A) 5 VDS - Drain-Source Voltage (V) 45 30 25 o Tj=125 C 20 15 o Tj=-55 C o Tj=25 C 10 45 IDS =250µA 1.2 1.0 0.8 0.6 0.4 0.2 5 0 0 0 1 2 3 4 5 0.0 -50 -25 6 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4420K Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 50 VGS = 10V IDS = 12A 1.4 o 10 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 0.6 0.4 Tj=150 C o Tj=25 C 1 0.2 o 0.0 -50 -25 RON@Tj=25 C: 6mΩ 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 Capacitance Gate Charge VDS=15V 9 I = 12A D VGS - Gate - source Voltage (V) 4000 3500 Ciss 3000 2500 2000 1500 1000 Coss 500 Crss 5 10 15 20 25 8 7 6 5 4 3 2 1 0 30 0 10 20 30 40 50 60 70 80 90 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1.4 10 4500 C - Capacitance (pF) 0.6 VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 5000 0 0.2 6 www.anpec.com.tw APM4420K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 1. 27B S C 0. 50B S C 8° 8° 7 www.anpec.com.tw APM4420K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 8 www.anpec.com.tw APM4420K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 D1 9 Ko www.anpec.com.tw APM4420K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application SOP-8 A 330±1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2± 0.2 F D D1 Po P1 Ao 5.5 ± 0.1 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 W 12 + 0.3 - 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Apr., 2005 10 www.anpec.com.tw