ANPEC APM9988COC-TU

APM9988CO
Dual N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V
RDS(ON)=19mΩ(typ.) @ VGS=2.5V
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of TSSOP − 8
(1)
D
Applications
•
(8)
D
Power Management, Portable Equipment and
Battery Powered Systems
(4)
G1
(5)
G2
S1
(2)
S1
(3)
S2 S2
(6) (7)
N-Channel MOSFET
Ordering and Marking Information
Package Code
O : TSSOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM9988C
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9988C O :
APM9988C
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
1
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APM9988CO
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±8
Continuous Drain Current
IDM*
I S*
300µs Pulsed Drain Current
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
6
ID*
TSTG
Unit
VGS=4.5V
A
20
A
1.4
150
°C
-55 to 150
TA=25°C
1.25
TA=100°C
0.5
Thermal Resistance-Junction to Ambient
W
°C/W
100
Note:
*Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Test Condition
APM9988CO
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
VGS=0V, IDS=250µA
1
TJ=85°C
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±8V, VDS=0V
Diode Forward Voltage
V
VDS=16V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
20
30
0.5
0.7
µA
1
V
±10
µA
VGS=4.5V, IDS=6A
16
20
VGS=2.5V, IDS=5.2A
19
25
ISD=0.5A, VGS=0V
0.7
1.3
16.5
21
mΩ
V
Gate Charge Characteristics b
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
VDS=10V, VGS=4.5V,
IDS=6A
4.5
nC
4.5
2
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APM9988CO
Electrical Characteristics (Cont.)
Symbol
Parameter
(T A = 25°C unless otherwise noted)
Test Condition
APM9988CO
Min.
Typ.
Max.
Unit
Dynamic Characteristics b
RG
Gate Resistance
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Turn-off Fall Time
trr
Reverse Recovery Time
Q rr
Reverse Recovery Charge
Notes:
VGS=0V,V DS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=10V, RL=10Ω,
IDS=1A, V GEN=4.5V,
R G=6Ω
ISD =6A, dISD/dt=100A/µs
Ω
2
1155
pF
200
90
7
14
10
19
47
86
24
45
ns
25
ns
9
nC
a : Pulse test ; pulse width≤300 µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
3
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APM9988CO
Typical Characteristics
Drain Current
Power Dissipation
1.5
8
ID - Drain Current (A)
Ptot - Power (W)
1.2
0.9
0.6
6
4
2
0.3
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
300µs
Rd
s(o
n)
Lim
it
10
Normalized Transient Thermal Resistance
100
ID - Drain Current (A)
TA=25 C,VG=4.5V
1ms
10ms
1
100ms
0.1
1s
DC
o
T =25 C
0.01 A
0.01
0.1
1
10
Rev. B.1 - Sep., 2005
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
2
Mounted on 1in pad
o
RθJA : 100 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM9988CO
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
20
24
VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V
22
RDS(ON) - On - Resistance (mΩ)
18
ID - Drain Current (A)
16
14
12
10
1.5V
8
6
4
VGS=2.5V
20
18
VGS=4.5V
16
14
12
2
0
0.0
10
0.5
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10 12 14 16 18 20
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.6
20
IDS =250µA
Normalized Threshold Voltage
18
ID - Drain Current (A)
16
14
12
10
o
Tj=125 C
8
o
Tj=-55 C
o
6
Tj=25 C
4
1.4
1.2
1.0
0.8
0.6
0.4
2
0
0.0
0.4
0.8
1.2
1.6
2.0
0.2
-50 -25
2.4
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM9988CO
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
20
1.6
VGS= 4.5V
10
1.4
IS - Source Current (A)
Normalized On Resistance
ID = 6A
1.2
1.0
0.8
o
Tj=150 C
o
Tj=25 C
1
o
RON@Tj=25 C: 16mΩ
0.6
-50 -25
0
25
50
0.1
0.2
75 100 125 150
0.6
0.8
1.0
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1.2
5
2000
Frequency=1MHz
VDS=10V
1750
VGS - Gate - source Voltage (V)
IDS= 6A
1500
C - Capacitance (pF)
0.4
1250
Ciss
1000
750
500
Coss
250
4
3
2
1
Crss
0
0
2
4
6
8
0
10 12 14 16 18 20
Rev. B.1 - Sep., 2005
2
4
6
8
10 12 14 16 18 20
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
0
6
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APM9988CO
Packaging Information
TSSOP-8
e
8 7
2x E/2
E1
( 2)
E
GAUGE
PLANE
S
1 2
e/2
0.25
D
L
A2
A
b
Dim
A
A1
A2
b
D
e
E
E1
L
L1
R
R1
S
φ1
φ2
φ3
( 3)
A1
Millimeters
Min.
Inches
Max.
1.2
0.15
1.05
0.30
3.1
0.00
0.80
0.19
2.9
Min.
4.30
0.45
0.026 BSC
0.252 BSC
4.50
0.75
0.169
0.018
1.0 REF
0.09
0.09
0.2
0°
Max.
0.047
0.006
0.041
0.012
0.122
0.000
0.031
0.007
0.114
0.65 BSC
6.40 BSC
0.177
0.030
0.039REF
0.004
0.004
0.008
0°
8°
12° REF
12° REF
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
1
(L1)
8°
12° REF
12° REF
7
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APM9988CO
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (T L)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6
minutes
max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
8
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APM9988CO
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s
3
3
Package Thickness
Volume mm
Volume mm
<350
≥350
<2.5 mm
240 +0/-5°C
225 +0/-5°C
≥2.5 mm
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0°C.
For example 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
D1
9
Ko
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APM9988CO
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
TSSOP-8
A
B
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
330 ± 1
2 + 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
F
D
D1
Po
P1
Ao
Bo
Ko
t
5.5 ± 0. 1
1.5 + 0.1
1.5 + 0.1
4.0 ± 0.1
2.0 ± 0.1
7.0 ± 0.1
3.6 ± 0.3
1.6 ± 0.1 0.3±0.013
(mm)
Cover Tape Dimensions
Application
TSSOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
10
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