APM2512N N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/40A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=13mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged TO-252 Package 1 2 3 G D S Top View of TO-252 D Applications • Power Management in Computer, Portable G Equipment and Battery Powered Systems. S N-Channel MOSFET Ordering and Marking Information APM2512N Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 C ° Handling Code TR : Tape & Reel L : Lead Free Code L : Lead Free Device Blank : Original Device Lead Free Code Handling Code Temp. Range Package Code APM2512N U : APM2512N XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 25 VGSS Gate-Source Voltage ±20 Unit V ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 1 www.anpec.com.tw APM2512N Absolute Maximum Ratings (Cont.) Symbol (TC= 25°C unless otherwise noted) Parameter Rating ID Maximum Drain Current – Continuous 40 IDM Maximum Pulsed Drain Current ( pulse width ≤ 300µs) 90 PD Maximum Power Dissipation TJ,TSTG Tc=25°C 50 Tc=100°C 20 Maximum Operating and Storage Junction Temperature Unit A W °C -55 to 150 * RθJA Thermal Resistance – Junction to Ambient 50 RθJC Thermal Resistance – Junction to Case 2.5 °C/W 2 * Mounted on 1in pad area of PCB. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition Min. APM2512N Typ. Max. Unit Static BV DSS Drain-Source Breakdown Voltage V GS =0V , IDS=250µA IDSS Zero Gate Voltage Drain Current V DS =20V , V GS=0V V GS(th) IGSS Gate Threshold Voltage Gate Leakage Current R DS(ON) V SD a a V DS =V GS , IDS=250µA V 25 1 1.5 1 µA 2 V ±100 nA Drain-Source On-state V GS =±20V , V DS=0V V GS =10V , IDS=20A 9 12 Resistance V GS =4.5V , IDS=10A 13 20 Diode Forward Voltage ISD =10A , VGS=0V 0.9 1.3 28 38 mΩ V b Dynamic Q g Total Gate Charge Q gs Q gd Gate-Source Charge Gate-Drain Charge td(ON) T r Turn-on Delay Time Turn-on Rise Time td(OFF) T f C iss C oss C rss Notes a b V DS =15V , IDS= 10A V GS =10V , nC 3.6 8.4 V DD =10V , IDS=10A , 10 15 20 25 Turn-off Delay Time Turn-off Fall Time V GEN =10V , R G=6Ω 35 50 15 20 Input Capacitance Output Capacitance V GS =0V 1560 345 245 V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz ns pF : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 2 www.anpec.com.tw APM2512N Typical Characteristics Output Characteristics Transfer Characteristics 40 40 VGS=5,6,7,8,9,10V VGS=4V 35 ID-Drain Current (A) ID-Drain Current (A) 35 30 25 VGS=3.5V 20 15 VGS=3V 10 5 0 1 2 3 4 5 25 20 15 o Tj=125 C 10 o 6 7 8 9 Tj=25 C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.8 0.022 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (Normalized) 0.024 IDS =250µA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 Tj=-55 C o 5 VGS=2.5V 0 30 0.020 0.018 0.016 VGS=4.5V 0.014 0.012 VGS=10V 0.010 0.008 0.006 0.004 -25 0 25 50 75 0.002 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 0 5 10 15 20 25 30 35 40 ID - Drain Current (A) 3 www.anpec.com.tw APM2512N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1.8 0.016 ID=20A 0.014 0.013 0.012 0.011 0.010 0.009 0.008 IDS = 20A 1.4 1.2 1.0 0.8 0.6 0.4 0.007 0.006 VGS = 10V 1.6 RDS(ON)-On-Resistance (Normalized) RDS(ON)-On-Resistance (Ω) 0.015 3 4 5 6 7 8 9 RON@Tj = 25°C: 9mΩ 0.2 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 50 75 Capacitance 10 3000 Frequency=1MHz VDS= 15 V IDS = 10A 2500 Capacitance (pF) 8 6 4 2 0 100 125 150 TJ - Junction Temperature (°C) Gate Charge VGS-Gate-Source Voltage (V) 25 2000 Ciss 1500 1000 Coss 500 0 5 10 15 20 25 0 30 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 Crss 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM2512N Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 40 700 2 Mounted on 1in pad o TA=25 C 500 o Power (W) IS-Source Current (A) 600 10 o Tj=150 C Tj=25 C 1 400 300 200 100 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1E-4 1.4 1E-3 VSD -Source-to-Drain Voltage (V) 0.01 0.1 1 10 100300 Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 PDM D=0.05 t D=0.02 D=0.01 1 t 0.01 2 1.Duty Cycle, D= t1/t2 o 2.Per Unit Base=RthJA=50 C/W SINGLE PULSE 3.TJM-TA=PDMZthJA 2 4.Surface Mounted on 1in pad 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 300 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 5 www.anpec.com.tw APM2512N Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 0. 0 20 6 www.anpec.com.tw APM2512N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM2512N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 P1 1.5± 0.25 4.0 ± 0.1 8 2.0 ± 0.1 Ao W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 Bo Ko t 2.5± 0.1 0.3±0.05 6.8 ± 0.1 10.4± 0.1 www.anpec.com.tw APM2512N Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2003 9 www.anpec.com.tw