BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SA1179 Pb Lead-free High breakdown voltage. APPLICATIONS z General purpose application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code M SOT-23 2SA1179 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTC093 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1179 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -55 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -1.0 V Transition frequency fT VCE=-6V, IC=-10mA Collector output capacitance Cob VCB=-6V,IE=0,f=1MHz B TYP MAX 200 UNIT 400 B B 180 MHz 4 pF PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm Document number: BL/SSSTC093 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1179 SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 2SA1179 SOT-23 3000/Tape&Reel Document number: BL/SSSTC093 Rev.A www.galaxycn.com 3