DATA SHEET 2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 2N3789 2N3791 60 60 SYMBOL VCBO VCEO VEBO IC IB PD 2N3790 2N3792 80 80 7.0 10 4.0 150 TJ,Tstg ΘJC UNITS V V V A A W -65 to +200 °C 1.17 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL ICEV ICEV IEBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) VBE(ON) hFE hFE hFE hFE fT TEST CONDITIONS VCE= Rated VCEO, VEB=1.5V VCE= Rated VCEO, VEB=1.5V, TC=150°C VEB=7.0V IC=200mA IC=4.0A, IB=400mA (2N3789, 2N3790) IC=5.0A, IB=500mA (2N3791, 2N3792) VCE=2.0V, IC=5.0A (2N3789, 2N3790) VCE=2.0V, IC=5.0A (2N3791, 2N3792) VCE=4.0V, IC=10A VCE=2.0V, IC=1.0A (2N3789, 2N3790) VCE=2.0V, IC=1.0A (2N3791, 2N3792) VCE=2.0V, IC=3.0A (2N3789, 2N3790) VCE=2.0V, IC=3.0A (2N3791, 2N3792) VCE=10V, IC=500mA, f=1.0MHz 2N3789 2N3791 MIN MAX 1.0 5.0 5.0 60 1.0 1.0 2.0 1.8 4.0 25 90 50 180 15 30 4.0 2N3790 2N3792 MIN MAX 1.0 5.0 5.0 80 1.0 1.0 2.0 1.8 4.0 25 90 50 180 15 30 4.0 UNITS mA mA mA V V V V V V MHz (SEE REVERSE SIDE) R1 2N3789 SERIES PNP POWER TRANSISTORS TO-3 PACKAGE - MECHANICAL OUTLINE A B E C F D G H J K 2 SYMBOL A B (DIA) C D E F G H J K L (DIA) M L M 1 R2 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 1.516 1.573 38.50 39.96 0.748 0.875 19.00 22.23 0.250 0.450 6.35 11.43 0.433 0.516 11.00 13.10 0.054 0.065 1.38 1.65 0.035 0.045 0.90 1.15 1.177 1.197 29.90 30.40 0.650 0.681 16.50 17.30 0.420 0.440 10.67 11.18 0.205 0.225 5.21 5.72 0.151 0.172 3.84 4.36 0.984 1.050 25.00 26.67 TO-3 (REV: R2)